Grandis today announced their 300-millimeter magnetic tunnel junction (MTJ) fabrication facility (Fab) in the US dedicated to STT-RAM. Grandis is now able to incorporate STT-RAM into its customers' most advanced semiconductor processes on 300mm wafers.

Grandis' MTJ Fab can now handle both 200mm and 300mm customer wafers. In a multi-million dollar investment, key equipment for depositing and annealing MTJ memory elements, the critical building blocks for STT-RAM, was purchased. Since Grandis' new licensees are often not familiar with fabricating MTJ elements and do not possess the associated fab equipment and know-how, the MTJ Fab's main purpose is enable licensees to incorporate Grandis' MTJ elements into their CMOS wafers at the earliest possible stage in the development cycle, thereby accelerating their STT-RAM development and reducing their time-to- market. The MTJ Fab also enables Grandis to conduct leading-edge R&D on new magnetic materials and MTJ elements targeted at further reducing STT-RAM write current and die size. As these new materials, structures and processes are proven, they are transferred immediately to licensees' production fabs.

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