MRAM News, Resources & Information
MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.
Everspin announced that Elektron Music Machines flagship synthesizer uses the company's 16-Megabit MRAM memory. The stage Analog Keys synth features 37 semi-weighted keys, four analog voices, over 4000 sound slots, a powerful sequencer, and a digital control system.
Everspin says that the fast MRAM memory with its extreme data reliability is ideal for professional audio applications - as it enables fast applications and unlimited endurance. Everspin’s 16-Megabit MR4A16BMA35 MRAM is in full production today in a standard 48-ball BGA package and is designed to be used in a system like any standard 16-bit parallel memory with no software overhead.
Everspin announced a new MRAM-based Arduino shield evaluation board, designed for compatibility with any Arduino-derived host platform featuring a UNO expansion interface. The MR10Q010-EVAL uses Everspin's MR10Q010 1Mb Quad-SPI MRAM, with the STMicroelectronics ARM-based NUCLEO-F411RE.
This is the first MRAM-based Arduino shield, and it offers developers fast, non-volatile memory with virtually unlimited endurance and high data retention. Developers can order samples from Everspin's site.
Northwest Logic announced that its controller core has been validated with Everspin's EMD3D064M STT-MRAM chips. This interoperability is hardware proven on a Xilinx Virtex-7 FPGA platform and is now available for designs needing low-latency, high memory throughput using MRAM technology.
Everspin says that their ST-MRAM chips coupled with Northwest Logic's controller Core provides storage and memory system designers a new level of capability to have critical cache and in-flight data inherently protected.
Yole Developpement released a new emerging-memory market report in which they try to asses the future of the memory market. Yose says that Phase-change memory (PCM) is pretty much dead, and the two main emerging memory technologies are MRAM and Resistive random Access Memory (ReRAM or RRAM).
While RRAM is very promising in the near future, with support from Micron (they plan to release RRAM chips in 2015) and Panasonic while other players are expected to react quickly. RRAM and STT-MRAM will compete in 2015-2016 in some standalone markets (such as embedded MCU, wearables and smart cards and the storage class memory for enterprise storage which will be the biggest market), and it's not clear yet which technology will be the most popular.
Everspin Technologies announced that it closed a $29 million funding round, led by Global Foundries and Western Digital Capital. Existing investors (New Venture Partners, Lux Capital, Sigma Partners, Epic Ventures, and Draper Fisher Jurvetson) also joined in the round.
In October 2014 Everspin entered into a partnership with GlobalFoundries to build fully processed 300mm wafers with Everspin's ST-MRAM technology. In October it was announced that GF acquired a stake in Everspin (this is probably before this recent investment) and also acquired ST-MRAM processing equipment (40-nm).
In October 2011, Micron and Singapore's A*STAR Data Storage Institute (DSI) announced a 3-year STT-MRAM co-development project. Today they announced that they extend this collaboration for three more years.
DSI and Micro are co-developing high-density STT-MRAM devices. Micron established a technology centre in Singapore, with help from the DSI, which also provided the necessary expertise and innovation to achieve successful fabrication of STT-MRAM devices. In the next three years, the research collaboration will focus on developing low-power consumption switching mechanisms, and improving the performance of STT-MRAM devices.
Written for scientists, researchers, and engineers, This book describes the recent research and implementations in relation to the design of a new generation of non-volatile electronic memories.
The objective is to replace existing memories (DRAM, SRAM, EEPROM, Flash, etc.) with a universal memory model likely to reach better performances than the current types of memory: extremely high commutation speeds, high implantation densities and retention time of information of about ten years.