MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies.
MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.
Hprobe announced a new magnetic test head for MRAM Wafer Sort. The new module, the H3DM-XL, is at the heart of the latest addition to Hprobe’s IBEX line, the IBEX-WS.
The IBEX-WS test equipment integrates 3D magnetic field capabilities, while increasing field area and uniformity for wafer probing large MRAM arrays. It also features a unique patented robotized 3D Field Calibration Unit (FCU) for high-speed field mapping and monitoring.
The MRAM market is set for another record year in 2022, as MRAM chips and memories are increasingly being used in industrial, space, IT, automotive and other applications. If you are looking to promote your company's products and services for the MRAM market, increase industry awareness of your technology, and generate industry leads - MRAM-Info is the perfect choice!
MRAM-Info offers the easiest, most direct path to industry exposure, with specifically tailored marketing packages that will suit your needs. MRAM-Info is a well-established brand and a publication accessed by thousands of memory professionals and consumers each month, via our website, newsletter and social media channels.
Everspin Technologies announced its financial results for Q3 2021. Revenues increased 46.5% from last year to reach $14.8 million, and the company reported a record net income of $880k.
Everspin announced that during the quarter, it entered into two IP monetization deals worth $5.25 million, out of which $1.3 million was recognized in Q3. The rest of the amount will be recognized in Q4.
Researchers at Taiwan's Semiconductor Research Institute (TSRI) unveiled a new SOT-MRAM memory device that they developed in collaboration with University scientists.
The new device uses a perpendicular magnetic anisotropy (PMA) technique. According to the TSRI researchers, they are the second team to successfully produce MRAM chips based on PMA (Intel is the first team to have achieved this).
Advanced aerospace and defense mission-critical electronics developer CAES announced that its radiation-hardened microelectronic devices are on their way to Jupiter, as part of NASA’s Lucy Mission.
Lucy’s payload is comprised of a high-resolution visible imager, an optical and near-infrared imaging spectrometer and a thermal infrared spectrometer. CAES says that the payloaduses two memory devices - 16 Mbit SRAM and 16 Mbit MRAM. The company's UT8MR2M8 chip (shown above), basedon Everspin's MRAM, is a high performance, space grade, 16Mb non-volatile MRAM device with proven flight heritage.
In March 2019 Samsung Electronics announced that it has started to mass produce its first embedded MRAM devices, made using the company's 28nm FD-SOI process. In early 2021 Samsung announced that it managed to improve the MTJ function of its MRAM, which makes it suitable for more applications, and today, at the company's 5th Annual Samsung Foundry Forum, Samsung provides more details on its MRAM roadmap.
Samsung says it is advancing its 14 nm process which will support flash-type embedded MRAM which enables increased write speed and density. Samsung targets applications such as micro controller units (MCUs), IoT and wearables for its next-gen eMRAM.
pMTJ STT-MRAM developer Avalanche Technology announced the immediate availability of new 64Mb Industrial parallel asynchronous x16-interface high-reliability MRAM Persistent SRAM (P-SRAM) memory devices. Avalanche's P-SRAM is based on the company's STT-MRAM technology
These new deices, the latest in Avalanche's family of Industrial data logging products, require half the board space, consume 1/4th the power and have 3 times the magnetic immunity of the equivalent density Toggle MRAM in Industrial applications.