MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies.
MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.
Everspin Technologies announced that the company will undergo a restructuring plan designed to reduce annual operating expenditures and achieve quarterly cash flow breakeven this year. At the end of January the company will reduce its headcount - an approximately 15% reduction of the workforce.
Everspin also announced that it reaffirms its Q4 2019 revenue guidance of $9.3 million to $9.7 million.
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Researchers from Tokyo's Institute of Technology (Tokyo Tech) developed a new MRAM cell structure (called USMR MRAM) that features a very simple structure with only two layers - which could hopefully enable lower-cost MRAM devices.
The new design uses a combination of a topological insulator with a ferromagnetic semiconductor which enables a giant unidirectional spin Hall magnetoresistance (USMR).
2019 is soon over - and this was another year of MRAM progress - with a wider range of chips on the market, new devices that use MRAM being released, eMRAM being introduced and exciting new research findings.
Here are the top 10 stories posted on MRAM-Info in 2019, ranked by popularity (i.e. how many people read the story):
Researchers from the National Taiwan University developed a new ultra low power STT-MRAM architecture, called Super Lattice STT-MRAM, or SL-STT-MRAM. The researchers say that SL-STT-MARM simultaneously achieves ultra-high MR ratio, high-speed switching, and low RA.
An SL-STT-MRAM is based on an SL-STT-MTJ, which uses a superlattice barrier to replace the single crystalline (MgO) barrier in traditional STT-MTJ. The superlattice barrier is made of alternating metal and insulator layers, in which only amorphous rather than single crystalline is used in the insulator. The SL-STT-MRAM features higher reliability for repeated writing than compared to traditional MgO based STT-MRAM.
Mentor announced that it will provide a unique IC test solution for the Arm's eMRAM compiler IP which is built on Samsung Foundry’s 28nm FDSOI process technology.
Mentor says it is working with Arm to leverage industry-leading Tessent software Built-In Self-Test (BIST) Design-for-Testability (DFT) technologies for testing the next-generation of Arm's eMRAM compiler IP in development.
Everspin Technologies announced that It is has received the qualification notice from a major OEM for its 1Gb STT-MRAM device. The company is now qualified to start making production shipments of its new chip for its first customer.
Everspin further announced that since it started MRAM production, it shipped over 120 Toggle MRAM and STT-MRAM devices.