Imec

Researchers from Imec fabricated spin-orbit torque MRAM (SOT-MRAM) devices on 300mm wafers using CMOS compatible processes. The researchers say that these devices offer unlimited endurance, fast switching speeds and low power consumption.

Imec says that SOT-MRAM can overcome the limitation of spin-transfer torque in MRAM memories, but up until now it was only demonstrated in a lab. The core of the SOT-MRAM is a magnetic tunnel junction in which a thin dielectric layer is sandwiched between a magnetic fixed layer and a magnetic free layer. SOT-MRAM devices feature switching of the free magnetic layer done by injecting an in-plane current in an adjacent SOT layer, unlike STT-MRAM where the current is injected perpendicularly into the magnetic tunnel junction and the read and write operation is performed through the same path.

GlobalFoundries announced it is joining Qualcomm and Imec (and other companies) in their joint development effort to advance STT-MRAM technology. GlobalFoundries is the first IC maker to join imec's R&D program on emerging memory technologies. Imec says that they now have the complete infrastructure necessary for STT-MRAM R&D.

Imec and the other members aim to explore the potential of STT-MRAM, including performance below 1ns and scalability beyond 10nm for embedded and standalone applications.

Imec and Tokyo Electron (TEL) have decided to extend their current collaboration to include joint R&D on STT-MRAM, which will take place within imec’s research and development program on emerging memory technologies.

TEL installed a Tactras etch tool at imec's 300mm clean room. This enables imec and TEL to jointly develop the patterning processes for high-density STT-MRAM technology. The Tactras is designed for in-situ cluster patterning of the Magnetic Tunnel Junction (MTJ) stack, which is key for advanced memory technology nodes.

Belgian's research center Imec announced today that it will collaborate with Canon Anelva on STT-MRAM research and development. This collaboration will be part of imec's R&D program on advanced emerging memory technologies and aims to explore the full technology potential of STT-MRAM including performance beyond 1ns and scalability beyond 10 nm for embedded & stand alone applications.

Canon Anelva already installed a deposition tool in imec’s state-of-the-art 300-mm clean room. Combined with imec’s advanced litho-cluster and its material engineering capabilities, imec’s industrial partners now have access to a complete 300-mm STT-MRAM-dedicated processing capability.