Everspin Technologies is expanding its high-reliability (HR) PERSYST xSPI STT-MRAM portfolio, adding a new 256Mb density product. The company also announced that it has completed full production qualification for its 64Mb MRAM product, which has now completed full production qualification for the AEC-Q100 Grade 1 specification. 

Everspin's HR xSPI 64Mb STT-MRAM It is currently available for customer orders and supports high-volume production programs, with inventory available through Everspin’s authorized distributors worldwide.

Everspin Technologies announced its financial results for Q4 2025, with a 12% increase in revenues to $14.8 million, and a net income of $2.6 million. Everspin says that its strong Q4 performance reflects the growing demand for its MRAM solutions across various sectors, especially in data centers, energy managements, aerospace and industrial automation.

Everspin ended the quarter with cash and cash equivalents of $44.5 million, down $0.8 million from $45.3 million at the end of Q3 2025.

Avalanche Technology announced that has achieved the phase-one milestone of its magnetic cell scaling project, as it aims to be able to produce higher-density space-grade MRAM. This cell size reduction, in concert with additional planned geometry shrink, will enable the increase in memory density by 16X.

Avalanche has successfully established high density MTJ array manufacturing in a high volume production environment at 22 nm process node, achieving an MTJ critical dimension (CD) of 40 nm with a pitch of 100nm and below. Avalanche says that through rigorous optimization of MTJ hard mask and etch processes, the dense array delivers low bit error rates, enabling a minimum cell size of 0.01 μm² and high yield, gigabit class monolithic chip production, with demonstrated scalability to 12 nm process nodes.

pMTJ STT-MRAM developer Avalanche Technology announced that Aitech has chosen the company's space-grade MRAM technology for its unmanned rovers and deep space autonomous exploration platforms.

These platforms, designed for harsh environments where system failure is not an option, are designed to offer unparalleled radiation immunity, survivability, adaptability and the highest-reliability performance.

Avalanche Technology is introducing its next-generation VNX+ storage module, that is designed specifically for military and Low Earth Orbit (LEO) environments.

Avalanche says that its new solution delivers unparalleled radiation immunity, survivability in congested electromagnetic environments, and highest-reliability performance, based on the company's Space Grade MRAM.

On January 28, Avalanche Technology filed a lawsuit in the United States District Court for the District of Delaware, against Everspin Technologies saying that Everspin's STT-MRAM technology infringes upon Avalanche's patents.

Avalanche says that there are 4 patents that Everspin infringes upon : U.S. Patents 9,318,179, 9,419,210, 11,678,586, and 10,490,737.  The Lawsuit requests customary remedies for patent infringement and the ITC Complaint requests that the U.S. ITC  Investigation commence an investigation.

China-based MRAM developer Truth Memory Corporation announced that it has successfully demonstrated the world's first 8 Mb SOT-MRAM chip, using a 110 nm technology node.

TMC developed a fully-integrated wafer-level SOT-MRAM manufacturing flow based on an autonomous 8-inch platform compatible with mainstream CMOS back-end processes. TMC says that through optimized magnetic stack engineering and low-damage etching with precise sidewall passivation, it has developed high-performance SOT-MTJ arrays with 150 nm.

pMTJ STT-MRAM developer Avalanche Technology announced that it has joined forces with NHanced Semiconductors to build a new rad-hard system-in-package FPGA integration designed to enable satellite and defense missions with dependable standby capability and high-confidence operational performance.

US-based NHanced Semiconductor, an advanced packaging foundry specializing in leading-edge BEoL semiconductor technologies, selected Avalanche MRAM as its partner, saying that Avalanche's memory architecture is radiation-immune, with error detection and correction built directly into the memory die. This allows radiation-induced errors to be handled seamlessly without system resets or data loss, reducing the complexity of integration and ensuring the boot memory operates reliably in harsh space environments.

Back in 2011, Russia's state-owned VC RusNano invested $125 million into MRAM developer Crocus, aiming to bring MRAM manufacturing into Russia. The project did not succeed, and the proposed fab never saw the light of day and Crocus did not stay in business.

According to a report in Russia, RusNano is now suing its former chief Anatoly Chubais, and other ex-managers, seeking $150 million in damages. It claims these losses were caused by "unreasonable and irresponsible decisions" made by the fund's managers.

Researchers from the Institute of Science Tokyo (formerly Tokyo Tech), in collaboration with Western Digital, developed a new MRAM free layer with a giant perpendicular magnetic anisotropy, with the potential scaling to CMOS 5 nm process. This is said to be the most advanced MRAM free layer to date.

The researchers explain that by using the Boron-rich Co₁₉Fe₅₆B₂₅ layer in combination with the Boron-blocking Mo underlayer and the spinel MgAl₂O₄ oxide layer, they have realized giant perpendicular magnetic anisotropy in CoFeB with Hk as high as 17.5–19.5 kOe (x 3 improvement) and Keff as high as 6.9 -9.4 × Merg cm−3 (x 2 improvement).