MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies.
MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.
eVaderis announced that it is collaborating with Mentor to build advanced design solutions for embedded MRAM (eMRAM) technologies, based on Mentor's Analog FastSPICE (AFS) platform.
Earlier this month GlobalFoundries and eVaderis announced that the two companies are co-developing an ultra-low power microcontroller (MCU) reference design using GF’s embedded MRAM on the 22nm FD-SOI (22FDX) platform.
Everspin announced its financial results for Q4 2017 - revenues reached a record $10.1 million (up 43.3% from the $7.1 million in Q4 2016). Net loss in Q4 2017 was $4.4 million (down from $5.3 million in Q4 2016).
For the full year 2017, revenues increased 32.6% and reached a record $35.9 million (up from $27.1 million in 2016) - while the net loss in 2017 was $21.1 million.
GlobalFoundries and eVaderis announced that the two companies are co-developing an ultra-low power microcontroller (MCU) reference design using GF’s embedded MRAM on the 22nm FD-SOI (22FDX) platform.
The two companies say that this new reference design will bring together the superior reliability and versatility of GF’s 22FDX eMRAM and eVaderis’ ultra-low power IP. The new platform will support a broad set of applications such as battery-powered IoT products, consumer and industrial microcontrollers, and automotive controllers.
Researchers from Tohoku University developed new ultra-small (single-digit nanometer scale) magnetic tunnel junctions (MTJs) that have sufficient retention properties and yet can be switched by a current.
Tohoku University developed 20-nm CoFeB/MgO-based MTJs in 2010, in which an "interfacial anisotropy" at the CoFeB/MgO interface was utilized. But these will not work at under 20-nm. The researchers now used a "shape anisotropy" to achieve the smaller MTJs.
Everspin announced its preliminary unaudited financial results for Q4 2017. Total revenues is estimated at $10 million to $10.2 million, up from $9 million in Q3 2017 and $7.1 million in Q4 2016. The net loss is estimated at $4.3 million to $4.5 million (down from $5.4 million in the past quarter and $6.1 million in Q4 2016).
Total cash and equivalents as of the end of 2017 was $13 million. Everspin also announced it is set to raise about $25 million in a new underwritten public offering.
Everspin announced that the company recorded revenue for its first 40nm 256Mb STT-MRAM (pMTJ) products in Q4 2017, and is now ramping up volume production. The 256Mb STT-MRAM employs an innovative ST-DDR3 interface, unlocking performance previously unattainable in legacy MRAM components.
These new 40nm 256Mb chips are produced by Global Foundries, Everspin's production partner, which says it is on track to its risk production release of 22FDX eMRAM in 2018.
Crocus Nano Electronics (CNE) announced successful test results for its 90 nm pMTJ STT-MRAM technology. The company says it has developed unique materials that are able to deliver high data retention, tolerance to external magnetic fields and low switching currents. The company expects to produce its first engineering samples in later in 2018.
CNE also reports that it complete the design of its STT-MRAM test chip for further technology improvement in cooperation with eVaderis. Together with eVaderis, CNE created a "universal memory chip" able to serve as a platform for technology development through a wide range of MTJ sizes, currents and voltages ranges.