IBM is providing a preview of its new STT-MRAM technology. They have produced a 4-Kbit test device, using a magnetic tunnel junction (MTJ) with MgO tunnel barriers. They say that the new technology could enable a 64-Mbit MRAM (90nm). STT-RAM also uses less power than toggle MRAM. The STT-RAM is part of the joint-research with TDK, announced in 2007.
IBM shows new STT-MRAM tech with 20-fold increase in capacity, up to 64Mbit
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