Renesas and Grandis have agreed to collaborate on the development of 65 nm process MRAM employing spin torque transfer writing technology. Renesas Technology will start to ship microcomputers and SoC products incorporating 65 nm process STT-RAM(TM) in the near future.
"We are currently doing development work on MRAM technology employing high-speed and highly reliable conventional magnetic field data writing technology. We intend to use this technology in products such as microcomputers and SoC devices with on-chip memory," said Tadashi Nishimura, Deputy Executive General Manager of the Production and Technology Unit at Renesas Technology Corp. "Nevertheless, in view of factors such as the need to reduce writing instability and lower current requirements, we feel that spin torque transfer is a more appropriate technology for future MRAM produced using ultra-fine processes. Grandis has world-class spin torque transfer technology. We are confident that by fusing their technology with our production processes we will be able to develop a universal memory that combines high performance and excellent reliability."