MRAM-Info: the MRAM experts

MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies.

MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.

Recent MRAM News

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Read the full story Posted: Jun 10,2024

Samsung on track to start 14 nm eMRAM production by the end of 2024, 8 nm by 2026 and 5 nm by 2027

In 2019, Samsung Electronics announced that it has started to mass produce its first embedded MRAM devices, made using the company's 28 nm FD-SOI process. In 2021, Samsung announced it is working to scale down to 14 nm processes.

The company now says that it has finalized the development of its 14 nm eMRAM process, and will be read to mass produce it by the end of 2024. The company says that the 14 nm process achieve a 33% area scaling compared to its 28 nm process, and it also enables a 2.6x faster read cycle time. Samsung says that its eMRAM enables the smallest size 16MB memory die.

Read the full story Posted: Jun 01,2024

Numem and IC’ALPS co-develop a custom MRAM-powered AI accelerator

High-performance STT-MRAM developer Numem announced that in collaboration with ASIC/SoC designer IC’ALPS it has developed an integrated circuit with RISC-V processors, 2MBytes of NuRAM and a DSP/AI Custom Datapath Accelerator.

The two companies co-developed the SoC in an advanced technology node, taking advance of the high-performance and low power consumption of Numem's memory technology. The company also details that the physical implementation of this integrated circuit was made in a secure space (isolated location, network, and servers, and encrypted exchanges) to meet with the stringent protection of sensitive data required by this program. Numem and IC’Alps intend to extend their partnership to serve new SoC projects for customers.

Read the full story Posted: May 31,2024

Everspin reports its financial results for Q1 2024

Everspin Technologies announced its financial results for the first quarter of 2024. Revenues were $14.4 million (down slightly from Q1 2023) and a small loss of $0.2 million (compared to a net income of $0.8 million in Q1 2023).

Everspin Technologies chip photo

Everspin reports continued weakness in Asia Pacific, and in the industrial, consumer and automotive markets. However, it is also expecting a ramp up in both design wins and shipments for both toggle MRAM and STT-MRAM in the second half of 2024. In the next quarter, however, it expects revenues to drop significantly to $10 million to $11 million.

Read the full story Posted: May 03,2024

Everspin rebrands its persistent memory product family as PERSYST

Everspin Technologies announced that its persistent memory product family is now organized under the new brand name PERSYST. Everspin says that this new initiative to simplify product identification beyond conventional alphanumeric identifiers will make it easier for companies select the right solutions. The company’s legacy toggle MRAM parallel and serial products, 1Gb ST-DDR4 and new EMxxLX xSPI Industrial STT-MRAM will reside under the PERSYST brand.

Everspin Technologies chip photo

Everspin says that the PERSYST family of products represents the unique combination of RAM-like speed and latency with non-volatility. With virtually unlimited endurance, PERSYST provides the speed and persistence to capture critical data continuously. It's perfect for use in a variety of industries, such as, automation, robotics, networking, data storage, AI, healthcare, gaming and FPGA.

Read the full story Posted: Apr 09,2024

NETSOL signs Digi-Key MRAM and SRAM distribution agreement

Netsol is pleased to announce a global distribution partnership with Digi-Key Electronics, a pivotal development in its effort to improve global access and delivery of its MRAM and SRAM  products.

Digi-Key Electronics is recognized for its immense inventory of electronic parts that are immediately available for shipment. This capability aligns perfectly with the demands of the fast-paced electronics industry, where Digi-Key has distinguished itself by ensuring rapid, efficient delivery services to its global customer base. 

Through this newly forged agreement, Digi-Key will leverage its extensive online presence, spanning over 180 countries, to market and distribute Netsol's memory products to customers around the globe.

Read the full story Posted: Mar 28,2024

Avalanche Technology adds new 2Gb and 8Gb densities of its 3rd-Gen space-grade STT-MRAM

pMTJ STT-MRAM developer Avalanche Technology launched two new densities of its 3rd generation space-grade parallel asynchronous x32-interface high-reliability P-SRAM (Persistent SRAM) memory devices, based on its latest STT-MRAM tech, in 2Gb and 8Gb.

In June 2023 Avalanche announced that it is providing its products for satellite power applications developed by Advanced Space Power Equipment. Earlier that year Avalanche announced that its Gen-3 Space Grade Dual QSPI solution is now available in pre-production.

Read the full story Posted: Mar 27,2024

Researchers report the first all-antiferromagnetic tunnel junction device with both electrical switching and electrical readout

Researchers from Northwestern University, led by Prof. Pedram Khalili, report the first all-antiferromagnetic tunnel junction (ATJ) devices with both electrical switching and electrical readout of the antiferromagnetic state. The researchers observed a large room-temperature tunneling magnetoresistance effect that is comparable in size to conventional ferromagnet-based tunnel junctions. 

To create the new devices, the researchers used sputtering to deposit the device films on conventional silicon wafers. The films are compatible with established semiconductor manufacturing processes. 

Read the full story Posted: Mar 23,2024

Tiempro Secure's Secure Element succesfully implemented in GlobalFroundries 22-nm process with MRAM memory

France-based Tiempro Secure announced that its TESIC RISC-V Secure Element was implemented in GlobalFoundries’ 22-nm platform with embedded MRAM, after a rigorous characterization process.

Tiempo Secure says it leveraged its long-standing know-how in Secure IP, to adapt its TESIC  design to the 22FDX technology process node. The TESIC platform has a secure architecture based on a RISC-V CPU core, several memory types (including ROM, RAM, Cache,  Crypto-RAM, and MRAM), random number generators, security  sensors, and secure crypto-accelerators. This provides a pre-silicon  certified IP solution on GF’s 22FDX to SoC manufacturers who require a high-end Secure  Element.

Read the full story Posted: Mar 21,2024