MRAM-Info: the MRAM experts

MRAM-Info is a news hub and knowledge center born out of keen interest in MRAM memory technologies.

MRAM is a next-generation memory technology, based on electron spin rather then its charge. Often referred to as the "holy-grail of memory", MRAM is fast, high-density and non-volatile and can replace all kinds of memories used today in a single chip.

Recent MRAM News

Everspin reported its financial results for Q2 2022

Everspin Technologies announced its financial results for Q2 2022, with revenues of $14.71 million (up 24% from Q2 2021) and a net profit of $1.7 million . The company's had a positive cash flow of $4.3 million (up from a negative cash flow of $600,000 last year). At the end of the quarter Everspin had $23.1 million in cash and equivalents.

Everspin 1Gb STT-MRAM chip photo

Everspin expects that industry supply constraints will limit supply, and the company reduces its forecast for Q3 2022 - with revenues seen to be in the range of $14.4 million to $15.4 million. Everspin says that price increases from its suppliers and expenses related to 28nm STT-MRAM development will reduce its earnings next quarter and the company will be breakeven or with a small profit.

Read the full story Posted: Aug 12,2022

FALINUX to adopt Avalanche's 8Mb MRAM chips in its next-gen HMI products

pMTJ STT-MRAM developer Avalanche Technology announced that it is providing its MRAM Persistent SRAM chips to industrial touch screen applications developed by FALINUX.

Avalanche Technology SPnvSRAM G2 MRAM evaluation board photo

FALINUX is using Avalanche's 8Mb P-SRAM device in its next generation Human Machine Interface (HMI) products used in industrial automation systems. The company says it chose Avalanche's MRAM technology due to its ease of use, instant write capability, practically unlimited endurance and data retention in harsh environmental conditions.

Read the full story Posted: Aug 10,2022

Everspin announces a new 128Mbit xSPI STT-MRAM product

A few months ago, Everspin Technologies launched a new family of SPI/QSPI/xSPI interface MRAM products that offer the world's highest performance persistent memory with full read and write bandwidth of 400 Megabytes per second through the new JEDEC expanded Serial Peripheral Interface (xSPI) standard interface. The EMxxLX family was launched with densities ranging from 8 Mbit to 64 Mbit.

Everspin Technologies chip photo

Today Everspin announced a new xSPI MRAM device, the EM128LX, that expands the product line to 128Mbit.  Everspin says that the combination of increased density with up to 233 megabytes/second full read and write bandwidth means that system designers now have the option of merging code and data memory on the same device, reducing cost, power, and area.

Read the full story Posted: Aug 02,2022

ITRI joins forces with TSMC and NYCU to develop next-gen MRAM technologies

Taiwan's Industrial Technology Research Institute (ITRI) announced two new MRAM collaborations. The first one is with Taiwan's TSMC, for the development of SOT-MRAM array chips. The second collaboration is with National Yang Ming Chiao Tung University (NYCU) to develop magnetic memory technology that can perform across a wide operating temperature range of nearly 400 degrees Celsius.

Together with TSMC, ITRI is developing low-voltage and current SOT-MRAM, that features high write efficiecny and low write voltage. ITRI says that its SOT-MRAM achieves a writing speed of 0.4 nanoseconds and a high endurance of 7 trillion reads and writes. The memory also offers a data storage lifespan of over 10 years.

Read the full story Posted: Jun 28,2022

Renesas develops 22-nm circuit technologies for embedded STT-MRAM

Renesas announced that it has developed 22-nm embedded STT-MRAM circuit technologies. Renesas developed a test 32-megabit (Mbit) chip with an embedded MRAM memory cell array that achieves 5.9-nanosecond (ns) random read access at a maximum junction temperature of 150°C, and a write throughput of 5.8-megabyte-per-second (MB/s).

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32Mb MRAM by Renesas, macro photo

To achieve this performance, Renesas developed two technologies. The first is a fast read technology employing high-precision sense amplifier circuit, utilizing capacitive coupling. The second is a fast write technology, with simultaneous write bit number optimization and shortened mode transition time.

Read the full story Posted: Jun 18,2022

Everspin reports its Q1 2022 financial results

Everspin Technologies announced its financial results for Q1 2022, with revenues of $14.3 million (up 39% from 2021) and a net income of $1.9 million (compared to a $0.5 million net loss in 2021).

Everspin Technologies chip photo

Everspin says its product backlog for the rest of 2022 is at an all-time high, as demand continues to outpace supply. The company continues to work with its foundry partners to increase production capacity, but it expects the supply chain constraints to tighten in H2 2022.

Read the full story Posted: May 12,2022

Everspin launches a new family of SPI interface MRAM products

Everspin Technologies launched a new family of SPI/QSPI/xSPI interface MRAM products. Everspin says that the new EMxxLX family offers the world's highest performance persistent memory with full read and write bandwidth of 400 Megabytes per second through the new JEDEC expanded Serial Peripheral Interface (xSPI) standard interface.

With densities ranging from 8Mbit up to 64Mbit, this family of products is targeted for use in industrial IoT and embedded systems applications. Everspin began sampling the new chips for customers, and the company expects to commence volume production in the second half of 2022.

Read the full story Posted: May 04,2022

Researchers demonstrate an ultra-fast and efficient laser-induced opto-MRAM device

Researchers from Eindhoven University of Technology (TU/e) and the Fert Beijing Institute of Beihang University have experimentally demonstrated a fully-functional picosecond opto-MRAM building block device, by integrating ultrafast photonics with spintronics.

The researchers used a femtosecond (fs) laser, which is the fastest stimuli commercially that enabled the device to be extremely fast - and also a thousand times more energy efficient compared to standard MRAM devices. The device is based on the femtosecond laser-induced all-optical switching (AOS) scheme in synthetic ferrimagnetic multilayers that was discovered by TU/e in 2017, integrating it with MRAM bit

Read the full story Posted: Apr 30,2022

ESEN adopts Avalanche's MRAM technology for flight safety computer products

MRAM developer Avalanche Technology announced that ESEN has designed Avalanche’s 16Mbit High Performance Serial P-SRAM devices into its high reliability flight safety computer products.

Avalanche pMTJ STT-MRAM P-SRAM Serial QSPI Evaluation Kit photo

Avalanche's 2nd-Gen P-SRAM evaluation kit

The MRAM memory will provide a highly reliable solution, and Avalanche says that its Gen-2 products were selected for their ease of use, instant write capability, practically unlimited endurance and data retention in harsh environmental conditions. Avalanche Technology says it is the only supplier of low voltage MRAM products at 16Mb density operating at 1.8V in a small form factor with a serial interface.

Read the full story Posted: Mar 20,2022