MRAM News, Resources & Information

MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.

Crocus raised $21 million, has over 250 sensor customers, will break even in Q1 2016

Crocus logoCrocus Technology has secured $21 million in a new financing round. All of Crocus’ historical French and international investors participated in the round, including NanoDimension, Innovation Capital, IdInvest Partners, and Rusnano. Founded in 2004, Crocus has raised $194 million to date.

Crocus says that since it began producing MLU-based magnetic sensors in mid-2014, they have over 250 customers. The new capital will help Crocus to deploy its sensor product line in the key target markets: industrial, consumer electronics, automotive and solutions for IoT. Crocus will also strengthen its commercial resources (including finalizing a distribution network in Asia and reinforcing the support team) and develop develop new designs to enrich the product portfolio with integrated sensor and smart sensor applications. Crocus aims to reach breakeven in Q1 2016.

Koyo Electronics adopts Everspin's MRAM for their new Direct Logic PLC

Everspin announced that Koyo Electronics Industries adopted their MRAM chips in their new battery-free Direct Logic 205 (DL205) Series Programmable Logic Controllers (PLCs). The DL205 is Koyo's most configurable and versatile solution in their portfolio. Everspin's MRAM enables data integrity and reliability in harsh environments, and instant event save in the event of a power loss and without the need for a battery.

Koyo Electronics Industries Direct Logic PLC MRAM photo

The DL205 uses Everspin's 1-Megabit parallel interface (MR0A16A) MRAM chip.

Everspin appoints a new chief financial officer

Everspin Technologies announced it has appointed Jeff Winzeler as the company’s Chief Financial Officer (CFO). Winzeler joins Everspin from Avnera, a privately held semiconductor company specializing in analog and digital SoCs, and he served as CFO at several public companies.

STT-MRAM MTJ cells can be used to mimick the human brain's synapses

Researchers from France's Universite Paris-Sud and the CEA institute say that the probabilistic nature of STT-MRAM devices can be used to create synapses-like neuro system. This can be used to create efficient devices that mimic the human's brain method of operation.

STT-RAM cell synaptic like junction photo

MRAM cells (or MTJs) store data using electrons magnetic spin. The technology uses stochastic switching, and so to be sure that a bit is set, you have to applying a current in the MTJ for a long enough time (to increase the probability of the spin changes).

Keysight Technologies to launch an STT-MRAM test solution product developed in collaboration with Tohoku and the CIES

Keysight Technologies announced it will launch STT-MRAM test solution products, developed in collaboration with Tohoku University and the Center for Innovative Integrated Electronic System (CIES).

Keysight says that they aim to release the test solution in early 2016. This will address "various challenges in industry".

E2v launches a 32Mb stacked-package MRAM device

e2v announced a new stacked-package 32Mb MRAM device, the EV5A16B that includes two 16Mb MRAM chips (made by Everspin of course) in a 54-pins TSOP. The new device is available in commercial (0 to 70 degrees Celsius) and industrial (-40 to 85 degrees Celsius) temperature ranges. 

The EV5A16B offers SRAM-compatible, 35-ns read/write timing with data retention and endurance and targeted for microprocessors, DSP, storage systems, instruments, and FPGAs. The EV5A16B is available now.

Toshiba shows a new STT-MRAM test chip that consumes about 80% less power than SRAM memory

Toshiba presented a new STT-MRAM 1-Mb test chip that provides speed performance capable of 3.3-ns access to in-cache memory. The newly developed circuit consumes about 80% less power compared to a conventional SRAM as embedded memory - and Toshiba says that this makes it the best power-performing embedded memory.

Toshiba STT-MRAM test chip (Feb 2015)

To make this chip, Toshiba developed a new class of magnetic materials, that enabled them to build this low-power, high-efficiency, high-speed performance in energy-efficient magnetic tunnel junction (MTJ) memory.

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