MRAM News, Resources & Information
MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.
Everspin and Aupera unveiled the world's first all-MRAM storage module in the M.2 form factor. Aupera's AupM001 is an M.2 MRAM module that incorporates Evespin's 64Mbit EMD3D064M ST-MRAM chips and a PCIe backhaul interface to enable higher-performing flash array systems.
AupM001's initial capacity is 32 MB, with higher capacities coming soon. AupM001 is currently used in Aupera’s All Flash Array system for parity check and as a hardware accelerated engine for specific applications that require low latency and high performance.
Scientists at Rice University have created a solid-state memory technology based on graphene and tantalum oxide (a common insulator in electronics) that allows for high-density storage with a minimum occurrence of computer errors.
The new devices require only two electrodes per circuit, making them simpler than present-day flash memories that use three. The new design is also said to require 100 times less energy than present devices. It is a new way to make nonvolatile computer memories - memories that hold their data even when the power is off, unlike volatile random-access computer memories that lose their contents when the machine is shut down.
STT-MRAM developer Avalanche Technology announced that it began to sample STT-MRAM chips. Avalanche's proprietary perpendicular magnetic tunnel junction (pMTJ) cells are manufactured in a high volume, low cost, standard CMOS 300mm process.
Those first sample chips are 32Mbit and 64Mbit in size, and offer an industry-standard SPI interface built on a 55nm-node foundry process. Avalanche is also offering its STT-MRAM technology (which they brand as AvRAM) under license as embedded memory for integrated SOC designs.
Crocus Technology has secured $21 million in a new financing round. All of Crocus’ historical French and international investors participated in the round, including NanoDimension, Innovation Capital, IdInvest Partners, and Rusnano. Founded in 2004, Crocus has raised $194 million to date.
Crocus says that since it began producing MLU-based magnetic sensors in mid-2014, they have over 250 customers. The new capital will help Crocus to deploy its sensor product line in the key target markets: industrial, consumer electronics, automotive and solutions for IoT. Crocus will also strengthen its commercial resources (including finalizing a distribution network in Asia and reinforcing the support team) and develop develop new designs to enrich the product portfolio with integrated sensor and smart sensor applications. Crocus aims to reach breakeven in Q1 2016.
Everspin announced that Koyo Electronics Industries adopted their MRAM chips in their new battery-free Direct Logic 205 (DL205) Series Programmable Logic Controllers (PLCs). The DL205 is Koyo's most configurable and versatile solution in their portfolio. Everspin's MRAM enables data integrity and reliability in harsh environments, and instant event save in the event of a power loss and without the need for a battery.
The DL205 uses Everspin's 1-Megabit parallel interface (MR0A16A) MRAM chip.
Everspin Technologies announced it has appointed Jeff Winzeler as the company’s Chief Financial Officer (CFO). Winzeler joins Everspin from Avnera, a privately held semiconductor company specializing in analog and digital SoCs, and he served as CFO at several public companies.
Researchers from France's Universite Paris-Sud and the CEA institute say that the probabilistic nature of STT-MRAM devices can be used to create synapses-like neuro system. This can be used to create efficient devices that mimic the human's brain method of operation.
MRAM cells (or MTJs) store data using electrons magnetic spin. The technology uses stochastic switching, and so to be sure that a bit is set, you have to applying a current in the MTJ for a long enough time (to increase the probability of the spin changes).