Here are some recent and popular news that you may find of interest:

• NETSOL launches stand-alone STT-MRAM, fabricated at Samsung's Foundry
• STT-MRAM developer Numem secured its Series A funding round
• Researchers say MnPd3 will enable a breakthrough in SOT-MRAM memory devices
• NXP and TSMC to offer 16 nm FinFET automotive embedded MRAM
• Everspin launches a new family of SPI interface MRAM products
• Everspin to build a new MRAM production line in Indiana
• Renesas develops 22-nm circuit technologies for embedded STT-MRAM
• Samsung first to demonstrate MRAM-based in-memory computing
• IBM to reveal the world's first 14nm STT-MRAM node
• ITRI and UCLA to co-develop VC-MRAM technologies
• Avalanche starts production of its 3rd-Gen 22nm MRAM devices
• Samsung improves its MRAM performance, to expand target applications
• TSMC shows its eMRAM technology roadmap
• Samsung is progressing towards 14 nm eMRAM

pMTJ STT-MRAM developer Avalanche Technology announced that it is providing its Space Grade Persistent SRAM (P-SRAM) STT-MRAM products for satellite-based storage systems developed by RAiTEK. 

RAiTEK has designed in a 16Mb device from Avalanche's Gen 2 Space Grade family to monitor data stream status, and a 1Gb Gen 3 Space Grade to support large configuration images for the onboard FPGA used in the drives, as part of their growing portfolio of data storage and processing solutions for the space industry.

High-performance STT-MRAM developer Numem announced that it has secured a Series A funding round, with investments from Cambium Capital and Doorga Capital. The company did not detail the investment amount.

In 2020, Numem announced that it has been selected for a NASA AI project, for which the company will supply its Numem NuRAM MRAM-based Memory.

Researchers from the Tokyo Institute of Technology have successfully demonstrated fast p-MTJ switching (1 ns, compared to current switching that is >10 ns). "The researchers achieved this using the topological insulator BiSb as the SOT layer, and say the device offers a current density about 20 times smaller than typical.

The researchers say that this technology can be applied to develop p-MTJs for SOT-MRAM that will offer ultrafast operations and ultra low power consumption, while also offering higher reliability. This follows earlier work by the same group on BiSb p-MTJs.

NETSOL released new 1Mb to 32Mb serial and 1Mb to 64Mb parallel STT-MRAM products through the Samsung Electronics Foundry.

NETSOL MRAM products are ideal for applications that need to store and retrieve data quickly and frequently due to STT-MRAM's virtually unlimited endurance and fast-write features. Ideal for code storage, data logging, backup and working memory in industrial devices/ equipment, it can replace NOR Flash, FeRAM, low-power SRAM and nvSRAM products, among others with unmatched performance and non-volatile features.

NETSOL STT-MRAM products provide fast read and write features without a delay in recording and storing data even when the system is powered off, and is cost-effective by enabling compact systems without the need for batteries or capacitors based on its non-volatile features.

Researchers from the Hebrew University of Jerusalem in Israel have made a recent discovery that could change the face of spintronics research - the most important equation used to describe magnetization dynamics, namely the Landau-Lifshitz-Gilbert (LLG) equation, also applies to the optical domain. 

A spintronics device developed by Professor Capua's lab

The new discovery has relevant applications in optical magnetic recording, namely in optically-controlled MRAM technology. Manipulation of the magnetization order parameter on optical timescales is key for ultrafast spintronics, which allows for faster, energy-efficient optically-controlled MRAM technology.

NXP Semiconductors announced a collaboration with TSMC to offer automotive embedded MRAM, in TSMC's 16 nm FinFET technology. NXP says that as automakers transition to software-defined vehicles, they need to support multiple generations of software upgrades on a single hardware platform. Bringing together NXP’s high-performance S32 automotive processors with fast and highly reliable next-generation MRAM in 16 nm FinFET technology provides the ideal hardware platform for this transition.

The new MRAM memory will be able to udpate 20MB of code in ~3 seconds compared to flash memories that take about 1 minute, which will minimize the downtime associated with software updates. MRAM also provides a highly reliable technology for automotive mission profiles by offering up to one million update cycles, a level of endurance 10x greater than flash and other emerging memory technologies.

Researchers from the School of Engineering at Stanford University discovered that a metallic compound called manganese palladium three MnPd3 is a promising material to build SOT-MRAM memory devices. 

The researchers say that the new material enables a breakthrough in SOT-MRAM device performance, as it is the first material that generates spin in the z-direction, rather than the y-direction as in most materials, which is a property needed in high-performance SOT-MRAM. In fact MnPd3 is able to generate spins in any orientation because its internal structure lacks the kind of crystal symmetry that would force all of the electrons into a particular orientation.