US-based Rambus was established in 1990 as a technology licensing company, famous for its IP on DDR-SDRAM memory. Besides memory systems, the company is also developing security solutions, mobile media integration platforms, LED lighting products and more.
Established in 2011 in the US, Rangduru developed an MRAM memory structure called DX MRAM that uses a cell structure that is twice as dense as current MRAM structures.
Rangduru operates in a fabless model and develops both discrete MRAM chips and embedded MRAM technologies.
Renesas, established in 2003 by Mitsubishi and Hitachi, develops and manufactures system LSIs and memory products.
Samsung is a large Korean conglomerate focusing on electronics, displays (both LCDs and OLEDs) and semiconductors. Samsung is a leading memory producer and is researching several next-generation memory technologies, including RRAM and MRAM.
Seagate is one of the world's leading Hard-Disk makers.
In 2008 Seagate's CEO said that the company is developing a next-generation memory technology - something similar to MRAM or Phase-Change memory.
Silicon Laude (pronounced "Laudee") was a privately held, fabless semiconductor company headquartered in Austin, Texas. Formed in 2005, Silicon Laude was primarily a service-oriented company specializing in low-to-medium volume and quick-turn production of standard and customized microcontroller IC designs for select customers.
Siltene was a start-up company that was spun-off the University Paris Sud to develop proprietary back end solution to treat magnetic materials for enhancing their performances, reducing manufacturing costs and improving yield.
Siltene technology could be used for both HDD and MRAM applications.
Singulus technologies (ETR:SNG) is a German-based company that focuses on manufacturing equipment for optical discs. Singulus' products range from mastering and injection molding to replication lines.
Spin Memory (previously Spin Transfer Technologies), established by established by NYU and Allied Minds, is developing STT-MRAM devices based on its Orthogonal Spin Transfer MRAM (OST-MRAM) technology.
In November 2018 Spin Memory licensed its Endurance Engine MRAM technology to Arm. In 2016 Spin Memory produced 20nm OST-MRAM MTJs, and said it is preparing to start delivering samples to select customers. In 2015 the company raised $70 million (in addition to $36 million raised in 2012) and in November 2018 the company announced its $52 million Series B funding round.
Spin-Ion Technologies, established in 2017 as a spin-off from CNRS, developed a unique patented process that increases the performance of MRAM magnetic layers - by improving the homogeneity, increasing the magnetic performance and increasing yields.
Spingate was a US-based fabless company that focused on perpendicular MRAM development.
In November 2009 we have talked to Dr. Alex Shukh, Spingate's co-founder, CTO and CEO, and he explains Spingate's technology and business plans a little more. In March 2011 the company sent us another update on their technology achievements. In November 2012 the company announced a new invention: multi-bit Spin-MRAM which has great potential.
Tegal Corporation was involved in plasma etch and deposition systems that enable the production of IC memory and related microelectronics devices.
Tegal supplied etch solutions to makers of advanced "non-volatile" ferroelectric (FeRAM) and magnetic (MRAM) devices. In 2010, the company sold its etch business to SPTS.
Tokyo Electron (TEL), established in 1963 is based in Japan and is a global supplier of semiconductor and FPD production equipment worldwide. Product lines include coater/developers, thermal processing systems, plasma etch systems, CVD systems, surface preparation systems, and test systems.
Toshiba is a diversified manufacturer and marketer of advanced electronic and electrical products. Toshiba has an active MRAM research program, focusing on Perpendicular STT-RAM.
Toshiba reported several advances, and in 2015 presented a highly-efficient test chip.