This book explores the recent and on-going research into spin-based devices and nanomagnetic-based technology while giving detailed background on state-of-the-art research. The book focuses on direct applications to devices that have potential to replace CMOS devices for computing applications such as memory, logic and higher order information processing.
MRAM-Info: the MRAM experts
MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies.
MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.
Spin Transfer Technologies (STT) has successfully produced a working prototype STT-MRAM device. The company's advanced prototyping magnetics processing line at its facility in Fremont, California, is now fully operational.
STT's prototypes incorporate proprietary, performance-enhancing ‘spin-filtering’ technology, and were fabricated on industry standard CMOS wafers sourced from a high volume Asian foundry supplier. The prototypes are based on 60-nm perpendicular magnetic tunnel junction devices
STT-MRAM developer Avalanche Technology raised $23 million from Thomvest Ventures, Vulcan Capital, Rogers Venture Partners, and VTB Capital. The company also has a substantial debt facility in place with Horizon Technology Finance.
Avalanche say that they are now bringing their Spin-Programmable STT-MRAM (SPMEM) discrete products to Tier-1 OEMS and licensing their embedded solutions (AvRAM) to strategic partners. The company previous financing round was announced in July 2012.
Today we're happy to finally finish the re-design effort we started in November last year, and MRAM-Info now has a new logo and background, to complement the new responsive design. We like it a lot, we hope you do too! :-)
Here's for a happy 2016, one with exciting and positive MRAM news!
2015 is pretty much over - and this has been another year of slow growth for the MRAM industry. Here are the top 10 stories posted on MRAM-Info in 2015, ranked by popularity (i.e. how many people read the story):
- Toshiba shows a new STT-MRAM test chip that consumes about 80% less power than SRAM memory (Mar 7)
- Keysight Technologies to launch an STT-MRAM test solution product developed in collaboration with Tohoku and the CIES (Mar 17)
- E2v launches a 32Mb stacked-package MRAM device (Mar 12)
- STT-MRAM MTJ cells can be used to mimick the human brain's synapses (Apr 25)
- Everspin appoints a new chief financial officer (Apr 28)
- Yole sees STT-MRAM as the most suitable technology to start replacing DRAM in 2018 (Feb 8)
- Avalanche Technology starts to sample 32/64 Mbit STT-MRAM chips (Jul 3)
- Crocus raised $21 million, has over 250 sensor customers, will break even in Q1 2016 (Jun 19)
- Everspin raised $29 million from Global Foundries, Western Digital and others (Jan 26)
- Everspin announces an MRAM-based Arduino-shield evaluation module (Feb 25)
In November 2013, Crocus Technology filed an Inter Partes Review petition to the US PTO, claiming that Spin Transfer Technologies's US patent #6,980,469 describes a technology already used in prior art, in particular in the patent portfolio of Crocus. In April 2014, the USPTO issued a preliminary decision in favor of Crocus' petition.
Crocus now says that it has prevailed in the Inter Partes Review of the patent. Crocus petitioned to cancel all or part of the patent as Crocus’s patent portfolio includes a patent on this technology that makes advanced non-volatile memory blocks more efficient. After careful consideration, the Patent Trial and Appeal Board of the US Patent and Trademark Office issued its final written decision cancelling or finding unpatentable all but three claims of the ’469 patent.
Today we launched MRAM-Info's new design. The changes are not dramatic, but we changed some of the menu system, made the site (hopefully) cleaner and more modern. Most importantly, this design is now mobile-friendly and should prove easier to read on smartphones.