MRAM-Info: the MRAM experts

MRAM (Magnetoresistive Random Access Memory) is a next-generation spintronics memory technology, based on electron spin rather then its charge. The adoption of MRAM is on the rise, with an expanding industry and market, driven by . This growth is driven by MRAM's high-speed, energy efficiency, and non-volatile data retention. MRAM-Info, established in 2004, is the world's leading MRAM industry portal.

Recent MRAM News

Everspin announces its financial results for Q3 2025

Everspin Technologies announced its financial results for Q3 2025, with revenues of $14.1 million (up 16% from $12.1 million in Q3 2024), non-GAAP net income of $1.5 million, and a net income of $54,000 (down from $2.3 million last year). At the end of the quarter, Everspin had $45.3 million in cash and equivalents - up $0.3 million in the quarter. 

Everspin Technologies chip photo

Everspin says that the strong sales were driven by high demand from its Low Earth Orbital Satellite, Casino Gaming and Energy Management segments. Its data center business remains strong with continued demand for toggle MRAM products for redundant array of independent disks or RAID from a broad selection of data center customers, including Dell, Supermicro, and others.

Read the full story Posted: Nov 06,2025

Frontgrade expands its MRAM product line, targeting aerospace, defense and industrial applications

Frontgrade Technologies announced that it has expanded its MRAM product line, adding two new series, the Dual Quad Serial Peripheral Interface (Dual QSPI) series and the Parallel series. With these new MRAM chips, Frontgrade is targeting aerospace, defense, and industrial applications.

The Dual QSPI series, powered by STT-MRAM, offers a wide range of densities, 128Mb and 1/2/4/8Gb. These new devices bring flash-like non-volatility with SRAM-level speed and endurance. The Dual QSPI interface enables high-speed, synchronous communication and seamless integration into new or existing architectures. These memory chips are designed for boot, configuration, code execution, and data logging.

Read the full story Posted: Nov 05,2025 - 2 comments

Researchers from Intel and Georgia Tech design a 7 nm SOT-MRAM device

Researchers from Intel, in collaboration with researchers at Georgia Institute of Technology designed a new SOT-MRAM device at 7 nm. This work spans the entire project range, from device-level characteristics to system-level power performance area. 

Based on ASAP7 PDK design rules, the researchers created the bit-cell and peripheral layouts for SOT-MRAM and designed the entire array. Based on place and route, the system-level PPA was calculated for various memory capacities, demonstrating bit-densities up to 14.8 Mb/mm2 and read bandwidths up to 2.98 GB/s. 

Read the full story Posted: Nov 03,2025

Renesas introduces the new RA8M2 and RA8D2 MCUs with 1Mb embedded MRAM

Renesas Electronics Corporation introduced two new MCUs, the RA8M2 and RA8D2, both based on 1 Ghz Arm Cortex-M85 processors. Renesas says that these new MCUs deliver an unmatched 7300 Coremarks of raw compute performance, the industry benchmark for MCUs. The optional Cortex-M33 processor enables efficient system partitioning and task segregation.

Both the RA8D2 and RA8M2 offer embedded 1MB high-speed MRAM and 2MB SRAM. SIP options with 4 or 8 MB of external flash in a single package are also available for more demanding applications. 

Read the full story Posted: Oct 26,2025

Researchers use TmIG to enhance the efficiency of SOT-MRAM

Researchers at Japan's Kyushu University have developed a new SOT-MRAM memory cell based on thulium iron garnet (TmIG). The researchers say that this material can enhance the efficiency of the memory cell.

The researchers say that TmIG, originally developed in Japan in 2012, is promising, but it requires a very high quality thin film deposition to be used in a memory device. The team has managed to now produce the material in this high quality, using an established mass production method called on-axis sputtering.

Read the full story Posted: Oct 12,2025

Everspin to integrate its MRAM memory into the Quintauris RISC-V ecosystem

Everspin Technologies announced a strategic collaboration with RISC V-based products developer Quintauris, to bring advanced memory solutions into the Quintauris ecosystem.

Everspin Technologies chip photo

The two companies will integrate Everspin's MRAM into Quintauris’ reference architectures and real-time platform, with an aim to target automotive, industrial and edge applications where data persistence, integrity, low latency and security are critical.

Read the full story Posted: Oct 02,2025

The Renesas RA8T2 motor control MCU has up to 1MB of high-speed MRAM

Renesas Electronics launched a new high-end motor control MCU, the RA8T2. It is based on a 1 GHz Arm Cortex-M85 processor with an optional 250 MHz Arm Cortex-M33 processor, to deliver a high performance level to address real-time control of high-end motors in industrial equipment, robots, and other systems.

The RA8T2 has an integrated 1MB high-speed MRAM, in addition to 2MB SRAM (including 256KB TCM for the Cortex-M85 and 128KB TCM for the M33). The RA8T2 Group MCUs are available now, along with the FSP software.

Read the full story Posted: Sep 27,2025

Researchers from TSMC, ITRI, Stanford and YMCT developed a 64-kilobit SOT-MRAM based on back-end-of-line-compatible β-tungsten

Researchers from TSMC, Sandford University, ITRI and National Yang Ming Chiao Tung University have fabricate a 64-kb SOT-MRAM based β-phase Tungsten that offers a spin–orbit torque switching of 1 ns, data retention of more than 10 years and a tunnelling magnetoresistance of 146%.

The researchers say that Tungsten is a promising heavy metal for such applications and can generate large spin–orbit torques when stabilized in its β-phase. However, the α-phase, which has a lower spin-Hall angle, is more thermodynamically stable. It is thus challenging to integrate metastable β-tungsten into complementary metal–oxide–semiconductor processes while maintaining phase stability under the back-end-of-line thermal constraints (400 °C for extended durations). 

Read the full story Posted: Sep 03,2025

Everspin announces good financial results for Q2 2025

Everspin Technologies announced its financial results for Q2 2025. Total revenues were $13.2 million, up from $10.6 million in Q2 2024, while the company's net loss was $0.7 million, down from a $2.5 million loss a year ago.

Everspin 1Gb STT-MRAM chip photo

EVerspin says that its results came at the high end of expectations, driven by strong demand across its entire MRAM product portfolio. The company generated $2.9 million in cash during the quarter, and now was $45 million in cash and equivalents.

Read the full story Posted: Aug 07,2025

Renesas launched a new AI MCU that has 1 Mb of embedded on-chip MRAM

Renesas is introducing a new microcontroller (MCU) group, called the RA8P1, that is designed for artificial intelligence (AI), machine learning (ML), and real-time analytics applications. The devices, produced at TSMC's 22 nm ulta-low leakage process, target edge and endpoint AI applications, supporting convolutional and recurrent neural networks with up to 256 MACs per cycle

The RA8P1 combines a 1GHz Arm Cortex-M85 core, a 250MHz Cortex-M33 core, and an Arm Ethos-U55 Neural Processing Unit (NPU). The MCU use a 1 Mb on-chip embedded MRAM memory.

Read the full story Posted: Jul 05,2025