MRAM-Info: the MRAM experts

MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies.

MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.

Recent MRAM News

Everspin reported its preliminary Q4 2020 and full-year 2020 financial results

Everspin Technologies announced its preliminary Q4 2020 financial results. Total revenues were $10 million, down from $10.1 million in Q3 and up from $9.7 million in Q4 2019. Net loss int he quarter was $1.6 million, but the company generated $0.6 million in cash flow - Everspin's second consecutive positive cash flow from operations quarter.

Everspin Technologies chip photo

Looking at FY2020, Everspin's revenues increased 12.1% to $42 million. At the end of the year, Everspin had $14.6 million in cash and equivalents. In Q4 2020, the company also received its first royalty revenue from GF for embedded 22FDX process MRAM.

Samsung improves its MRAM performance, will expand its target applications

In March 2019 Samsung Electronics announced that it has started to mass produce its first embedded MRAM, made using the company's 28nm FD-SOI process. The company now announced that it managed to improve the MTJ function of its MRAM, which makes it suitable for more applications.

Samsung eMRAM image

Samsung will now expand the application of its eMRAM solutions to more markets - specifically the automotive, wearable, graphic memory, low level cache, internet of things and edge artificial intelligence markets.

The best of 2020 - top MRAM stories

2020 is soon over - and many in the world are really happy about that and hope that 2021 will bring the COVID-19 pandemic to an end. The entire world was effected, including the MRAM industry, although it seems as if the fast pace of research and development continues.

Here are the top 10 stories posted on MRAM-Info in 2020, ranked by popularity (i.e. how many people read the story):

  1. Antiferromagnetic STT-MRAM technology enables efficient and dense memory (Feb 21)
  2. GlobalFoundries starts producing eMRAM solutions (Feb 29)
  3. Hprobe raises over 2 million Euros (Feb 6)
  4. Everspin reports its Q4 2019 financial results (Mar 13)
  5. Everspin and Globalfoundries extend their MRAM agreement to 12 nm (Mar 12)
  6. Chalcogenide materials can be highly suitable for SOT-MRAM (Feb 18)
  7. Everspin announced a restructuring plan to reduced expense (Jan 16)
  8. Researchers identify the semimetal MoTe2 as a promising MRAM material (Feb 6)
  9. Avalanche's Serial P-SRAM STT-MRAM memory devices are now shipping (Sep 29)
  10. New research may hold the key towards antiferromagnetic MRAM (May 13)

IBM to reveal the world's first 14nm STT-MRAM node

IBM announced that during the 2020 IEEE International Electron Devices Meeting (IEDM 2020), that is now being held virtually, its researchers will reveal the first 14 nm node STT-MRAM. IBM says that efficient and high-performance STT-MRAM systems will help to address memory-compute bottlenecks in hybrid cloud systems.

IBM says that the 14 nm node embedded MRAM which will be revealed is the most advanced MRAM demonstrated to date. It features circuit design and process technology that could soon enable system designers to replace SRAM with twice the amount of MRAM in last-level CPU cache.

Researchers find that FGT is an excellent material for SOT-MRAM devices

Researchers from Seoul's National University and Pohang's University of Science and Technology (POSTECH) report that a 2D iron germanium telluride (Fe3GeTe2, or FGT) layer is an excellent candidate to be used as the basis SOT-MRAM material.

Fe3GeTe2-based SOT-MRAM device structure (POSTECH / SNU)

An SOT-MRAM based on FGT is highly energy-efficient, in fact the researchers say that the measured magnitude of SOT per applied current density is two orders of magnitude larger than the values reported previously for other candidate materials.

Researchers develop the world's smallest high-performance MTJ

Researchers from Tohoku University say they have developed the world's smallest (2.3 nm) high-performance magnetic tunnel junctions (MTJs).

Shape anisotropy MTJ scheme (Tohoku University)

The design is based on the Shape-anisotropy MTJ (developed by the same researchers in 2018) in which thermal stability is enhanced by making the ferromagnetic layer thick. In this new research, the scientists used a new structure that uses magnetostatically coupled multilayered ferromagnets - which enabled the scaling down to 2.3 nm diameters.