Synopsys announced that it is set to add support for embedded MRAM designs to its DesignWare STAR Memory System solution. The new solution will offer new eMRAM memory built-in self-test (BIST), repair, and diagnostic capabilities, initially for GlobalFoundries eMRAM on its 22FDX process.

The STAR Memory System's new algorithms target failure mechanisms of embedded MRAM and other types of non-volatile memories during production and in-field test. Support for multiple background patterns and complex addressing modes accelerates automated test equipment (ATE) vector generation, resulting in the highest test coverage for eMRAM, maximized manufacturing yield, and improved system-on-chip (SoC) reliability.

Intel says it will present a new paper detailing its MRAM research at the International Electron Devices Meeting (IEDM) in early December 2018. This is the first time we hear of any MRAM R&D at Intel which is great news, even if it just a research paper.

Intel has apparently successfully integrated embedded MRAM into the company's 22nm FinFET CMOS technology on full 300mm wafers. The magnetic tunnel junction-based memory cells are built from dual MgO magnetic tunnel junctions (MTJs) separated by a CoFeB-based layer in a 1 transistor-1 resistor (1T-1R) configuration in the interconnect stack. Intel has manufactured a 7.2Mbit array with reported data retention figures in excess of 10 years and write endurance of greater than 10^6 cycles.

pMTJ STT-MRAM developer Avalanche Technology announced that it has entered into a joint development and production agreement with Taiwan's United Microelectronics Corporation (UMC), a global semiconductor foundry.

UMC will provide embedded non-volatile STT-MRAM blocks based on UMC's 28nm CMOS manufacturing process, which will enable customers to integrate low latency, very high performance and low power embedded MRAM memory blocks into MCUs and SoCs, targeting the Internet of Things, wearable, consumer, industrial and automotive electronics markets.

ARM announced that it is developing a compiler for embedded MRAM (eMRAM) for use with Samsung Foundry's 28nm fully-depleted silicon-on-insulator (FDSOI) integrated circuit manufacturing process. ARM completed its first eMARM IP test chip tape out, and the compiler will be available for use by lead partners in 4Q18.

ARM says that the eMRAM compiler can generate instances to replace Flash, EEPROM and slow SRAM/data buffer memories with a single non-volatile fast memory – particularly suited for cost- and power-sensitive IoT applications. The eMRAM can be integrated with as few as three additional masks, while embedded flash requires greater than 12 additional masks at 40nm and below.

eVaderis announced that it is collaborating with Mentor to build advanced design solutions for embedded MRAM (eMRAM) technologies, based on Mentor's Analog FastSPICE (AFS) platform.

Earlier this month GlobalFoundries and eVaderis announced that the two companies are co-developing an ultra-low power microcontroller (MCU) reference design using GF’s embedded MRAM on the 22nm FD-SOI (22FDX) platform.

GlobalFoundries and eVaderis announced that the two companies are co-developing an ultra-low power microcontroller (MCU) reference design using GF’s embedded MRAM on the 22nm FD-SOI (22FDX) platform.

The two companies say that this new reference design will bring together the superior reliability and versatility of GF’s 22FDX eMRAM and eVaderis’ ultra-low power IP. The new platform will support a broad set of applications such as battery-powered IoT products, consumer and industrial microcontrollers, and automotive controllers.

Veeco developed an Ion Beam Etch system for MRAM production, and during the company's Q3 2017 conference call it updated on the new system.

Veeco says that its Ion Beam technology is well suited for etching the multilayer magnetic stack used in MRAM chips. Veeco already placed systems at multiple customers and expect high volume manufacturing to start next year for embedded memory applications.

Digitimes reports that Samsung Foundry will soon start mass producing MRAM chips using Samsung's 28nm fully depleted silicon-on-insulator (FD-SOI) process technology.

Digitimes says that Samsung has collaborated with NXP on this project. Samsung has completed the tape-out of its embededd MRAM which will be first applied to NXP's new low-power i.MX-series chipset targeted at automotive, multimedia and display panel applications.

In September 2016 Everspin announced that its perpendicular (pMTJ) STT-MRAM memory is going to be deployed by Global Foundries as an embedded 22nm memory (as part of the 22FDX platform). Today GlobalFoundries (GF) announced that eMRAM technology is now available for the 22FDX platform.

GF says that its eMRAM technology is the industry's most advanced embedded memory solution, and it provides high performance and superior reliability for broad applications in consumer and industrial controllers, data centers, Internet of Things, and automotive.

GlobalFoundries has plans to deploy Everspin's perpendicular (pMTJ) STT-MRAM as an embedded 22nm memory - as part of GF's 22FDX platform. GlobalFoundries has released a technical paper that details the eMRAM ability to retain data at high temperatures.

The eMRAM can retain data through solder reflow at 260 degrees Celsius, and for more than 10 years at 125 degrees Celsius, plus read/write with outstanding endurance at 125 degrees Celsius. GlobalFoundries says that this will enable eMRAM to be used for general purpose MCUs and automotive SOCs.