Jan 26, 2017

Spin Transfer Technologies announced that it started to deliver fully functional ST-MRAM samples to customers in North America and Asia.

The sample devices are based on the company's Orthogonal Spin Transfer Magneto-Resistive Random Access Memory technology (OST-MRAM), and use 80nm perpendicular magnetic tunnel junctions (MTJs)., the latest generation of MRAM technology.

In September 2016 Spin Transfer Tech announced that it fabricated 20nm perpendicular MRAM magnetic tunnel junctions (MTJs) based on the company's Orthogonal Spin Transfer MRAM (OST-MRAM). In 2015 the company raised $70 million (in addition to $36 million raised in 2012). Back in October 2008 we interviewed Vincent Chun, who was then the executive in charge of the company.

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