MRAM history

Submitted by mram on Wed, 30/08/2006 - 12:22.

The early years

1989 - IBM scientists made a string of key discoveries about the "giant magnetoresistive" effect in thin-film structures.
2000 - IBM and Infineon established a joint MRAM development program.
2002 - NVE Announces Technology Exchange with Cypress Semiconductor.
2003 - A 128Kbit MRAM chip was introduced, manufactured win 0.18 technology.

2004

June - Infineon unveiled a 16-Mbit prototype based on 0.18 micron.
September - MRAM becomes a standard product in Freescale, which has began sampling MRAM.
October - Taiwan developers of MRAM to tape out 1Mbit parts at TSMC.
October - Micron drops MRAM, mulls other memories.
December - TSMC, NEC, Toshiba describe novel MRAM cells.
December - Renesas Technology Develops High-Speed, High-Reliability MRAM Technology.

2005

January - Cypress samples MRAM, uses NVE IP.
March - Cypress to Sell MRAM Subsidiary.
June - Honeywell posts 1-Mbit rad-hard MRAM data sheet.
August - MRAM record: memory cell runs at 2 GHz.
November - Renesas Technology and Grandis to Collaborate on Development of 65 nm MRAM Employing Spin Torque Transfer.

2006

February - Toshiba and NEC Develop World's Fastest, Highest Density MRAM.
June - Crocus raises 17M$ on potential of MRAM.
July - Freescale begins selling 4-Mbit MRAM.

2007

2008