MRAM-Info: the MRAM experts

Researchers from National Taiwan University demonstrate that chalcogenide material BiTe with non-epitaxial structure can give rise to a giant spin Hall ratio and SOT efficiency (~ 200%) without obvious evidence of topologically-protected surface state (TSS).

The researchers explain that a clear thickness-dependent increase of the SOT efficiency indicates that the origin of this effect is from the bulk spin-orbit interaction of such materials system. Efficient current-induced switching through SOT is also demonstrated with a low zero-thermal critical switching current density (~ 6×10⁵ A/cm²).

Researchers from the National University of Singapore (NUS) have identified a promising spintronics candidate material - few-layer thin semimetal molybdenum ditelluride (MoTe₂). When thinned to a few layer thickness, the MoTe₂ features excellent Spin Hall Effect properties.

The team now aims to incorporate MoTe₂ into functional devices - such as MRAM devices.

Hprobe, a developer of testing equipment for magnetic devices, has raised more than 2 million euros from a group of international investors. The new funds will support Hprobe's spintronics device testing development - which include MRAM and TMR sensors.

The investment round was led by Germany-based High-Tech Gründerfonds (HTGF), a public-private venture capital investment firm. Other investors include Taiwan ITRI's ITIC VC firm and TEL Venture Capital.

Objective Analysis and Coughlin Associates say that the emerging memory market will reach $20 billion in revenues by 2029, which will boost the emerging memory manufacturing equipment market to $854 million in revenues.

According to the "Emerging Memories Ramp Up" report, offered by Objective and Coughlin, the market will grow by displacing the currently used NOR flash and SRAM memories which are less efficient - and will also displace a share of the DRAM market. Emerging memories will be used both as standalone memory chips and as embedded memories within other chips (such as microcontrollers, ASICs, and even compute processors). Future process shrinks and improved economies of scale will drive down prices, which will allow emerging memories to compete more effectively against today’s most popular volatile and nonvolatile technologies.

Everspin Technologies announced that the company will undergo a restructuring plan designed to reduce annual operating expenditures and achieve quarterly cash flow breakeven this year. At the end of January the company will reduce its headcount - an approximately 15% reduction of the workforce.

Everspin also announced that it reaffirms its Q4 2019 revenue guidance of $9.3 million to $9.7 million.

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Researchers from Tokyo's Institute of Technology (Tokyo Tech) developed a new MRAM cell structure (called USMR MRAM) that features a very simple structure with only two layers - which could hopefully enable lower-cost MRAM devices.

The new design uses a combination of a topological insulator with a ferromagnetic semiconductor which enables a giant unidirectional spin Hall magnetoresistance (USMR).