Honeywell develops non-volatile MRAM for strategic space applications

Honeywell has developed a one-million bit non volatile static memory component for strategic space electronics applications (see related story). Built with Honeywell's radiation-hardened, silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology, and combined with magnetic thin films, the new memory component provides high reliability for low-voltage systems operating in radiation environments.

The magnetic RAM runs from a 3.3-volt power supply and has high reliability, enabling it to operate through the natural radiation found in space. It offers nearly unlimited read/write cycles (>1e15) and uses Honeywell's 150-nanometer SOI CMOS technology as well as a unique set of wafer processes developed at the company's "Trusted Foundry" in Plymouth, Minn.

Posted: Mar 17,2007 by Ron Mertens