MRAM-Info: the MRAM experts

MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies.

MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.

Recent MRAM News

Israeli researchers develop six-state magnetic memory elements

May 19, 2016

Researchers from Israel's Bar Ilan University and New York University designed a six-state magnetic element - which could be used to create a magnetic memory device with six-states - and thus a higher density than a the regular 2-state device.

Simulated six-state magneic memory

The researchers say that multi-level MRAM cells based on this design should not suffer from low writing speed and high power consumption - problems that are common in multi-level Flash memory cells.

Researchers develop a way to increase STT-MRAM density by placing MTJs directly on the via

May 17, 2016

Researchers from Japan's Tohoku University developed a technology to stack magnetic tunnel junctions (MTJs) directly on the the vertical interconnect access (via) without causing deterioration to its electric/magnetic characteristics. The researchers say that this technique can reduce the chip area of STT-MRAM.

Tohoku on-via STT-MRAM cell

The via in an integrated circuit design is a small opening that allows a conductive connection between the different layers of a semiconductor device. Placing the MTJ directly on the via holes has been avoided because it can degrade the MTJ's characteristics because the MTJ is very sensitive to the quality of the surface of its lower electrode.

Resistive RAM: next-gen storage memory technology

May 11, 2016

MRAM-Info has been focused on MRAM technologies for over 10 years, and the technology has advanced a lot since then, with over 60 million chips produced and growing densities. A new memory technology is now starting to enter the market as well - RRAM, or Resistive RAM, which is based on memristors, materials that change their resistance.

RRAM is promising storage-memory candidate, and we are happy to announce the launch of a new site dedicated to this technology, RRAM-Info.com. We will post daily news, commentary and updates about RRAM memory technologies. This is certainly a technology that all memory professionals should be aware of! You can subscribe to our weekly RRAM newsletter here - and if you have not done so already, be sure to also signup for our free MRAM newsletter!

Samsung will be ready with MRAM chips "soon"

Apr 21, 2016

Samsung logoSamsung's semiconductor chief Kim Ki-nam says that Samsung is developing next-generation memory technologies, such as MRAM and RRAM. According to Kim "Samsung will commercialize MRAMs and ReRAMs according to our own schedule. We are on our way and will be ready soon"

Samsung targets MRAM as an update to DRAM memory, while RRAM will be used as a storage memory to replace NAND.

Everspin starts sampling 256Mb ST-MRAM chips, plans 1Gb chips by the end of 2016

Apr 15, 2016

Everspin announced that it started shipping 256Mb ST-MRAM samples to customers. Everspin also plans to increase the density and sample 1Gb ST-MRAM chips later this year. The new chips demonstrate interface speeds comparable to DRAM, with DDR3 and DDR4 interfaces. Volume production is expected "soon".

Everspin EMD3D256 256Mb ST-MRAM photo

The new EMD3D256 chips are based on Everspin's proprietary perpendicular magnetic tunnel junction (pMTJ) spin torque technology - and the company expects the new technology to enable it to produce ST-MRAM in lower geometries - and higher densities beyond 1Gb in the future.

Researchers suggest and demonstrate a new scheme of spin-orbit-torque (SOT) induced magnetization switching

Mar 22, 2016

Researchers at Tohoku University developed a new scheme of spin-orbit-torque (SOT) induced magnetization switching. In the new scheme the magnetization directed collinear with the current.

Structures of spin orbit torque induced magnetization

The researcher fabricated three-terminal devices with the new structure (using a Ta/CoFeB/MgO-based magnetic tunnel junction) and successfully demonstrated the switching operation. The research report a "reasonably small" required current density to induce the magnetization switching and a "reasonably large" resistance difference between 0 and 1 states. They say that this is a promising candidate for future MRAM devices.