MRAM-Info: the MRAM experts

MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies.

MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.

Recent MRAM News

Everspin starts to ship customer samples of its 28nm 1Gb STT-MRAM chips

Everspin Technologies announced that it started to ship pre-production customer samples of its 28 nm 1Gb STT-MRAM chips in December 2018. Everspin already announced that it started to sample these new 1Gb STT-MRAM chips in November 2018.

Everspin 1Gb STT-MRAM chip photo

In November 2017 Everspin announced it will delay its 1Gb STT-MRAM chips as its focus has shifted to its 256 Mb STT-MRAM chips. It is great, tough, to see Everspin progressing with its larger MRAM chip and we hope that mass production will begin, as planned, in the middle of 2019.

Tohoku University researchers develop the world's fastest STT-MRAM

Researchers from Japan's Tohoku University developed a 128 Mb STT-MRAM device that features a write speed of 14 nm, the world's fastest STT-MRAM chip at a density over 100 Mb.

Tohoku 128 MB STT-MRAM 14 ns write speed image

To achieve this high speed, the researchers developed MTJs that are integrated with CMOS, which also significantly reduces the power-consumption of the memory device.

Gyrfalcon's new AI chip first to use TSMC's embedded MRAM

In June 2017 it was reported that Taiwan Semiconductor Manufacturing Company (TSMC) will start producing embedded MRAM in 2018 using a 22 nm process. In what may bet he first adoption of TSMC's eMRAM technology, AI accelerator startup Gyrfalcon Technology announced the commercial availability of its LightSpeeur 2802M, AI ASIC that include TSMC's eMRAM.

The 2802M ASIC has 40MB of eMRAM memory, which can support large AI models or multiple AI models within a single chip. Applications include image classification, voice identification, voice commands, facial recognition, pattern recognition and more.

Yole Developpement sees STT-MRAM leading the embedded emerging-NVM market

Market analyst firm Yole Developpement presents its latest next-generation memory forecasts in an interesting new article. The company says that following more than 15 years of development, PCM is finally taking off in stand-alone applications due to strong support from Intel and Micron.

Emerging NVM market (2018-2023, Yole)

STT-MRAM is expected to lead the embedded memory race as many foundries are rushing to add MRAM support and expertise to their product lines. STT-MRAM is promising for enterprise storage SCM.

IMEC: STT-MRAM is suitable for 5 nm last level cache, offers significant energy gains over SRAM in large memory densities

Researchers at Belgium-based research institute Imec presented the first power-performance area comparison between SRAM and STT-MRAM last-level cache at the 5 nm node.

The analysis, based on design-technology co-optimization and silicon verified models, reveals that STT-MRAM meets the performance requirements for last-level caches in the high-performance computing domain. For larger memory densities, STT-MRAM was found to offer significant energy gains compared to SRAM.

Silvaco and TU Wien launches a new MRAM device simulation laboratory

EDA and semiconductor IP provider Silvaco announced today that Austria's second Christian Doppler Laboratory (CDL) was opened in collaboration with TU Wien's Institute for Microelectronics. The new CDL will develop new MRAM device simulation solutions.

TU Wien's Dr. Viktor Sverdlov, who heads the new CDL, says that "MRAM has the potential to deliver both more memory density and much lower power consumption extending memory beyond the current solutions".