MRAM-Info: the MRAM experts

MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies.

MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.

Recent MRAM News

MRAM-info launches new marketing and advertisement opportunities for memory companies!

As part of the recent reorganization of MRAM-Info's service and operation paradigm, we are proud to offer a whole new marketing approach! We believe in marketing schemes that are tailor-made to be a perfect fit to our clients' needs and budgets. We offer various marketing options and tools, from sponsored posts and email blasts, through banners and newsletter promotions, to bespoke content creation and additional custom solutions.

MicroLED-Info's marketing options imageWhether your company is looking for new customers, exposure to new potential markets, collaborations, investments or brand-enhancement, MRAM-Info is the perfect venue. Our readers represent the entire memory eco-system, including researchers, materials producers, chip makers, equipment makers, investors, engineers, C-level management and more.

Everspin starts pilot production of its 28nm 1-Gb STT-MRAM chips

Everspin Technologies announced that it completed the development activity and entered the pilot production phase of its 28 nm 1-Gigabit (Gb) STT-MRAM chips. Everspin targets the enterprise infrastructure and data center markets which can utilize its MRAM technology to increase reliability and performance.

Everspin 1Gb STT-MRAM chip photo

Everspin 1-Gb chip family (EMD4E001G) includes both 8-bit and 16-bit DDR4 compatible (ST-DDR4) interface versions of the device and are available in a JEDEC-compliant BGA package.

Avalanche Technology raises $33 million in a new funding round

pMTJ STT-MRAM developer Avalanche Technology announced that it closed its latest funding round led by Thomvest Ventures, having raised $33 million.

Avalanche currently brands its MRAM chips as P-SRAM (persistent SRAM) devices. The new funds will enable the company to develop higher-density P-SRAM devices. In addition, Avalanche says it will develop the higher densities of "persistent DRAM" required for the next generation of machine learning architectures.

Optically-assisted MRAM could outperform current MRAM devices by a factor of 1000

Researchers from the Moscow Institute of Physics and Technology developed a new MRAM architecture that is based on THz pulses which are used to change the spin state. This so-called optically-assisted MRAM is extremely efficient (the power required to switch a "bit" will be a thousand times smaller compared to current MRAM devices) and fast.

The researchers use picosecond-long pulses (3 picoseconds = one light oscillation cycle) on a specially developed structure comprised from micrometer-sized gold antennas deposited on a thulium orthoferrite sample. The researcher admit that the material is excellent for fundamental research, but it may be too early to tell whether it could be used in the future for commercial applications. The researchers tell us that they re trying to raise funds now to start fundamental studies of this new optically-assisted MRAM.

Everspin repots its Q1 2019 financial results

Everspin announced its financial results for Q1 2019. Revenues in the quarter were to $10 million (down from $14.9 in Q1 2018). Net loss was $4.3 million (up from $1.3 million in Q1 2018).

At the end of the quarter, Everspin had $18.5 million in cash and equivalents. For the next quarter (Q2 2019), Everspin expects revenues to be in the range of $9.6 million to $10 million.

Hprobe teams up with IMEC to develop SOT-MRAM testing tools

Hprobe, a developer of testing equipment for magnetic devices, announced that it has teamed up with the IMEC research institute to jointly extend Hprobe's fast testing protocols for SOT-MRAM devices.

Hprobe wafer prober system photo

Hprobe has already begun to optimize its test flow for SOT-MRAM devices in order to bring the characterization and testing to an industrial level with the primary objective to reduce the testing time while maximizing yield.