Everspin Technologies announced a strategic partnership with Teledyne HiRel Semiconductors, a supplier of high-reliability semiconductor solutions, to accelerate adoption of Everspin’s MRAM in aerospace, defense and other demanding systems.

Teledyne HiRel will initially offer Everspin’s 256Mb PERSYST STT-MRAM as part of its memory products portfolio for military and aerospace customers, with target applications including avionics, VPX and single-board computer platforms, radar and electronic warfare payloads, satellite electronics, autonomous systems and other next-generation electronic solutions. 

Researchers from the University of Texas at Austin, together with TSMC, have produced 300 mm-compatible SOT-MRAM devices and have shown SOT-MRAM is uniquely effective candidate for implementation of crossbar accelerators in memory- and energy-limited applications such as AI.

The SOT-MRAM devices offer 150% tunnel magnetoresistance (TMR) ratio, fast (2 ns) and low voltage (<1 V) operation, low energy dissipation (2 pJ), low write noise (0.1%), and low device-to-device variation of 10%. 

Researchers from Beihang University, Aix-Marseille University and Université Paris-Saclay, in collaboration with Truth Memory Corporation, demonstrated a highly efficient orbital torque-driven magnetic tunnel junction (MTJ).

The researchers say that in standard SOT-MRAM devices, the β-phase tungsten (β-W) write electrodes suffer from high electrical resistance and strict thickness limitations. To overcome both issues, the researchers harnessed the hidden degree of freedom, the orbital angular momentum. 

Everspin Technologies reported its preliminary unaudited financial results for Q2 2026, with record revenues of $18.7 million (up 42% from $13.2 million last year), $15.3 million in MRAM product sales (up from $11.1 million last year). GAAP net loss was $3.6 million, while non-GAAP net income was $2.9 million. 

At the end of the quarter, Everspin had $43.9 million in cash and equivalents, and the company expects next quarter revenues in a range of $19.5 million to $20.5 million.

Everspin Technologies announced that it has signed a memorandum of understanding (MOU) with MaxLinear, Inc., a provider of high-performance connectivity and storage acceleration solutions, to evaluate next-generation memory architectures designed to improve efficiency and performance in AI servers.

Everspin says that as AI models and inference workloads continue to grow, increased demands are driving interest in new approaches that combine persistent memory, acceleration and compression to improve performance, power efficiency and infrastructure utilization.

Everspin Technologies announced that its 64Mb PERSYST STT-MRAM was chosen by Astro Digital, for an upcoming Raven bus geosynchronous Earth orbit (GEO) satellite mission.

Astro Digital will use Everspin’s EM064LXAQDG13IS1T 64Mb STT-MRAM as the primary fail-safe memory for the system boot process on its Raven bus. The company explains that in satellite systems, boot memory stores the essential code needed to initialize spacecraft electronics and support system recovery. For this application, persistent MRAM provides non-volatile memory that can retain critical boot information without power and provide fast access during startup or recovery.

The semiconductor memory market is once facing drastic shortages, mainly due to a surge in AI demand, that is pulling capacity toward HBM, DRAM and NAND solutions. Device makers see lead times increase and prices increased sharply. To understand what is really happening in the market and where MRAM fits into the picture, we spoke with Sean Dougherty of Everspin Technologies.

Sean Dougherty is vice president of sales at Everspin Technologies, where he leads global revenue-generating activities across product sales, foundry services and strategic partnerships. He oversees Everspin’s worldwide sales and application engineering teams, helping customers design next-generation MRAM devices into demanding commercial, industrial, aerospace and other high-reliability applications.

Q: We’re seeing a lot of focus on memory shortages again, especially tied to AI demand. From your perspective, what’s actually happening in the market right now?

What we’re seeing today is different from the last supply crisis. During that period, many were suddenly line-down on many semiconductor products at the same time.

GlobalFoundries reported its Q1 2026 financial results, with $1.63 billion in revenues, and a net profit of $227 million. The company reported its design wins increased 50% over Q1 2025 - including automotive MRAM (and microLED) wins.

GF says that it is seeing strong momentum for auto-grade embedded MRAM capability on FDX, describing "industry-leading 100 MHz class access times" and endurance and reliability. The company reported that lead customers have taped out with the MRAM feature and cited growing engagement with tier-one suppliers including Bosch as it moves toward production.

Custom AI ASIC solutions provider SEMIFIVE, together with China-based AI semiconductor developer ICY Tech, announced the successful tape-out of its next-generation Edge AI SoC jointly developed utilizing Samsung Foundry's 8nm (8LPU) embedded MRAM technology. The two companies say that this is a significant milestone toward the first commercial deployment of 8nm eMRAM technology in Asia.

SEMIFIVE that by integrating eMRAM into its Edge AI accelerator, it aims to reinforce its technical leadership in the ultra-low-power, high-performance inference market. 

Everspin Technologies has entered into a $40 million 30-months defense subcontract agreement with Amentum Services Inc. to support the U.S. government’s Microelectronics Research, Development, Test, and Evaluation (RDT&E) program. 

Everspin updates that the contract aims to establish proven processes and manufacturing capabilities for new Toggle MRAM. Under the agreement, Everspin will manage the program and develop on-shore Toggle MRAM production capability.