Today we launched MRAM-Info's new design. The changes are not dramatic, but we changed some of the menu system, made the site (hopefully) cleaner and more modern. Most importantly, this design is now mobile-friendly and should prove easier to read on smartphones.
MRAM-Info: the MRAM experts
MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies.
MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.
MRAM-Info takes great pride in inviting its readers to check out Perovskite-Info.com, our new site focused on perovskite developments, applications and market. We treat it with the same amount of care and deliberation as our other sites, to bring you only the best and most up-to-date picture of the happenings in the field.
Perovskites are a fascinating group of materials that share a similar structure and display a myriad of exciting properties like superconductivity, magnetoresistance and more. These easily synthesized materials are considered the future of solar cells, as their distinctive structure makes them perfect for enabling low-cost, efficient photovoltaics. They are also predicted to play a role in next-gen electric vehicle batteries, sensors, displays, lasers and much more.
A new report from Coughlin Associates says that in the near future we will see dramatic changes in the memory market as as fast non-volatile memories augment and eventually replace volatile memory.
Coughlin sees MRAM (and STT-MRAM) annual shipping capacity rising from 240TB in 2014 to between 15 and 35 PB in 2020. MRAM and STT-RAM revenues are expected to increase from about $300 million in 2014 to between $1.35 and $3.15 billion by 2020.
Artesyn Embedded Technologies announced a new high-performance VME single-board computer that comes with 512Kb of MRAM memory. The MVME8105 computer provides computing performance, data throughput and long life cycle support for a range of high-end industrial control, C4ISR and mission critical applications.
Integral Solutions International released a 5,000 Oe perpendicular magnet for WLA-3000, their wafer-level STT-MRAM analyzer. ISI says that this new magnet is optimally matched with its proprietary probe card interface to produce up to 5,000 Oe for the latest generation of STT-MRAM devices.
The new magnet increases maximum field while also improving z-field uniformity to +/- 0.25mm, while maintaining near zero remanence fields. It can also operate with 66% higher magnetic field duty cycle compared to the previous 3,000 Oe Perpendicular Magnet system.
Everspin and Aupera unveiled the world's first all-MRAM storage module in the M.2 form factor. Aupera's AupM001 is an M.2 MRAM module that incorporates Evespin's 64Mbit EMD3D064M ST-MRAM chips and a PCIe backhaul interface to enable higher-performing flash array systems.
AupM001's initial capacity is 32 MB, with higher capacities coming soon. AupM001 is currently used in Aupera’s All Flash Array system for parity check and as a hardware accelerated engine for specific applications that require low latency and high performance.
Scientists at Rice University have created a solid-state memory technology based on graphene and tantalum oxide (a common insulator in electronics) that allows for high-density storage with a minimum occurrence of computer errors.
The new devices require only two electrodes per circuit, making them simpler than present-day flash memories that use three. The new design is also said to require 100 times less energy than present devices. It is a new way to make nonvolatile computer memories - memories that hold their data even when the power is off, unlike volatile random-access computer memories that lose their contents when the machine is shut down.