MRAM-Info: the MRAM experts

MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies.

MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.

Recent MRAM News

Everspin shows how its new nvNITRO accelerators provide superior latency determinism

In March 2017 Everspin announced its nvNITRO line of storage accelerators, with 1GB and 2GB capacities, based on the company's 256Mb DDR3 ST-MRAM chips. Everspin is accepting orders for these accelerators which should start shipping by the end of the year.

In the video above you can see a recent demonstration by Everspin of how these nvNITRO accelerators provide superior latency determinism enabling a Low Latency Write Buffer for applications such as Apache Log4J.

Everspin reports its financial results for Q3 2017, focuses on 256Mb STT-MRAM

Everspin reports its financial results for Q3 2017. Revenues reached a record $9 million (up from $7.2 million in Q3 2016 and up only slightly from last quarter), while the net loss grew to $5.4 million (up from $1.4 million in Q3 2016).

Everspin  Q3 2017 earnings slide

At the end of the quarter, Everspin had $17.8 million in cash and equivalents (down from $21.2 million at the end of Q2 2017). Everspin expects revenue in Q4 2017 to be in the range of $9.9 million to $10.3 million.

Keysight Technology announces a new MRAM test platform designed in collaboration with Tohoku University

Tohoku University's Center for Innovative Integrated Electronic System (CIES) announced that its collaboration with Keysight Technology has led to the release of a new MRAM test platform product, the NX5730A.

Kesight NX5730A Memory Test system photo

Keysight's NX5730A is a high-throughput 1 ns Pulsed IV memory test solution. Keysight says that this solution is a unique dedicated system for characterizing emerging devices such as magnetic tunnel junction (MTJ) on silicon wafers, accelerating the efficiency of device characterization and memory production testing.

A new method to control magnetism could lead to ultra-fast and more efficient MRAM chips

Researchers from UC Berkeley and UC Riverside developed a new ultra-fast method for electrically controlling magnetism in certain metals. The researchers say that this could be applied to future MRAM chips, to provide much faster write speeds and more efficient operation.

Ultrafast electrical magnetic switching (UCB + UCR)

The researchers built special circuits to study how magnetic metals respond to electrical pulses as short as a few picoseconds. The researchers found that in a magnetic alloy made up of gadolinium and iron, these fast electrical pulses can switch the direction of the magnetism in less than 10 picoseconds, orders of magnitude faster than any other MRAM technology.

Veeco: high volume manufacturing using our Ion Beam Etch systems to begin in 2018

Veeco developed an Ion Beam Etch system for MRAM production, and during the company's Q3 2017 conference call it updated on the new system.

Veeco MRAM IBE slide, Q3-2017

Veeco says that its Ion Beam technology is well suited for etching the multilayer magnetic stack used in MRAM chips. Veeco already placed systems at multiple customers and expect high volume manufacturing to start next year for embedded memory applications.

Spin Transfer Technologies and Tokyo Electron to co-develop next-gen STT-MRAM devices

Spin Transfer Technologies (STT) announced that it has signed an agreement with Tokyo Electron (TEL) to collaborate on the development of next-generation SRAM and DRAM-class STT-MRAM devices.

Spin Transfer Technologies says that the combination of its STT-MRAM technology with TEL’s advanced PVD MRAM deposition tool will allow the companies to quickly develop processes for the highest density and endurance devices.