MRAM-Info: the MRAM experts

MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies.

MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.

Recent MRAM News

Domain wall displacement switching may lead to efficient spintronics memory devices

Apr 17, 2017

Researchers from Helmholtz-Zentrum Berlin developed a robust and reliable magnetization switching process - that could one day lead to highly efficient spintronics memory devices.

Magnetic switching by domain wall displacement (HZB photo)

The researchers used domain wall displacement to switch between two possible vortex states - without any applied field. The basic idea is to use tiny tings which have slightly displaced holes.

Everspin reports its financial results for Q4 2016

Mar 10, 2017

Everspin announced its financial results for Q4 2016. Revenues for the quarter reached $7.1 million (up from $6.8 million in Q4 2015) and the net loss reached $5.3 million (down from $6.3 million in Q4 2015).

For the whole of 2016, revenues were $27.1 million - up slightly from 2015 ($26.5 million). The net loss in 2016 was $16.7 million. Everspin says that most of the revenue in Q4 came from first-generation Toggle MRAM products. The company reports that design activity for both Toggle and STT-MRAM products continues to gain traction.

Everspin announces new MRAM customers and products

Mar 10, 2017

Everspin announced several new applications and customers for its MRAM solutions. First up is the new nvNITRO storage accelerator product family. These new cards (aimed for demanding applications such as financial transactions) are available in either 1Gb or 2Gb, and are based on Everspin's 256Mb DDR STT-MRAM chips. Later this year Everspin will release new models based on its 1Gb DDR4 chips which will enable capacities up to 16Gb.

Everspin nvNITRO NVMe PCIe STT-MRAM card photo

Everspin says that the nvNITRO operate at a very fast 1,500,000 IOPS with 6-ms end-to-end latency. Everspin is testing the first cards at customers now, and initial production will begin in Q2 2017.

Spin Transfer Technologies starts sampling 80nm OST-MRAM chips

Jan 26, 2017

Spin Transfer Technologies announced that it started to deliver fully functional ST-MRAM samples to customers in North America and Asia.

The sample devices are based on the company's Orthogonal Spin Transfer Magneto-Resistive Random Access Memory technology (OST-MRAM), and use 80nm perpendicular magnetic tunnel junctions (MTJs)., the latest generation of MRAM technology.

The best of 2016 - top MRAM stories

Dec 27, 2016

2016 is soon over - and this was a very exciting year for the MRAM industry. Everspin floated on the Nasdaq and started sampling 256Mb STT-MRAM chips, other companies also announced and launched MRAM devices, and IBM announced that the "time for STT-MRAM is now". Interest in MRAM technologies is certainly on the rise!

Here are the top 10 stories posted on MRAM-Info in 2016, ranked by popularity (i.e. how many people read the story):

Toshiba and Hynix prototype a 4 Gb STT-MRAM

Dec 20, 2016

Toshiba and SK Hynix co-developed a 4-Gbit STT-MRAM chip, and presented a prototype at IEDM 2016.

Toshiba Hynix 4Gb STT-MRAM mTJ array photo

The prototype chip is made from eight 512-Mbit banks, and the cell area is equivalent to that of DRAM - at 9F2, which Hynix says is much smaller than conventional STT-MRAMs (50F2).