MRAM News, Resources & Information
MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.
Researchers from France's Universite Paris-Sud and the CEA institute say that the probabilistic nature of STT-MRAM devices can be used to create synapses-like neuro system. This can be used to create efficient devices that mimic the human's brain method of operation.
MRAM cells (or MTJs) store data using electrons magnetic spin. The technology uses stochastic switching, and so to be sure that a bit is set, you have to applying a current in the MTJ for a long enough time (to increase the probability of the spin changes).
Keysight Technologies to launch an STT-MRAM test solution product developed in collaboration with Tohoku and the CIES
Keysight Technologies announced it will launch STT-MRAM test solution products, developed in collaboration with Tohoku University and the Center for Innovative Integrated Electronic System (CIES).
Keysight says that they aim to release the test solution in early 2016. This will address "various challenges in industry".
e2v announced a new stacked-package 32Mb MRAM device, the EV5A16B that includes two 16Mb MRAM chips (made by Everspin of course) in a 54-pins TSOP. The new device is available in commercial (0 to 70 degrees Celsius) and industrial (-40 to 85 degrees Celsius) temperature ranges.
The EV5A16B offers SRAM-compatible, 35-ns read/write timing with data retention and endurance and targeted for microprocessors, DSP, storage systems, instruments, and FPGAs. The EV5A16B is available now.
Toshiba presented a new STT-MRAM 1-Mb test chip that provides speed performance capable of 3.3-ns access to in-cache memory. The newly developed circuit consumes about 80% less power compared to a conventional SRAM as embedded memory - and Toshiba says that this makes it the best power-performing embedded memory.
To make this chip, Toshiba developed a new class of magnetic materials, that enabled them to build this low-power, high-efficiency, high-speed performance in energy-efficient magnetic tunnel junction (MTJ) memory.
Everspin announced that Elektron Music Machines flagship synthesizer uses the company's 16-Megabit MRAM memory. The stage Analog Keys synth features 37 semi-weighted keys, four analog voices, over 4000 sound slots, a powerful sequencer, and a digital control system.
Everspin says that the fast MRAM memory with its extreme data reliability is ideal for professional audio applications - as it enables fast applications and unlimited endurance. Everspin’s 16-Megabit MR4A16BMA35 MRAM is in full production today in a standard 48-ball BGA package and is designed to be used in a system like any standard 16-bit parallel memory with no software overhead.
Everspin announced a new MRAM-based Arduino shield evaluation board, designed for compatibility with any Arduino-derived host platform featuring a UNO expansion interface. The MR10Q010-EVAL uses Everspin's MR10Q010 1Mb Quad-SPI MRAM, with the STMicroelectronics ARM-based NUCLEO-F411RE.
This is the first MRAM-based Arduino shield, and it offers developers fast, non-volatile memory with virtually unlimited endurance and high data retention. Developers can order samples from Everspin's site.
Northwest Logic announced that its controller core has been validated with Everspin's EMD3D064M STT-MRAM chips. This interoperability is hardware proven on a Xilinx Virtex-7 FPGA platform and is now available for designs needing low-latency, high memory throughput using MRAM technology.
Everspin says that their ST-MRAM chips coupled with Northwest Logic's controller Core provides storage and memory system designers a new level of capability to have critical cache and in-flight data inherently protected.