Renesas claims to have already devised a 130-nm MRAM, which is a four-level-metal technology with a cell size of 0.81-micron2 and a standby current of zero.

But on its roadmap, the company will first commercialize an MRAM product, based on 90-nm technology that operates from 100-to-150-MHz. Slated for 2010, the device is geared for embedded memory applications in the company's core microcontroller market, said Katsuhiro Tsukamoto, president and chief operating officer at Renesas.

A 65-nm, 200-MHz MRAM is due out in 2012.

Read more here (EETimes)

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