Everspin Technologies reported its financial results for Q1 2025, with revenues of $13.1 million, above the company's previous guidance range, and  net loss of  of $1.2 million. At the end of the quarter, Everspin had $42.2 million in cash and equivalents, up slightly from the previous quarter.

The company did not change its guidance in 2025, saying that it expects a ramp up in revenue in the second half of the year. 

Researchers from Beihang University and Truth Memory Corporation have fabricated a 1 Kbit SOT-MRAM chip using a 180 nm complementary metal oxide semiconductor (CMOS) process, and implemented a physical unclonable function (PUF) on it. This research represents a significant step forward in the field of PUFs.

The newly developed SOT-MRAM sr-PUF achieves a strong, highly reliable, and reconfigurable PUF that can resist machine-learning attacks. The performance of the SOT-MRAM sr-PUF is remarkable - it has a challenge-response pair (CRP) capacity of 109. Its uniformity is 50.07%, diffuseness is 50%, uniqueness is 49.89%, and the bit error rate is 0%, even in a 375 K environment. These values are near-ideal, indicating excellent randomness and reliability.

Hprobe, a developer of testing equipment for magnetic devices,  has been acquired by Mycronic, a Swedish high-tech company specializing in precision production equipment for the electronics industry. 

Hprobe says that the integration represents a strategic move to enhance Hprobe’s technological and market leadership in MRAM and magnetic sensor testing, supporting the transition to high-volume manufacturing, and enhancing reliability and performance for end-users. by leveraging Mycronic’s global infrastructure, Hprobe will expand its presence across Asia, North America, and Europe while accelerating its technology and product roadmaps to meet growing demand for wafer testing of advanced MRAM and next-generation TMR sensors. 

Everspin Technologies announced new additiontions to its PERSYST EMxxLX family, the EM064LX HR and EM128LX HR, targeting automotive applications. These new chips will operate at temperatures from -40°C to +125°C, meeting the AEC-Q100 Grade 1 standard.

The new chips offer capacities of 64Mb and 128Mb, Quad SPI Interface, fast write speeds and a simple architecture. Everspin will start offering engineering samples in June 2025, with mass production scheduled by the end of the year.

Last month, during Everspin's conference call, the company updated that it has signed a contract with Purdue University to advance AI hardware based on its MRAM technology, valued at $10.5 million over four years. Now the company has officially announced this new contract. 

Everspin says that this is a strategic award to work with a consortium led by Purdue University to utilize Everspin MRAM as the underpinning in a program called CHEETA (CMOS+MRAM Hardware for Energy Efficient AI). The contract allows for phases totaling up to $10.5 million for Everspin Technologies over four years. The current phase with Everspin Technologies is valued at approximately $4 million.

Everspin Technologies reported its financial results for Q4 2024, with revenues of $13.2 million, and net income of $1.2 million. 

Reflecting on the whole year, revenues in 2024 reached $50.4 million (down 21% from 2023) and net profit  was $0.8 million. At the end of Q4 2024, the company had 42.1 million in cash and equivalents, up $3.8 million from the previous quarter. 

Everspin Technologies announced that its PERSYST MRAM is now validated for configuration across all Lattice Semiconductor Field Programmable Gate Arrays (FPGA). 

Everspin says that customers are already taking advantage of the MRAM support in their designs that utilize Lattice’s FPGA.

Researchers from the Johannes Gutenberg University Mainz (JGU) in Germany, in collaboration with Antaios, have developed a new SOT-MRAM based platform that enables highly efficient and powerful data processing and storage.

By exploiting previously neglected orbital currents, the researchers have developed a unique magnetic material incorporating elements such as Ruthenium as a SOT channel—a fundamental building block of SOT MRAM—to significantly enhance performance. 

High-performance STT-MRAM developer Numem announced that it expects to start samplings its MRAM chipsets, to enable non-volatile, high-speed and ultra-low power solutions to chip designers.

Numem says that the company's chiplets deliver up to 4TB/sper 8-die memory stack, exceeding existing AI memoryHBM solutions.  It supports 4GB per stack package, and is optimized for AI applications across OEMs and hyperscalers.

The Virginia Innovation Partnership Corporation (VIPC) has awarded $100,000 to Virginia Commonwealth University (VCU) to expand the MRAM research conducted by Dr. Jayasimha Atulasimha

Atulasimha’s group is developing skyrmion-mediated MRAM (SkMRAM), a nanomagnet-based RAM technique that builds upon STT-MRAM technology while significantly improving energy efficiency. By adding a layer of heavy metal to STT-MRAM, energy consumption is reduced by 100-1000x, or 2-3 orders of magnitude. The resulting product is non-volatile, meaning that it can retain data even when the device is powered off, and has a very low write-errors rate, which means that it saves energy while writing information. It also doesn’t require standby power to retain information and is reliable. One patent currently covers this technology.