Back in June 2010 We learned that Qualcomm is developing MRAM technologies. Now Qualcomm's QTI Advanced Memory Team posted a job opening that details a mobile STT-MRAM lead technologist - that will lead the development of next-generation mobile SOC memory subsystems that integrate Perpendicular STT-MRAM.
Last week Everspin announced their first ST-MRAM product, and today we found this nice video showing a tour of Everspin's booth at LSI AIS 2012 and explaining the company's technology and products. The explanation is given by Joseph O'hare, Everspin's director of product marketing:
Spingate announced that they invented a multi-bit Spin-RAM, which can store two bits per MTJ. It uses magnetic materials with perpendicular anisotropy and has a cell size of 4F2, which is the smallest currently reported in the industry. This kind of memory can provide a density of about 160 Gbits/in2 (0.257 Gbit/mm2) at 45 nm. They say their design has excellent thermal stability, and so can scale down to 10 nm.
Spingate's Spin-RAM uses the company's proprietary hybrid write mechanism based on a simultaneous application of a spin-polarized current and a bias magnetic field. The hybrid write mechanism provides the Spin RAM with a high switching speed (about 1 ns or less), low density of the spin-polarized current (about 106 A/cm2 or less), excellent endurance (about 1015 or above) and error rate. Spingate says that it can be smoothly arranged in a 3D architecture (without additional layers or selection transistors), and 1 Tbits/in2 can be achieved at 25 nm (with only two layers of MTJ) or at 18 nm (in a 2D architecture).
Spin Transfer Technologies (STT) announced that Barry Hoberman has been appointed as CEO and Chairman of the board. Barry was Crocus Technology's chief marketing officer, and we interviewed him in January.
Back in February STT announced that they raised $36 million to accelerate the development of its patented orthogonal spin transfer magneto resistive random access memory technology (OST-MRAM) - by scaling operation, hiring new employees and purchasing equipment. Back in October 2008 we have interviewed Vincent Chun, who was then the executive in charge at STT.
A couple of days ago we reported that Everspin will start sampling ST-MRAM chips soon, and today we got official word from Everspin that they are now sampling the first ST-MRAM chip. The EMD3D064M is a 64Mb DDR3 device, and select customers are already evaluation samples. Everspin is currently targeting the enterprise SSD market, to complement flash memory.
Everspin is manufacturing the ST-MRAM chips on its 200mm production line in Chandler, Arizona. The company is working to establish 300 mm MRAM tools and additional fab capacity. The company expects the EMD3D064M to become available in 2013.
Imec and Tokyo Electron (TEL) have decided to extend their current collaboration to include joint R&D on STT-MRAM, which will take place within imecâs research and development program on emerging memory technologies.
TEL installed a Tactras etch tool at imec's 300mm clean room. This enables imec and TEL to jointly develop the patterning processes for high-density STT-MRAM technology. The Tactras is designed for in-situ cluster patterning of the Magnetic Tunnel Junction (MTJ) stack, which is key for advanced memory technology nodes.
Belgian's research center Imec announced today that it will collaborate with Canon Anelva on STT-MRAM research and development. This collaboration will be part of imec's R&D program on advanced emerging memory technologies and aims to explore the full technology potential of STT-MRAM including performance beyond 1ns and scalability beyond 10 nm for embedded & stand alone applications.
Canon Anelva already installed a deposition tool in imecâs state-of-the-art 300-mm clean room. Combined with imecâs advanced litho-cluster and its material engineering capabilities, imecâs industrial partners now have access to a complete 300-mm STT-MRAM-dedicated processing capability.
Update: this is now official, Everspin's EMD3D064M is the world's first ST-MRAM chip, will ship in 2013
We just got word that Everspin will soon announce their first ST-MRAM product. From what we hear, the 64-Mbit chip is already sampling and clients are already evaluation it. Everspin is targeting the enterprise SSD market. Everspin's ST-MRAM chips will feature non-volatility, low latency and increased reliability.
If this is true, this is a very exciting moment for the MRAM industry, as many believe that Spin-Torque (ST-MRAM) technology will finally enable MRAM to reach high densities, lower prices and mass market adoption.
Researchers from the University of Virginia have developed a novel technology using MRAM for short- and long- term storage solutions. This device uses a spinning torque current to change the magnetization of each memory domain to achieve higher memory bit density and faster writing speeds. These memory domains are allocated along the memory line and a multi-ferroic element near each domain provides magnetization stability when a voltage is not being applied.
To write the individual bit, a current is passed through the memory line and the interaction of the multi-ferroic element and the free layer determines either â1â anti-parallel polarity between layers (high resistance) or â0â parallel polarity between layers (low resistance). The magnetization of the memory domains is then changed by reducing the exchange bias between the memory line and the multi-ferroic element (see figure above). Memory domains are independently writable and only require a single current input to store data. This significantly reduces energy consumption and time for the writing cycle, thereby improving both cost and performance efficiency.
Tokyo Electron (TEL) has acquired Magnetic Solutions (MSL). MSL develops, manufactures and sells magnetic annealing systems. Magnetic annealing is used during the MRAM manufacturing process to determine device performance. TEL hopes that by combining MSL's years of expertise in magnetic field annealing and its own productivity and miniaturization technologies for thermal processing systems, it will be possible to provide optimal systems for MRAM mass production.