MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies.
MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.
Hprobe, a developer of testing equipment for magnetic devices, says its first Hprobe MRAM tester was qualified for use by a major Taiwan-based foundry for production use. Hprobe says that this is an important milestone and the company believes it is just the beginning of the global MRAM production ramp up.
Hprobe recently announced that it developed a new technology for ultra-fast (<1 second) testing of STT magnetic tunnel junctions under perpendicular magnetic field at above 2 Tesla.
Everspin Technologies announced that it has signed an IP cross-licensing agreement with Seagate Technology. Everspin will license specific Tunneling Magnetoresistance (TMR) patents to Seagate, while Seagate will license MRAM patents to Everspin.
Everspin says its IP portfolio is now stronger which will provide further protection to for its products and services, while Seagate will gain license to TMR IP which can be used in HDD head technology.
In August 2018 IBM announced that it adopted Everspin's 256Mb STT-MRAM chips in its enterprise SSD FlashSystem. Now IBM announced that it's latest FlashCore modules will use Everspins 1Gb STT-MRAM chips.
Using MRAM instead of DRAM memory enabled IBM to remove the relatively large supercapacitors (used to make the DRAM non-volatile) and so the company was able to reduced the size of its drives and switch to a standard 2.5-inch U.2 drive form factor.
Everspin Technologies announced that Cadence Design is now providing DDR4 Design IP (DIP) and Verification IP (VIP) support for Everspin’s 1 Gb STT-MRAM memory. Cadence has supported Everspin's STT-MRAM products since 2012. Everspin customers will now be able to request 1Gb MRAM-enabled IP and VIP for their Custom ASIC solutions.
Everspin’s 1 Gb STT-MRAM product family includes both 8bit and 16-bit DDR4 compatible (ST-DDR4) interface versions of the device and are available in a JEDEC-compliant BGA package.
Hprobe, a developer of testing equipment for magnetic devices, announced that it developed a new technology for ultra-fast (<1 second) testing of STT magnetic tunnel junctions under perpendicular magnetic field at above 2 Tesla.
Hprobe will integrate the new technology into its Hprobe ATE systems to drastically enhance the sorting flow of STT-MRAM wafers at major 300mm foundries.
Everspin Technologies announced a partnership with Sage Microelectronics Corporation under-which Sage will provide native support for Everspin's 1Gb STT-MRAM memory in its Enterprise Grade Flash memory controller.
Sage provides cutting-edge, enterprise-class controllers for industries including, aerospace, automotive, industrial and data center storage solutions, offering SSD storage solutions and also delivering high-performance RAID/Port-Multiplier controllers.
Everspin Technologies announced that Phison Electronics Corp. will provide native support for Everpsin's 1 Gb STT-MRAM memory in its next generation enterprise SSD controller lineup. Everspin says that its MRAM technology, added to Phison's controllers, will enable storage system designers to increase the reliability and performance of systems where high-performance data persistence is critical. MRAM will enable protection against power loss without the use of batteries or supercapacitors.
Phison Electronics ships over 600 million NAND flash controllers annually.