MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies.
MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.
Everspin Technologies announced that Lucid Motors has designed-in the company's 256 Kb MRAM into its master powertrain system for its Lucid Air all-electric luxury sedan.
Everspin's The MR25H256AMDF MRAM device is designed for automotive applications and is qualified to the AEC-Q100 Grade 1 standard for use in demanding memory applications that require extreme reliability in critical data capturing systems.
pMTJ STT-MRAM developer Avalanche Technology announced its third-generation 1Gb space-grade parallel asynchronous x32-interface high-reliability P-SRAM (Persistent SRAM) memory devices. The company says that these new devices enable customers to design unified memory architecture systems for high reliability aerospace applications, in extremely small form factors.
Avalanche's 2nd-Gen P-SRAM evaluation kit
The new Parallel x32 Space Grade series is offered in 512Mb, 1Gb, 2Gb and 4Gb density options and has asynchronous SRAM compatible 45ns/45ns read/write timings. Data is always non-volatile with >10^14 write cycles endurance and 10-year retention at 125°C. All four density options are available in a small footprint 142-Ball FBGA (17mm x 11mm) package.
Everspin Technologies announced its financial results for Q1 2021. Revenues in the quarter increased 1.7% from last year to $10.3 million. The net loss in the quarter was $0.5 million, and the company reported a positive cash flow (of $1.6 million) for the third consecutive quarter.
Everspin estimates that its Q2 2021 revenues will be in the range of $11 million to $12 million.
During a presentation during Persistent Memory Summit, a new slide from TSMC was shown that describes the company's eMRAM roadmap:
As we already know, TSMC is offering 22nm eMRAM option as an eFlash alternative. The company is also looking to develop 14/12 nm eMRAM option to replace SRAM memory (this is interesting as before it was revealed that the company is developing 16nm MRAM). Finally eMRAM is touted as a possible replacement for configuration memory (eFUSE / OTP / Flash).
pMTJ STT-MRAM developer Avalanche Technology announced that it is now shipping new space-grade parallel asynchronous x16-interface high-reliability P-SRAM (Persistent SRAM) memory devices, based on its latest STT-MRAM technology.
Avalanche says that its STT-MRAM devices are smaller and more efficienct compared to Toggle MRAM based products, currently adopted in aerospace applications. The Parallel x16 Space Grade series is offered in 16Mb, 32Mb and 64Mb density options and has asynchronous SRAM compatible 45ns/45ns read/write timings. All three density options currently in production and available within industry standard lead times.
Hprobe, a developer of testing equipment for magnetic devices, announced a 'significant' order for a wafer-level magnetic tester (the company's IBEX tester) from a tier-1 semiconductor manufacturer.
The equipment will be used for research and development of magnetic materials and devices, which represents a very promising technology for MRAM chips and magnetic sensors. The IBEX platform is compatible with 200mm and 300mm automated wafer probers, and is dedicated to testing MRAM magnetic tunnel junctions, bit cells based on STT-MRAM, SOT-MRAM, and Voltage Controlled (VC-MRAM) technologies.
Integral Solutions International (ISI) announced its first shipment of a commercial SOT-MRAM tester system. This new equipment was developed by integrating a commercial pulser with ISI’s proprietary bias-tee and measurement electronics.
ISI says that the new tester system generates pulses as narrow as 300pS, suitable for R&D applications which require extremely narrow pulse widths. In parallel, ISI is also developing its proprietary Gen-4 Pulser System, which will provide high-throughput and cost-effective measurement solutions with the flexibility of testing either STT-MRAM or SOT-MRAM devices. The Gen-4 system is expected to be released in the fall of 2021.