Spin Memory (previously Spin Transfer Technologies), established by established by NYU and Allied Minds, is developing STT-MRAM devices based on its Orthogonal Spin Transfer MRAM (OST-MRAM) technology.
In November 2018 Spin Memory licensed its Endurance Engine MRAM technology to Arm. In 2016 Spin Memory produced 20nm OST-MRAM MTJs, and said it is preparing to start delivering samples to select customers. In 2015 the company raised $70 million (in addition to $36 million raised in 2012) and in November 2018 the company announced its $52 million Series B funding round.
Back in October 2008 we have interviewed Vincent Chun, who was then the executive in charge.
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