MRAM-Info: the MRAM experts

MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies.

MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.

Recent MRAM News

Samsung researchers are first to demonstrate MRAM-based in-memory computing

Researchers from Samsung's Advanced Institute of Technology (SAIT), have demonstrated what they say is the world’s first in-memory computing based on MRAM, targeting next-generation AI chips.

The researchers explain that In-Memory computing is a new paradigm that seeks to perform both data storage and data computing in a memory network. In such a computing system, a large amount of data, stored in the memory network, can be executed in a highly parallel manner. Power consumption in such systems is substantially reduced.

Researchers use MIFL to increase the magnetoresistance of pMTJs

Researchers from the University of Arizona developed a new pMTJ structure that exhibits high magnetoresistance, strong retention and is likely to achieve fast switching times as well.

pMTJ with multi-interface free layer (Arizona University)

The new structure uses a multi-interface free layer (MIFL) which incorporate multiple materials with different properties. The researchers used a ferromagnetic CoFeB layer with nonmagnetic Mo or MgO layers. The magnetoresistance can be controlled by changing the thickness of the CoFeB layer. The researchers managed to demonstrate a magnetoresistance of over 200%.

Researchers from Tohoku University developed the world's smallest STT-MRAM MTJ

Researchers from Tohoku University managed to fabricate the world's smallest STT-MRAM MTJ, at 2 nm. In addition, the researchers demonstrated fast switching (3.5 ns) in sub-five-nm STT-MRAM MTJs.

10-nm MTJ TEM photo, Tohoku University

The new MTJ were developed using a new multilayered ferromagnetic structure that can engineer characteristic relaxation time, which governs the magnetization dynamics in the ns regime.

Hprobe launches a next-generation MRAM wafer sort magnetic test head

Hprobe announced a new magnetic test head for MRAM Wafer Sort. The new module, the H3DM-XL, is at the heart of the latest addition to Hprobe’s IBEX line, the IBEX-WS.

Hprobe MRAM Wafer-Sort Magnetic Test Head (IBEX-WS)

The IBEX-WS test equipment integrates 3D magnetic field capabilities, while increasing field area and uniformity for wafer probing large MRAM arrays. It also features a unique patented robotized 3D Field Calibration Unit (FCU) for high-speed field mapping and monitoring.

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