MRAM-Info: the MRAM experts

MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies.

MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.

Recent MRAM News

SOT-MRAM developer Antaios raises $11 million

SOT-MRAM developer Antaios raised $11 million from VCs and Applied Ventures, to accelerate its next-generation memory development and develop new strategic partnerships.

SOT-MRAM vs STT-MRAM bitcell

SOT-MRAM devices feature switching of the free magnetic layer done by injecting an in-plane current in an adjacent SOT layer, unlike STT-MRAM where the current is injected perpendicularly into the magnetic tunnel junction and the read and write operation is performed through the same path.

New four-state MTJ architecture may lead to multi-level MRAM

An international team of researchers led by Israel's Bar Ilan University have developed a new type of MTJ that has four resistance states. The researchers also demonstrated how it is possible to switch between these four different states using spin currents.

The four-state design uses a structure that is in the form of two crossing ellipses instead of one of the standard magnetic layers of the MTJ. Such a design could be used to create multi-level MRAM which stores data more densely compared to current MRAM memories which only have two states in each MTJ.

Spin Memory announces the Universal Selector, said to significantly improve existing and emerging memory technology capabilityies

Spin Memory (previously Spin Transfer Technologies) announced that it has developed a new innovative technology, called the Universal Selector, which will significantly improve the capabilities of existing and emerging memory technologies (including MRAM, DRAM and ReRAM) as it enables a novel way to design vertical cell transistors which achieves higher levels of performance, reliability and density.

MRAM by Spin Memory photo

Spin Memory’s Universal Selector is a selective, vertical epitaxial cell transistor whose channel has a low enough doping concentration that it operates in full depletion. For MRAM memory, the Universal Selector enables manufacturers to create 1T1R memory bitcells of 6F2 – 10F2 (6F2 – 10F2), enabling manufacturers to embed up to five times more memory in the same area footprint with minimal additional wafer processing costs.

Everspin reports its financial results for Q2 2020

Everspin Technologies reported its financial results for Q2 2020. Total revenues reached $11.8 million, up 37% from Q2 2019, and the GAAP net loss was $1.3 million (compared to a net loss of $3.7 million in Q2 2019). Cash and equivalents at the end of Q2 2020 were $12.9 million.

Everspin 1Gb STT-MRAM chip photo

Everspin says it has extended its momentum into the second quarter, with record revenues of its 1Gb STT-MRAM product. Looking into Q3, Everspin says it sees a delay in new product introduction plans by customers, and so sees its revenues between $10 million and $10.8 million.

Spin Memory raised $8.3 million as it extends its Series B Funding Round

Spin Memory logoSpin Memory (previously Spin Transfer Technologies) announced that it has raised $8.3 million in an extension to its Series B funding. The company's recent investors in the company participated in this round, out of which Allied Minds invested $4 million.

The new funding includes Arm, Applied Ventures (the VC arm of Applied Materials) and Abies Ventures. Spin Memory says that the additional funding will support the company's MRAM R&D.

ITRI transfers its 200 mm SOT-MRAM technology to chipmakers in Taiwan

Digitimes reports that Taiwan's Industrial Technology Research Institute (ITRI) has been developing spin-orbit torque MRAM (SOT-MRAM) for many years, and is now transferring this technology to local chipmakers in Taiwan.

According to Digitimes , ITRI has established a platform for its SOT-MRAM technology certification and trial runs on 8-inch wafers. The report does not detail which companies are licensing ITRI's technology.