The MRAM industry is growing, as adoption of MRAM memory solutions is on the rise, and new technologies are being developed to increase capacity and performance. Here are some recent and popular news that you may find of interest:

• GlobalFoundries now offers Auto Grade 1 ready eMRAM technology on its FDX platform
• Everspin introduces a new MRAM code and data unified memory for embedded systems
• Avalanche develops a 22 nn process node, as it aims to increase its MRAM memory density by 16X
• Avalanche filed a lawsuit against Everspin, saying it infringes upon 4 of its MRAM patents
• Truth Memory Corporation developed the world's first 8Mb SOT-MRAM 110 nm chip
• Researchers develop the most advanced MRAM free layer to date
• Researchers from Intel and Georgia Tech design a 7 nm SOT-MRAM device
• Renesas introduces the new RA8M2 and RA8D2 MCUs with 1Mb embedded MRAM
• Researchers from TSMC, ITRI, Stanford and YMCT developed a 64-kilobit SOT-MRAM
• TSMC to develop 5 nm MRAM technology in Europe, targeting automotive AI applications
• Researchers demonstrate the world's lowest write power SOT-MRAM device
• Vertical Compute raises 20 million Euro to develop MRAM-based solutions for AI
• Samsung details its eMRAM roadmap with 5 nm expected by 2027
• MRAM-based memory architecture could accelerate AI by a factor of 1000
• Leading the Charge in MRAM: An Interview with Everspin's CEO
• Kioxia and Hynix co-develop the world's smallest 1Selector-1MTJ cell
• IBM's next-gen FlashCore modules to feature Everspin's 1 Gbg STT-MRAM

GlobalFoundries announced the availability of Auto Grade 1 ready embedded MRAM (eMRAM) technology on the company’s ultra-low power FDX platform. GF says that this is a key enhancement to its portfolio of non-volatile memory technologies and AutoPro platform of automotive-ready solutions.

The new FDX+AutoPro150 eMRAM technology delivers essential advantages over competitive industry grade memories, including proven endurance up to 500k cycles, sub-10 nanosecond read speed, and superior scalability for larger memory density. The technology is designed to address known magnetic field effects and qualified for reliable operation in harsh environments up to 150°C, enabling high-performance, system-on-chip (SoC) solutions that meet the demands of critical automotive applications.

Everspin Technologies launched a new family of unified code and data memory devices, branded as UNISYST MRAM. The new technology and platform targets high-density, non-volatile architecture for edge AI, industrial and mission-critical designs

Everspin's president and CEO, Sanjeev Aggarwal, says that sSystem designers are running into the physical and performance limits of NOR flash, especially as process nodes move below 40 nanometers and workloads become more demanding. With UNISYST, Everspin is extending its MRAM roadmap to higher densities while giving customers a practical way to start with PERSYST today and migrate to a code-and-data MRAM architecture as soon as it is available.

Everspin Technologies is expanding its high-reliability (HR) PERSYST xSPI STT-MRAM portfolio, adding a new 256Mb density product. The company also announced that it has completed full production qualification for its 64Mb MRAM product, which has now completed full production qualification for the AEC-Q100 Grade 1 specification. 

Everspin's HR xSPI 64Mb STT-MRAM It is currently available for customer orders and supports high-volume production programs, with inventory available through Everspin’s authorized distributors worldwide.

Everspin Technologies announced its financial results for Q4 2025, with a 12% increase in revenues to $14.8 million, and a net income of $2.6 million. Everspin says that its strong Q4 performance reflects the growing demand for its MRAM solutions across various sectors, especially in data centers, energy managements, aerospace and industrial automation.

Everspin ended the quarter with cash and cash equivalents of $44.5 million, down $0.8 million from $45.3 million at the end of Q3 2025.

Avalanche Technology announced that has achieved the phase-one milestone of its magnetic cell scaling project, as it aims to be able to produce higher-density space-grade MRAM. This cell size reduction, in concert with additional planned geometry shrink, will enable the increase in memory density by 16X.

Avalanche has successfully established high density MTJ array manufacturing in a high volume production environment at 22 nm process node, achieving an MTJ critical dimension (CD) of 40 nm with a pitch of 100nm and below. Avalanche says that through rigorous optimization of MTJ hard mask and etch processes, the dense array delivers low bit error rates, enabling a minimum cell size of 0.01 μm² and high yield, gigabit class monolithic chip production, with demonstrated scalability to 12 nm process nodes.

pMTJ STT-MRAM developer Avalanche Technology announced that Aitech has chosen the company's space-grade MRAM technology for its unmanned rovers and deep space autonomous exploration platforms.

These platforms, designed for harsh environments where system failure is not an option, are designed to offer unparalleled radiation immunity, survivability, adaptability and the highest-reliability performance.

Avalanche Technology is introducing its next-generation VNX+ storage module, that is designed specifically for military and Low Earth Orbit (LEO) environments.

Avalanche says that its new solution delivers unparalleled radiation immunity, survivability in congested electromagnetic environments, and highest-reliability performance, based on the company's Space Grade MRAM.

On January 28, Avalanche Technology filed a lawsuit in the United States District Court for the District of Delaware, against Everspin Technologies saying that Everspin's STT-MRAM technology infringes upon Avalanche's patents.

Avalanche says that there are 4 patents that Everspin infringes upon : U.S. Patents 9,318,179, 9,419,210, 11,678,586, and 10,490,737.  The Lawsuit requests customary remedies for patent infringement and the ITC Complaint requests that the U.S. ITC  Investigation commence an investigation.

China-based MRAM developer Truth Memory Corporation announced that it has successfully demonstrated the world's first 8 Mb SOT-MRAM chip, using a 110 nm technology node.

TMC developed a fully-integrated wafer-level SOT-MRAM manufacturing flow based on an autonomous 8-inch platform compatible with mainstream CMOS back-end processes. TMC says that through optimized magnetic stack engineering and low-damage etching with precise sidewall passivation, it has developed high-performance SOT-MTJ arrays with 150 nm.