MRAM-Info: the MRAM experts

MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies.

MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.

Recent MRAM News

Hprobe releases a new MRAM testing module to help increase production yields

Hprobe, a developer of testing equipment for magnetic devices, announced a new addition to its product line, the RF Pulse Module. The company says that this is the first commercially available testing system to both collect statistics of error rate of the memory unit cell and take a deep look into switching dynamics of resistive memories.

Hprobe IBEX WAT H3DM Light photo

Hprobe's IBEX system

Hprobe says that the RF Pulse Module is two orders of magnitude faster than existing devices and can help increase manufacturing yields. Hprobe has already begun shipping to tier-1 companies and major research institutes around the world.

Read the full story Posted: Dec 03,2022

Hprobe releases a new MRAM testing module to help increase production yields

Hprobe, a developer of testing equipment for magnetic devices, announced a new addition to its product line, the RF Pulse Module. The company says that this is the commercially available testing system to both collect statistics of error rate of the memory unit cell and take a deep look into switching dynamics of resistive memories.

Hprobe IBEX WAT H3DM Light photo

Hprobe's IBEX system

Hprobe says that the RF Pulse Module is two orders of magnitude faster than existing devices and can help increase manufacturing yields. Hprobe has already begun shipping to tier-1 companies and major research institutes around the world.

Read the full story Posted: Dec 03,2022

Bugatti selects Everspin's 256Kb MRAM for its upcoming all-electric supercar

Everspin Technologies announced that Rimac Technology, designer of cars for its sister company Bugatti-Rimac, has selected Everspin's 256Kb MRAM for use in the upcoming innovative all-electric Nevara supercar.

Everspin Technologies chip photoThe MR25H256AMDF 256Kb MRAM device, according to Everspin, is well suited for automotive applications and is qualified to the AEC-Q100 Grade 1 standard for use in demanding memory applications that require extreme reliability in critical data capturing systems.

Disclosure: the author of this post holds share in Everspin

Read the full story Posted: Nov 30,2022

Everspin to build a new MRAM production line in Indiana, hopes to secuire government support

Earlier this year, Everspin Technologies announced that it aims to build a new production line in the state of Indiana, US, that will increase Everspin's production capacity for both Toggle MRAM and STT-MRAM. The company is working with state and federal government sources to secure funding for the new production line.

Everspin chip render

Everspin says it also plans to work with the local research community to enhance domestic research for MRAM technology development, creating a Technology Development Center at the proposed Indiana-based location. Everspin says that it is the only US-based commercial manufacturer of MRAM devices today, and increasing its capacity in the US is of strategic importance to its commercial and US Government partners.

Read the full story Posted: Nov 22,2022

Researchers develop sub-volt nanoscale perpendicular VC-MRAM devices

A research team from Northwestern Engineering, led by Prof. Pedram Khalili developed highly efficiency nanoscale perpendicular MRAM (pMTJ) devices that use sub-volt switching. The researcher say that this new technology can allow scaling MRAM to very high densities.

The new devices are referred to as voltage-controlled MRAM (VCM), that does not rely on current like regular MRAM devices. Most VCM devices need high switching voltage (at least 2 volts), but by using a new material structure with significantly higher sensitivity of the magnetic properties to voltage, the researchers were able to operate at less than one volt.

Read the full story Posted: Nov 14,2022

Avalanche to start producing some of its MRAM chips at LA Semiconductor's US-based fab

pMTJ STT-MRAM developer Avalanche Technology announced plans to start producing some of its MRAM devices at LA Semiconductor, a US-based mixed-signal foundry at Pocatello ID (a former onsemi site) with its 180 nm mixed signal and power process capabilities.

Avalanche Technology says that by moving its production  to the US, it shows its commitment to the local aerospace and defense community with an assured source of domestic manufacturing.

Read the full story Posted: Nov 11,2022

Everspin reported its financial results for Q3 2022

Everspin Technologies announced reported its financial results for Q3 2022, with revenues of $15.2 million (close to the end of its guidance, and up 3% from last year) and a net income of $1.9 million.

Everspin Technologies chip photo

Everspin says that its product backlog remains strong, but customer inventory adjustments will have an impact on the backlog in coming quarters. The company continues to relieve its supply chain constraints, which is helping to address its unfulfilled toggle MRAM demand.

Read the full story Posted: Nov 10,2022

Everspin's latest EMxxLX STT-MRAM devices are commercially available

Earlier this year, Everspin Technologies announced its latest STT-MRAM devices, the EMxxLX xSPI serial interface memory. The company now announced that the EMxxLX devices are now commercially available.

The EMxxLX family is the only memory device offering density up to 64Mb, octal interface with 400MB/s bandwidth, and compatibility with the xSPI standard. The EMxxLX features 1000X faster write times compared to NOR flash.

Disclosure: the author of this post holds shares at Everspin

Read the full story Posted: Nov 02,2022

Samsung researchers update on the company's 14 nm eMRAM project

Researchers from Samsung will soon present at IEDM 2022 a new research paper that will discuss the company's latest achievements in scaling down its MRAM technology to the company's 14nm FinFET logic process.

Samsung eMRAM image

The Samsung researchers produced a stand-alone memory with a write energy requirement of 25 pJ per bit and active power requirements of 14 mW for reading and 27 mW for writing at a 54Mbyte per second data rate. The cycling  is 10^14 cycles and when scaled to a 16Mbit device, a chip would occupy 30 square millimeters.

Read the full story Posted: Oct 26,2022

Everspin to provide MRAM IP and manufacturing services to QuickLogic Corporation

Everspin Technologies announced that it has signed a contract to provide MRAM technology, design, and back end of line manufacturing services to QuickLogic Corporation. At the first stage, Everspin will develop and demonstrate Strategic Radiation Hardened (SRH), high reliability Field Programmable Gate Array (FPGA) technology to support identified and future Department of Defense (DoD) strategic and space system requirements.

Everspin Technologies chip photo

Everspin says that the initial contract is potentially valued at $2.8 million, with subsequent options bringing the total to approximately $8.7 million. The project is sponsored by DoD’s Trusted and Assured Microelectronics (T&AM) Program.

Read the full story Posted: Oct 20,2022