MRAM-Info: the MRAM experts

MRAM (Magnetoresistive Random Access Memory) is a next-generation spintronics memory technology, based on electron spin rather then its charge. The adoption of MRAM is on the rise, with an expanding industry and market, driven by . This growth is driven by MRAM's high-speed, energy efficiency, and non-volatile data retention. MRAM-Info, established in 2004, is the world's leading MRAM industry portal.

Recent MRAM News

Mycronic acquires MRAM test equipment developer Hprobe

Hprobe, a developer of testing equipment for magnetic devices,  has been acquired by Mycronic, a Swedish high-tech company specializing in precision production equipment for the electronics industry. 

Hprobe IBEX WAT H3DM Light photo

Hprobe says that the integration represents a strategic move to enhance Hprobe’s technological and market leadership in MRAM and magnetic sensor testing, supporting the transition to high-volume manufacturing, and enhancing reliability and performance for end-users. by leveraging Mycronic’s global infrastructure, Hprobe will expand its presence across Asia, North America, and Europe while accelerating its technology and product roadmaps to meet growing demand for wafer testing of advanced MRAM and next-generation TMR sensors. 

Read the full story Posted: Mar 14,2025

Everspin introduces new automotive-grade MRAM products

Everspin Technologies announced new additiontions to its PERSYST EMxxLX family, the EM064LX HR and EM128LX HR, targeting automotive applications. These new chips will operate at temperatures from -40°C to +125°C, meeting the AEC-Q100 Grade 1 standard.

Everspin Technologies chip photo

The new chips offer capacities of 64Mb and 128Mb, Quad SPI Interface, fast write speeds and a simple architecture. Everspin will start offering engineering samples in June 2025, with mass production scheduled by the end of the year.

Read the full story Posted: Mar 11,2025

Everspin officially announces its $10.5 million MRAM IP and foundry services agreement with Purdue University

Last month, during Everspin's conference call, the company updated that it has signed a contract with Purdue University to advance AI hardware based on its MRAM technology, valued at $10.5 million over four years. Now the company has officially announced this new contract. 

Everspin 1Gb STT-MRAM chip photo

Everspin says that this is a strategic award to work with a consortium led by Purdue University to utilize Everspin MRAM as the underpinning in a program called CHEETA (CMOS+MRAM Hardware for Energy Efficient AI). The contract allows for phases totaling up to $10.5 million for Everspin Technologies over four years. The current phase with Everspin Technologies is valued at approximately $4 million.

Read the full story Posted: Mar 07,2025

Everspin reports its financial results for Q4 2024

Everspin Technologies reported its financial results for Q4 2024, with revenues of $13.2 million, and net income of $1.2 million. 

Everspin Technologies chip photo

Reflecting on the whole year, revenues in 2024 reached $50.4 million (down 21% from 2023) and net profit  was $0.8 million. At the end of Q4 2024, the company had 42.1 million in cash and equivalents, up $3.8 million from the previous quarter. 

Read the full story Posted: Feb 27,2025

Researchers exploit the Orbital Hall Effect to increase the performance of SOT-MRAM devices

Researchers from the Johannes Gutenberg University Mainz (JGU) in Germany, in collaboration with Antaios, have developed a new SOT-MRAM based platform that enables highly efficient and powerful data processing and storage.

By exploiting previously neglected orbital currents, the researchers have developed a unique magnetic material incorporating elements such as Ruthenium as a SOT channel—a fundamental building block of SOT MRAM—to significantly enhance performance. 

Read the full story Posted: Feb 08,2025

Numem to start sampling MRAM chiplets by the end of 2025

High-performance STT-MRAM developer Numem announced that it expects to start samplings its MRAM chipsets, to enable non-volatile, high-speed and ultra-low power solutions to chip designers.

Numem says that the company's chiplets deliver up to 4TB/sper 8-die memory stack, exceeding existing AI memoryHBM solutions.  It supports 4GB per stack package, and is optimized for AI applications across OEMs and hyperscalers.

Read the full story Posted: Jan 23,2025

VIPC grants $100,000 towards skyrmion-mediated MRAM research

The Virginia Innovation Partnership Corporation (VIPC) has awarded $100,000 to Virginia Commonwealth University (VCU) to expand the MRAM research conducted by Dr. Jayasimha Atulasimha

Atulasimha’s group is developing skyrmion-mediated MRAM (SkMRAM), a nanomagnet-based RAM technique that builds upon STT-MRAM technology while significantly improving energy efficiency. By adding a layer of heavy metal to STT-MRAM, energy consumption is reduced by 100-1000x, or 2-3 orders of magnitude. The resulting product is non-volatile, meaning that it can retain data even when the device is powered off, and has a very low write-errors rate, which means that it saves energy while writing information. It also doesn’t require standby power to retain information and is reliable. One patent currently covers this technology.

Read the full story Posted: Jan 16,2025

Vertical Compute, spun off from imec to develop MRAM-based solutions for AI, raises 20 million Euro

Vertןcal Compute, a new startup that was spun-off from the imec institute to commercialize its MRAM technology for AI applications, has raised 20 million Euro. The seed round was led by imec.xpand and supported by Eurazeo, XAnge, Vector Gestion, and imec.

The company says that it will develop an MRAM in-memory computing chiplet technology. The chiplet, according to the company, can reduce power consumption by 80% and speed up the execution of large language models for AI by 100X. It is believed that the company's MRAM is based on SOT-MRAM technology.

Read the full story Posted: Jan 15,2025

Osaka University researchers develop MRAM electric-field-based writing scheme

Researchers from Osaka University developed a new MRAM device architecture that enables an electric-field-based writing scheme with reduced energy consumption compared to the present current-based approach.

The researchers have developed a new component for electric field control of MRAM devices, with the key innovation being a multiferroic heterostructure with magnetization vectors that can be switched by an electric field. The researchers also demonstrate that two different magnetic states can be reliably realized at zero electric field by changing the sweeping operation of the electric field. This means a non-volatile binary state can be intentionally achieved at zero electric field.

Read the full story Posted: Jan 09,2025