MRAM-Info: the MRAM experts

MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies.

MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.

Recent MRAM News

Intel researchers demonstrate 2MB STT-MRAM arrays suitable for on-chip L4 cache applications

Intel researchers have demonstrated 2MB STT-MRAM devices that are suitable for on-chip L4 cache applications. Intel says these devices feature data retention, endurance and bit error rates good enough for L4 cache.

Intel slide - STT MRAM L4 Cache

Intel's new STT-MRAM features 20 nm write times, 4 ns read times, an endurance of 1012 cycles and memory retention of one second at 110 degrees. The bit rates are good enough to be handled with error-correcting code (ECC) techniques. To achieve these features, Intel reduced the magnetic junction size to 55 nm (from 70-80 nm it had achieved before).

Researchers in Japan developed a high-speed SOT-MRAM memory cell compatible with 300mm Si CMOS technology

Researchers at Tohoku University demonstrated a high-speed spin-orbit-torque MRAM (SOT-MRAM) memory cell compatible with 300 mm Si CMOS technology.

The SOT device achieved high-speed switching (down to 0.35 ns) and a high thermal stability factor (E/kBT 70) which the researchers say is sufficient for high speed non-volatile memory applications. The device can withstand annealing at 400°C. The researchers used these devices to create a complete SOT-MRAM memory cell.

Researchers demonstrate a new memory device using an OLED and a MOS capacitor

Researchers from TU Dresden developed a novel memory device that is based on a combination of an light emitting material and a metal-oxide semiconductor (MOS) capacitor.

pinMOS memory structure (TU Dresden)

The so-called pinMOS device is a non-volatile memory-capacitor with high repeatability and reproducibility. pinMOS devices can store several states, since charges can be added or removed in controllable amounts. This device can also be controlled (read and write) both electrically and optically. The light emitting material is an OLED device.

Everspin announces its Q3 2019 financial results

Everspin Technologies announced its financial results for Q3 2019 - with revenues of $9.2 million (down from $11.5 million in Q3 2018) and a net loss of $3.7 million (down from $5.6 million in Q3 2018). Everspin says that it achieved record STT-MRAM revenues.

Everspin Technologies chip photo

At the end of the quarter, Everspin had $14.8 million in cash and equivalents. For the next quarter, it expects revenues to be between $9.3 million and $9.7 million.

Everspin expands its toggle-MRAM product portfolio, now offers 32Mb devices

Everspin Technologies announced that it has expanded its Toggle MRAM product portfolio, adding 2Mb, 8Mb and 32Mb capacities. Everspin's previous largest capacity Toggle MRAM was 16Mb, so the company now offers double the capacity to enable applications such as configuration storage, setup and data logging in embedded systems and more.

Everspin 128Kb automotive MRAM photo

Everspin's new 8Mb and 32Mb memory devices are currently sampling and production will begin in Q1 2020. The 2Mb device will start sampling by the end of 2019, and production will also begin in Q1 2020.

Hprobe says first MRAM tester qualified by a major foundry in Taiwan for production use

Hprobe, a developer of testing equipment for magnetic devices, says its first Hprobe MRAM tester was qualified for use by a major Taiwan-based foundry for production use. Hprobe says that this is an important milestone and the company believes it is just the beginning of the global MRAM production ramp up.

Hprobe wafer prober system photo

Hprobe recently announced that it developed a new technology for ultra-fast (<1 second) testing of STT magnetic tunnel junctions under perpendicular magnetic field at above 2 Tesla.