MRAM-Info: the MRAM experts

MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies.

MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.

Recent MRAM News

New MRAM-Info LinkedIn page and group

Jun 18, 2016

We are happy to invite all our readers to follow the new MRAM-Info LinkedIn company page. LinkedIn is a great place to meet and find new professionals. If you follow the new company page, you will get MRAM updates directly to your feed, and also be able to connect to other MRAM professionals.

MRAM-Info linkedin page photo

In addition to the company page, we have also setup a new MRAM interest group - which will hopefully become a new forum for discussions and an exchange of knowledge, news and opinions. All focused on MRAM, of course. Join our new group now!

Feature our MRAM news in your site!

Jun 09, 2016

MRAM-Info has been providing objective and up-to-date MRAM market news, as well as in-depth articles and commentary for over 10 years. We are now happy to offer the opportunity to embed our MRAM news directly in your web site, at no cost.

If you're looking to enrich the experience of your web site visitors, our market news can grant them a glimpse into MRAM technology, news and market status.

For more information on how to embed our news, click here, or contact us and we'll be happy to support you. This is a simple, pain-free process!

Here's an example widget, showing how this can look in your site:

Israeli researchers develop six-state magnetic memory elements

May 19, 2016

Researchers from Israel's Bar Ilan University and New York University designed a six-state magnetic element - which could be used to create a magnetic memory device with six-states - and thus a higher density than a the regular 2-state device.

Simulated six-state magneic memory

The researchers say that multi-level MRAM cells based on this design should not suffer from low writing speed and high power consumption - problems that are common in multi-level Flash memory cells.

Researchers develop a way to increase STT-MRAM density by placing MTJs directly on the via

May 17, 2016

Researchers from Japan's Tohoku University developed a technology to stack magnetic tunnel junctions (MTJs) directly on the the vertical interconnect access (via) without causing deterioration to its electric/magnetic characteristics. The researchers say that this technique can reduce the chip area of STT-MRAM.

Tohoku on-via STT-MRAM cell

The via in an integrated circuit design is a small opening that allows a conductive connection between the different layers of a semiconductor device. Placing the MTJ directly on the via holes has been avoided because it can degrade the MTJ's characteristics because the MTJ is very sensitive to the quality of the surface of its lower electrode.

Resistive RAM: next-gen storage memory technology

May 11, 2016

MRAM-Info has been focused on MRAM technologies for over 10 years, and the technology has advanced a lot since then, with over 60 million chips produced and growing densities. A new memory technology is now starting to enter the market as well - RRAM, or Resistive RAM, which is based on memristors, materials that change their resistance.

RRAM is promising storage-memory candidate, and we are happy to announce the launch of a new site dedicated to this technology, RRAM-Info.com. We will post daily news, commentary and updates about RRAM memory technologies. This is certainly a technology that all memory professionals should be aware of! You can subscribe to our weekly RRAM newsletter here - and if you have not done so already, be sure to also signup for our free MRAM newsletter!

Samsung will be ready with MRAM chips "soon"

Apr 21, 2016

Samsung logoSamsung's semiconductor chief Kim Ki-nam says that Samsung is developing next-generation memory technologies, such as MRAM and RRAM. According to Kim "Samsung will commercialize MRAMs and ReRAMs according to our own schedule. We are on our way and will be ready soon"

Samsung targets MRAM as an update to DRAM memory, while RRAM will be used as a storage memory to replace NAND.