MRAM-Info: the MRAM experts

Objective Analysis and Coughlin Associates say that the emerging memory market will reach $20 billion in revenues by 2029, which will boost the emerging memory manufacturing equipment market to $854 million in revenues.

According to the "Emerging Memories Ramp Up" report, offered by Objective and Coughlin, the market will grow by displacing the currently used NOR flash and SRAM memories which are less efficient - and will also displace a share of the DRAM market. Emerging memories will be used both as standalone memory chips and as embedded memories within other chips (such as microcontrollers, ASICs, and even compute processors). Future process shrinks and improved economies of scale will drive down prices, which will allow emerging memories to compete more effectively against today’s most popular volatile and nonvolatile technologies.

Everspin Technologies announced that the company will undergo a restructuring plan designed to reduce annual operating expenditures and achieve quarterly cash flow breakeven this year. At the end of January the company will reduce its headcount - an approximately 15% reduction of the workforce.

Everspin also announced that it reaffirms its Q4 2019 revenue guidance of $9.3 million to $9.7 million.

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Researchers from Tokyo's Institute of Technology (Tokyo Tech) developed a new MRAM cell structure (called USMR MRAM) that features a very simple structure with only two layers - which could hopefully enable lower-cost MRAM devices.

The new design uses a combination of a topological insulator with a ferromagnetic semiconductor which enables a giant unidirectional spin Hall magnetoresistance (USMR).

2019 is soon over - and this was another year of MRAM progress - with a wider range of chips on the market, new devices that use MRAM being released, eMRAM being introduced and exciting new research findings.

Here are the top 10 stories posted on MRAM-Info in 2019, ranked by popularity (i.e. how many people read the story):

1. Samsung starts shipping 28nm embedded MRAM memory (Mar 8)
2. Intel says its embedded 22nm MRAM is production ready (Feb 20)
3. Everspin starts to ship customer samples of its 28nm 1Gb STT-MRAM chips (Jan 8)
4. Hprobe teams up with IMEC to develop SOT-MRAM testing tools (Apr 4)
5. NTHU researchers manage to manipulate exchange bias by spin-orbit torque (Mar 17)
6. Everspin starts pilot production of its 28nm 1-Gb STT-MRAM chips (Jun 12)
7. IBM to use Everspin's 1Gb STT-MRAM in its next-gen FlashCore modules (Aug 11)
8. Everspin reported its Q4 2018 financial results (Mar 15)
9. Hprobe says first MRAM tester qualified by a major foundry in Taiwan for production use (Sep 24)
10. Analysts expect MRAM revenues to grow 170X by 2029 to reach $4 billion (Jul 9)

Researchers from the National Taiwan University developed a new ultra low power STT-MRAM architecture, called Super Lattice STT-MRAM, or SL-STT-MRAM. The researchers say that SL-STT-MARM simultaneously achieves ultra-high MR ratio, high-speed switching, and low RA.

An SL-STT-MRAM is based on an SL-STT-MTJ, which uses a superlattice barrier to replace the single crystalline (MgO) barrier in traditional STT-MTJ. The superlattice barrier is made of alternating metal and insulator layers, in which only amorphous rather than single crystalline is used in the insulator. The SL-STT-MRAM features higher reliability for repeated writing than compared to traditional MgO based STT-MRAM.

Mentor announced that it will provide a unique IC test solution for the Arm's eMRAM compiler IP which is built on Samsung Foundry’s 28nm FDSOI process technology.

Mentor says it is working with Arm to leverage industry-leading Tessent software Built-In Self-Test (BIST) Design-for-Testability (DFT) technologies for testing the next-generation of Arm's eMRAM compiler IP in development.