MRAM-Info: the MRAM experts

MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies.

MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.

Recent MRAM News

Spin Transfer Technologies and Tokyo Electron to co-develop next-gen STT-MRAM devices

Oct 16, 2017

Spin Transfer Technologies (STT) announced that it has signed an agreement with Tokyo Electron (TEL) to collaborate on the development of next-generation SRAM and DRAM-class STT-MRAM devices.

Spin Transfer Technologies says that the combination of its STT-MRAM technology with TEL’s advanced PVD MRAM deposition tool will allow the companies to quickly develop processes for the highest density and endurance devices.

A new European project aims to develop a system-level STT-MRAM exploration flow

Oct 12, 2017

The EU launched a new project called GREAT H2020 moderated by the CEA-Spintec laboratory that plans to co-integrate multiple functions like sensors, RF receivers and logic/memory together within CMOS thanks to a single baseline technology in the same System on Chip.

MAGPIE process image

One of the project’s final objectives is to develop a system-level simulation and design of a representative IoT platform, integrating this technology. To achieve it, a unique exploration flow is proposed: MAGPIE. MAGPIE stands for Manycore Architecture enerGy and Performance evaluation Environment and has been jointly developed and funded through GREAT and the CONTINUUM ANR French project.

Spin Transfer Technologies raised $22.8 million via a convertible bridge facility

Oct 06, 2017

Spin Transfer Technologies announced that it has raised $22.8 million via a convertible bridge facility. STT says that this will help the company get ready to complete its Series B funding round, targeting strategic investors and planned to conclude by end of Q1 2018.

In January 2017 STT announced that it has started to deliver fully functional ST-MRAM samples to customers in North America and Asia. The sample devices are based on the company's Orthogonal Spin Transfer Magneto-Resistive Random Access Memory technology (OST-MRAM), and use 80nm perpendicular magnetic tunnel junctions (MTJs)., the latest generation of MRAM technology.

Samsung to soon start mass producing 28nm embedded MRAM

Sep 28, 2017

Samsung logoDigitimes reports that Samsung Foundry will soon start mass producing MRAM chips using Samsung's 28nm fully depleted silicon-on-insulator (FD-SOI) process technology.

Digitimes says that Samsung has collaborated with NXP on this project. Samsung has completed the tape-out of its embededd MRAM which will be first applied to NXP's new low-power i.MX-series chipset targeted at automotive, multimedia and display panel applications.

GlobalFoundries: 22nm eMRAM technology is now available, prototyping to start in Q1 2018

Sep 22, 2017

In September 2016 Everspin announced that its perpendicular (pMTJ) STT-MRAM memory is going to be deployed by Global Foundries as an embedded 22nm memory (as part of the 22FDX platform). Today GlobalFoundries (GF) announced that eMRAM technology is now available for the 22FDX platform.

GF says that its eMRAM technology is the industry's most advanced embedded memory solution, and it provides high performance and superior reliability for broad applications in consumer and industrial controllers, data centers, Internet of Things, and automotive.

Metalgrass launches a new knowledge hub to focus on Micro-LED displays

Aug 16, 2017

We are happy to announce a new Metalgrass knowledge hub, MicroLED-Info.com. This new site will focus on Micro-LED display technology and its future market. MicroLED is quickly becoming a promising future display technology.

Many expect the first Micro-LED devices to hit the market in the very near future, with first applications in the wearable market - and also in HUDs and HMDs. MicroLED promise great performance, very high efficiency and brightness - but of course there are still many technical challenges ahead.

Seagate demonstrate an MRAM-powered high performance SSD boot drive

Aug 15, 2017

Seagate demonstrate several new prototypes and technologies at Flash Memory Summit last week, and one of these is the new Nytron 5000B SSD drive that is a high-performance boot drive. The new device has 256GB of 3D MLC NAND and makes use of 1258MB of Everspin's STT-MRAM in addition to a "normal" DRAM cache.

Seagate SSD with MRAM cache prototype (August-2017)

Seagate says that the MRAM can be used as either a write cache for user data or it can be exposed directly as a separate storage namespace for explicit tiered storage. Seagate said that this is currently just a test-platform prototype - and not a preview of an upcoming product.