Crocus Nano Electronics (CNE) announced successful test results for its 90 nm pMTJ STT-MRAM technology. The company says it has developed unique materials that are able to deliver high data retention, tolerance to external magnetic fields and low switching currents. The company expects to produce its first engineering samples in later in 2018.

CNE also reports that it complete the design of its STT-MRAM test chip for further technology improvement in cooperation with eVaderis. Together with eVaderis, CNE created a "universal memory chip" able to serve as a platform for technology development through a wide range of MTJ sizes, currents and voltages ranges.

eVaderis announced that it has successfully demonstrated a fully functioning design platform through an ultra-low-power microcontroller (MCU) in Beyond Semiconductor’s BA2X product line. eVaderis says that this new MCU is ideally suited for battery-powered applications in IoT and wearable electronics.

The new design uses imec's perpendicular, STT-MRAM technology that enables the new MCU to achieve non-volatile operation with high-speed read/write and low voltage. The MCU includes 3 Mb of on-chip STT-MRAM memory.

Everspin reports its financial results for Q3 2017. Revenues reached a record $9 million (up from $7.2 million in Q3 2016 and up only slightly from last quarter), while the net loss grew to $5.4 million (up from $1.4 million in Q3 2016).

At the end of the quarter, Everspin had $17.8 million in cash and equivalents (down from $21.2 million at the end of Q2 2017). Everspin expects revenue in Q4 2017 to be in the range of $9.9 million to $10.3 million.

ActualTech Media RoadCast posted an interview with Spin Transfer Technologies (STT) CEO, Tom Sparkman, who explains the company's history, technology and business:

ActualTech Media also posted an interview with STT's VP of product, Andy walker, who gives an MRAM technology primer:

Spin Transfer Technologies (STT) announced that it has signed an agreement with Tokyo Electron (TEL) to collaborate on the development of next-generation SRAM and DRAM-class STT-MRAM devices.

Spin Transfer Technologies says that the combination of its STT-MRAM technology with TEL’s advanced PVD MRAM deposition tool will allow the companies to quickly develop processes for the highest density and endurance devices.

The EU launched a new project called GREAT H2020 moderated by the CEA-Spintec laboratory that plans to co-integrate multiple functions like sensors, RF receivers and logic/memory together within CMOS thanks to a single baseline technology in the same System on Chip.

One of the project’s final objectives is to develop a system-level simulation and design of a representative IoT platform, integrating this technology. To achieve it, a unique exploration flow is proposed: MAGPIE. MAGPIE stands for Manycore Architecture enerGy and Performance evaluation Environment and has been jointly developed and funded through GREAT and the CONTINUUM ANR French project.

Spin Transfer Technologies announced that it has raised $22.8 million via a convertible bridge facility. STT says that this will help the company get ready to complete its Series B funding round, targeting strategic investors and planned to conclude by end of Q1 2018.

In January 2017 STT announced that it has started to deliver fully functional ST-MRAM samples to customers in North America and Asia. The sample devices are based on the company's Orthogonal Spin Transfer Magneto-Resistive Random Access Memory technology (OST-MRAM), and use 80nm perpendicular magnetic tunnel junctions (MTJs)., the latest generation of MRAM technology.

Seagate demonstrate several new prototypes and technologies at Flash Memory Summit last week, and one of these is the new Nytron 5000B SSD drive that is a high-performance boot drive. The new device has 256GB of 3D MLC NAND and makes use of 1258MB of Everspin's STT-MRAM in addition to a "normal" DRAM cache.

Seagate says that the MRAM can be used as either a write cache for user data or it can be exposed directly as a separate storage namespace for explicit tiered storage. Seagate said that this is currently just a test-platform prototype - and not a preview of an upcoming product.

Everspin announced that it started sampling 1Gb STT-MRAM chips. Everspin's new chips provide a high-endurance, persistant memory with a DDR4-compatible interface. Everspin sees these chips being used in storage devices to provide protection against power loss without the use of supercapacitors or batteries.

Everspin's new pMTJ 1Gb chips provide 4 times the capacity of the company's current 256Mb DDR3 chips. The 1 Gb MRAM is produced in 28nm CMOS on 300mm wafers in partnership with GlobalFoundries.

GlobalFoundries has plans to deploy Everspin's perpendicular (pMTJ) STT-MRAM as an embedded 22nm memory - as part of GF's 22FDX platform. GlobalFoundries has released a technical paper that details the eMRAM ability to retain data at high temperatures.

The eMRAM can retain data through solder reflow at 260 degrees Celsius, and for more than 10 years at 125 degrees Celsius, plus read/write with outstanding endurance at 125 degrees Celsius. GlobalFoundries says that this will enable eMRAM to be used for general purpose MCUs and automotive SOCs.