MRAM-Info: the MRAM experts

MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies.

MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.

Recent MRAM News

Nanomagnetic and Spintronic Devices for Energy-Efficient Memory and Computing

This book explores the recent and on-going research into spin-based devices and nanomagnetic-based technology while giving detailed background on state-of-the-art research. The book focuses on direct applications to devices that have potential to replace CMOS devices for computing applications such as memory, logic and higher order information processing.

Spin Transfer Technologies produced working 60-nm STT-MRAM prototypes

Feb 04, 2016

Spin Transfer Technologies (STT) has successfully produced a working prototype STT-MRAM device. The company's advanced prototyping magnetics processing line at its facility in Fremont, California, is now fully operational.

STT's prototypes incorporate proprietary, performance-enhancing ‘spin-filtering’ technology, and were fabricated on industry standard CMOS wafers sourced from a high volume Asian foundry supplier. The prototypes are based on 60-nm perpendicular magnetic tunnel junction devices

STT-MRAM maker Avalanche Technology raised $23 million

Feb 03, 2016

STT-MRAM developer Avalanche Technology logo Avalanche Technology raised $23 million from Thomvest Ventures, Vulcan Capital, Rogers Venture Partners, and VTB Capital. The company also has a substantial debt facility in place with Horizon Technology Finance.

Avalanche say that they are now bringing their Spin-Programmable STT-MRAM (SPMEM) discrete products to Tier-1 OEMS and licensing their embedded solutions (AvRAM) to strategic partners. The company previous financing round was announced in July 2012.

Crocus says it prevailed in their patent case against spin transfer technologies

Dec 03, 2015

Crocus logoSpin Transfer TechnologiesIn November 2013, Crocus Technology filed an Inter Partes Review petition to the US PTO, claiming that Spin Transfer Technologies's US patent #6,980,469 describes a technology already used in prior art, in particular in the patent portfolio of Crocus. In April 2014, the USPTO issued a preliminary decision in favor of Crocus' petition.

Crocus now says that it has prevailed in the Inter Partes Review of the patent. Crocus petitioned to cancel all or part of the patent as Crocus’s patent portfolio includes a patent on this technology that makes advanced non-volatile memory blocks more efficient. After careful consideration, the Patent Trial and Appeal Board of the US Patent and Trademark Office issued its final written decision cancelling or finding unpatentable all but three claims of the ’469 patent.

MRAM-Info gets a new responsive design

Nov 25, 2015

Today we launched MRAM-Info's new design. The changes are not dramatic, but we changed some of the menu system, made the site (hopefully) cleaner and more modern. Most importantly, this design is now mobile-friendly and should prove easier to read on smartphones.

MRAM-Info homepage responsive design 2015