MRAM-Info: the MRAM experts

MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies.

MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.

Recent MRAM News

Samsung reaffirms 2018 target for STT-MRAM mass production

May 26, 2017

During Samsung Electronic's Foundry Forum, the Korean chip maker reaffirmed its goal to start producing STT-MRAM chips in 2018. In fact Samsung now says that it will mass produce these chips next year, while last year it said that 2018 will only see limited production while real mass production will only begin in 2019.

Samsung announced it will produce the 2018 MRAM chips will be produced using 8-nano low power plus (8LMPP) semiconductor foundry process. Samsung sees MRAM produced by 4LPP by 2020.

Everspin reports its financial results for Q1 2017

May 16, 2017

MRAM chip maker Everspin reported its financial results for Q1 2017. Revenues reached $7.9 million (up from $6.2 million in Q1 2016) while the net loss was $6.1 million (up from a loss of $4.5 million in Q1 2016). Everspin says that is received strong bookings for its first-generation toggle MRAM products during the quarter, while design activity for both toggle and STT-MRAM chips continue to gain traction.

Everspin 128Kb automotive MRAM photo

Everpin says it was selected by a major auto maker to include its Gen-1 MRAM chips in an emergency call system and a high-end navigation platform.

New MRAM book: In Search of the Next Memory: Inside the Circuitry from the Oldest to the Emerging Non-Volatile Memories

This book aims to provide an introduction to promising emerging memories under development. The book's target audience is the chip designer, and it offers expanded, up-to-date coverage of emerging memories circuit design.

The book covers four main next-gen technologies: MRAM, RRAM, FeRAM and PCRAM and explores the array organization, sensing and writing circuitry, programming algorithms and error correction techniques.

Domain wall displacement switching may lead to efficient spintronics memory devices

Apr 17, 2017

Researchers from Helmholtz-Zentrum Berlin developed a robust and reliable magnetization switching process - that could one day lead to highly efficient spintronics memory devices.

Magnetic switching by domain wall displacement (HZB photo)

The researchers used domain wall displacement to switch between two possible vortex states - without any applied field. The basic idea is to use tiny tings which have slightly displaced holes.

Everspin reports its financial results for Q4 2016

Mar 10, 2017

Everspin announced its financial results for Q4 2016. Revenues for the quarter reached $7.1 million (up from $6.8 million in Q4 2015) and the net loss reached $5.3 million (down from $6.3 million in Q4 2015).

For the whole of 2016, revenues were $27.1 million - up slightly from 2015 ($26.5 million). The net loss in 2016 was $16.7 million. Everspin says that most of the revenue in Q4 came from first-generation Toggle MRAM products. The company reports that design activity for both Toggle and STT-MRAM products continues to gain traction.

Everspin announces new MRAM customers and products

Mar 10, 2017

Everspin announced several new applications and customers for its MRAM solutions. First up is the new nvNITRO storage accelerator product family. These new cards (aimed for demanding applications such as financial transactions) are available in either 1Gb or 2Gb, and are based on Everspin's 256Mb DDR STT-MRAM chips. Later this year Everspin will release new models based on its 1Gb DDR4 chips which will enable capacities up to 16Gb.

Everspin nvNITRO NVMe PCIe STT-MRAM card photo

Everspin says that the nvNITRO operate at a very fast 1,500,000 IOPS with 6-ms end-to-end latency. Everspin is testing the first cards at customers now, and initial production will begin in Q2 2017.