Hynix

Last updated on Sun 15/09/2024 - 12:34
Company Type: 

SK Hynix Semiconductor is a global memory supplier producing a range of DRAM and flash memory chips. Hynix has an active MRAM research program, in collaboration with Grandis, Samsung and Toshiba.

Company Address

424, Teheran-ro,
Gangnam-gu
Seoul
South Korea

Kioxia and Hynix co-develop the world's smallest 1Selector-1MTJ cell, that can enable 64Gb MRAM chips

Kioxia Corporation (Toshiba's memory unit that was spun-off in 2021), in collaboration with SK Hynix, announced that it has developed the world's smallest 1Selector-1MTJ cell.

Kioxia says that the two companies have demonstrated a reliable 1 selector-1 MTJ (1S1M) cell read/write operation with low read disturb rate of <1E-6 in 64 Gb cross-point array architecture. They have implemented cross-point 1S1M chips integrated in Half Pitch (HP) of 20.5 nm and MTJ CD of 20 nm using As-doped SiO2 selector and perpendicularly magnetized MTJ (p-MTJ).

Read the full story Posted: Oct 22,2024

Toshiba and Hynix prototype a 4 Gb STT-MRAM

Toshiba and SK Hynix co-developed a 4-Gbit STT-MRAM chip, and presented a prototype at IEDM 2016.

Toshiba Hynix 4Gb STT-MRAM mTJ array photo

The prototype chip is made from eight 512-Mbit banks, and the cell area is equivalent to that of DRAM - at 9F2, which Hynix says is much smaller than conventional STT-MRAMs (50F2).

Read the full story Posted: Dec 20,2016

HP and Hynix to launch flash-replacement Memristor products in 2013

HP says that their two terminal memristor (Resistive RAM) technology will be launched in 18 months - and will "start to take market share from flash memory". The company has 'big plans' for the new memory technology and are working with Hynix to launch the flash replacement chip in 2013. The company also plans to go after the DRAM market in 2014/2015 and later the SRAM market as well.

HP has over 500 patents on this technology alone - but it isn't the only company working on memristor devices - in fact Samsung has an even bigger team working on a similar project.

Read the full story Posted: Oct 09,2011

Samsung acquires Grandis

Samsung announced that it has acquired Grandis, developer of STT-MRAM technology. We do not have any financial details yet, but Grandis' CEO Frahad Tabrizi said that this deal serves as a& "very successful exit" for Grandis's investors. Grandis raised $15 million since it was founded in 2002 (and also raised about the same from DARPA grants including a $8.6 million second-phase project granted in June 2010).

Grandis licensed their technology to several companies. We know that Hynix licensed it in 2008. The company was also collaborating with Renesas technologies. Hynix and Grandis were developing a compact in-plane MTJ based STT-RAM device that uses modified DRAM processes at 54nm.

Read the full story Posted: Aug 02,2011

Toshiba and Hynix to co-develop and produce MRAM products

Toshiba and Hynix announced an agreement to jointly develop MRAM products. Once the development is complete, the companies intend to establish an MRAM production plant together. We believe the companies intend to develop STT-MRAM technology.

Toshiba has been developing STT-MRAM for quite some time, and just a few days ago reported a breakthrough MTJ device that could pave the way towards Gigabit MRAM devices. They expect such chips within 3-4 years, so that's probably the same time frame on the new JV with Hynix.

Read the full story Posted: Jul 13,2011

IBM, Samsung and Hynix-Grandis report STT-MRAM research progress

During the International Electron Device Meeting (IEDM) exhibition we got some updates about STT-MRAM research done at IBM, Samsung and Hynix-Grandis (who are researching STT-MRAM together).

IBM is working together with TDK and has presented a new 4-kbit perpendicular STT-MRAM array using tunnel junctions. Samsung has presented an on-axis MRAM with a novel MTJ, which they say open he way towards sub-30nm scaling. Using ferromagnetic electrode and a different MTJ structure design, Samsung think that they can scale this to a sub-20nm level.

Read the full story Posted: Dec 08,2010

Hynix and Samsung to co-develop STT-RAM in a $40 million project

The Korean Government has decided to fund STT-RAM research for Hynix and Samsung in a $40 million project. The government will pay around half of the sum for the project, which is intended to run till 2014. The project calls for the government to work with Samsung and Hynix together for research and development on STT-MRAM chips. Korea aims to control around 45% of the 30-nano type memory chip market by 2015.

The companies have already opened a new laboratory at Hangyang University's fusion technology center. It is already equipped with a fully operational 300mm magnetic thin film deposition system and other chip-making facilities.

Read the full story Posted: Nov 26,2009