MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies.
MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.
According to reports, Taiwan Semiconductor Manufacturing Company (TSMC) is aiming to start producing embedded MRAM chips in 2018 using a 22 nm process. This will be initial "risk production" to gauge market reception.
TSMC also aims to start embedded RRAM chip production in 2019.
This book discusses spin transfer torque (STT) based devices, circuits and memories. The book details the basic concepts and device physics, advanced STT applications and the outlook for the technology.
Other topics featured in the book include the architectures, performance parameters, fabrication, and the prospects of STT based devices - in addition to presenting a non-volatile computing architecture composed of STT based magneto-resistive and all-spin logic devices.
During Samsung Electronic's Foundry Forum, the Korean chip maker reaffirmed its goal to start producing STT-MRAM chips in 2018. In fact Samsung now says that it will mass produce these chips next year, while last year it said that 2018 will only see limited production while real mass production will only begin in 2019.
Samsung announced it will produce the 2018 MRAM chips will be produced using 8-nano low power plus (8LMPP) semiconductor foundry process. Samsung sees MRAM produced by 4LPP by 2020.
Luc Thomas from Headway, a TDK-owned recording head designer and producer, explains the basic principles and challenges of STT-MRAM for embedded memory applications:
This lecture was given at the MSST 2017 Mass Storage Conference (May 15 — 19, 2017).
MRAM chip maker Everspin reported its financial results for Q1 2017. Revenues reached $7.9 million (up from $6.2 million in Q1 2016) while the net loss was $6.1 million (up from a loss of $4.5 million in Q1 2016). Everspin says that is received strong bookings for its first-generation toggle MRAM products during the quarter, while design activity for both toggle and STT-MRAM chips continue to gain traction.
Everpin says it was selected by a major auto maker to include its Gen-1 MRAM chips in an emergency call system and a high-end navigation platform.
This book aims to provide an introduction to promising emerging memories under development. The book's target audience is the chip designer, and it offers expanded, up-to-date coverage of emerging memories circuit design.
The book covers four main next-gen technologies: MRAM, RRAM, FeRAM and PCRAM and explores the array organization, sensing and writing circuitry, programming algorithms and error correction techniques.
Researchers from Helmholtz-Zentrum Berlin developed a robust and reliable magnetization switching process - that could one day lead to highly efficient spintronics memory devices.
The researchers used domain wall displacement to switch between two possible vortex states - without any applied field. The basic idea is to use tiny tings which have slightly displaced holes.
