MRAM-Info: the MRAM experts

MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies.

MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.

Recent MRAM News

Renesas developed new STT-MRAM circuit technology, achieves the world's fastest random access speed

Renesas Electronics announced that it has developed circuit technologies for embedded STT-MRAM that reduces the energy and voltage of the memory write operation. 

Renesas produced a 22-nm MCU test chip, that includes a 10.8 Mbit embedded MRAM memory cell array. It achieves a random read access frequency of over 200 MHz and a write throughput of 10.4-megabytes-per-second (MB/s).

Read the full story Posted: Feb 24,2024

PSMC collaborates with Power Spin for MRAM production by 2029

Reports in Japan suggest that Taiwan's Powerchip Semiconductor Manufacturing (PSMC) will enter into a new MRAM R&D project, together with Japan's Power Spin. PSMC plans to start producing MRAM chips by 2029, at its 12-inch factory that it is now building in Japan.

Power Spin, that holds MRAM IP originally developed at Tohoku University, will license its IP to PSMC and will assist in the required R&D and ramp-up of production at PSMC's fab. PSMC looks to utilize the MRAM technology mainly for generative AI data center solutions.

Read the full story Posted: Feb 07,2024

Tohoku University researchers develop a high performance X nm MTJ

Researchers from Japan's Tohoku University developed a method to produce X nm MTJs, using a CoFeB/MgO stack structure. The researchers report that the extremely small device achieves both high-retention and high-speed. This was enabled by controlling the shape and interfacial anisotropies individually by varying the thickness of each CoFeB layer and the quantity of [CoFeB/MgO] stacks.

The researcher further report that shape anisotropy-enhanced MTJs showed good retention (> 10 years) at 150 °C at single nanometer sizes, whereas interfacial anisotropy-enhanced MTJs exhibited rapid speed switching (10 ns or less) below 1 V.

Read the full story Posted: Jan 19,2024

ITRI and TSMC announce advances in SOT-MRAM development

In 2022, Taiwan's Industrial Technology Research Institute (ITRI) announced an agreement with Taiwan Semiconductor Manufacturing Company (TSMC) to collaborate on SOT-MRAM R&D. ITRI and TSMC now announced that they have developed SOT-MRAM array chips that boasts a power consumption of merely one percent of a comparable STT-MRAM device. 

ITRI and TSMC published a new research paper that was presented at the 2023 IEE International Electron Devices Meeting (IEDM 2023). ITRI explains that the new unit cell achieves simultaneous low power consumption and high-speed operation, reaching speeds as rapid as 10 nanoseconds. And its overall computing performance can be further enhanced when integrated with computing in memory circuit design. 

Read the full story Posted: Jan 18,2024

Netsol Unveils First Standalone MRAM Using 28nm Process, Shares the Outlook for Standalone MRAM at 2023 MRAM Forum

At the 2023 MRAM Forum, a key event by the IEEE Magnetics Society tied to the IEDM conference, Mr. Noh, Chief Technology Officer at Netsol, provided an overview of the company's advancements in MRAM technology.

Mr. Noh introduced Netsol's development of its first standalone MRAM, created using 28nm eMRAM technology from Samsung Foundry. He presented the technical characteristics of the product, focusing on its data retention, endurance,  resistance to magnetic interference and quality, which have been validated through extensive testing.

Read the full story Posted: Jan 10,2024

Everspin reports its financial results for Q3 2023, launches a new MRAM for distributed Edge AI project

Everspin Technologies reported its financial results for Q3 2023, with revenues of $16.5 million (up 8% from Q3 2022) and a net income of $2.4 million. The company generated $3.6 million and its current cash balance is $34.9 million.Everspin Technologies chip photo

Everspin is cautiously optimistic about the next quarter, expecting revenue to be in the range of $15.4 to $16.4 million. It says demand for its toggle products remain strong and it sees increased demand for its xSPI family of STT-MRAM products.

Read the full story Posted: Nov 02,2023

Green Mountain Semiconductor wins a grant from NASA to develop an MRAM-enhanced neuromorphic AI processor for space applications

US-based design house and services provider Green Mountain Semiconductor (GMS) has won a Phase I Small Business Innovation Research (SBIR) contract from NASA, to develop a neuromorphic AI processor for space applications using MRAM magnetic memory.

GMS's approach involves the development of an analysis tool to optimize circuit designs for reliability and radiation resistance. This advancement will enable the use of off-the-shelf technology in space applications without the need for excessive design modifications to ensure radiation resistance.

Read the full story Posted: Oct 27,2023

Everspin expands its EMxxLX xSPI STT-MRAM product family

In 2022, Everspin Technologies announced the EMxxLX xSPI serial interface series, the industry’s first xSPI serial interface persistent memory. Later in 2022 the EMxxLX devices started to ship commercially.

Everspin chip render

The EMxxLX family offered an octal interface with 400MB/s bandwidth, compatibility with the xSPI standard and 1000X faster write times compared to NOR flash. The EMxxLX devices were available with density from 8Mb to 64Mb, and Everspin now announced that it is expanding its product offering, adding a 4Mb option and also new, smaller packaging for the 4-to-16-megabit products. 

Read the full story Posted: Oct 18,2023

RAiTEK adopts Avalanche's space-grade MRAM for its satellite-based storage systems

pMTJ STT-MRAM developer Avalanche Technology announced that it is providing its Space Grade Persistent SRAM (P-SRAM) STT-MRAM products for satellite-based storage systems developed by RAiTEK. 

Avalanche Technology MRAM chips render

RAiTEK has designed in a 16Mb device from Avalanche's Gen 2 Space Grade family to monitor data stream status, and a 1Gb Gen 3 Space Grade to support large configuration images for the onboard FPGA used in the drives, as part of their growing portfolio of data storage and processing solutions for the space industry.

Read the full story Posted: Sep 12,2023