MRAM production

Avalanche Technology announced production of its 3rd-Gen 22nm MRAM devices

pMTJ STT-MRAM developer Avalanche Technology announced that its latest 3rd-Gen MRAM devices are now in production at its foundry partner, United Microelectronics Corporation (UMC). The company says that its new MRAM chips offer significant density, endurance, reliability and power benefits over existing non-volatile solutions.

Avalanche Technology SPnvSRAM G2 MRAM evaluation board photo

Avalanche's new Parallel x 32 series is offered as a standard product in various density options and has asynchronous SRAM-compatible read/write timings. Avalanche also says that it will soon start developing 16Gb MRAM chips.

Read the full story Posted: Sep 15,2022

Everspin announces a new 128Mbit xSPI STT-MRAM product

A few months ago, Everspin Technologies launched a new family of SPI/QSPI/xSPI interface MRAM products that offer the world's highest performance persistent memory with full read and write bandwidth of 400 Megabytes per second through the new JEDEC expanded Serial Peripheral Interface (xSPI) standard interface. The EMxxLX family was launched with densities ranging from 8 Mbit to 64 Mbit.

Everspin Technologies chip photo

Today Everspin announced a new xSPI MRAM device, the EM128LX, that expands the product line to 128Mbit.  Everspin says that the combination of increased density with up to 233 megabytes/second full read and write bandwidth means that system designers now have the option of merging code and data memory on the same device, reducing cost, power, and area.

Read the full story Posted: Aug 02,2022

Samsung improves its MRAM performance, will expand its target applications

In March 2019 Samsung Electronics announced that it has started to mass produce its first embedded MRAM, made using the company's 28nm FD-SOI process. The company now announced that it managed to improve the MTJ function of its MRAM, which makes it suitable for more applications.

Samsung eMRAM image

Samsung will now expand the application of its eMRAM solutions to more markets - specifically the automotive, wearable, graphic memory, low level cache, internet of things and edge artificial intelligence markets.

Read the full story Posted: Feb 05,2021

Avalanche Technology's Serial P-SRAM STT-MRAM memory devices are now shipping

pMTJ STT-MRAM developer Avalanche Technology announced that its new industrial-grade Serial (SPI) P-SRAM (Persistent SRAM) memory devices are now available. The Serial (SPI) memory devices are designed to be drop-in replacements to Cypress F-RAM and Everspin Toggle MRAM memory products.

Avalanche pMTJ STT-MRAM P-SRAM Serial QSPI Evaluation Kit photo

The Series (SPI) series supports up to 50MHz clock rate in 1Mb and 4Mb density options, in two packages - 8-pin SOIC and 8-pin WSON. These use Avalanche's 40nm pMTJ STT-MRAM chips.

Read the full story Posted: Sep 29,2020

Hprobe says first MRAM tester qualified by a major foundry in Taiwan for production use

Hprobe, a developer of testing equipment for magnetic devices, says its first Hprobe MRAM tester was qualified for use by a major Taiwan-based foundry for production use. Hprobe says that this is an important milestone and the company believes it is just the beginning of the global MRAM production ramp up.

Hprobe recently announced that it developed a new technology for ultra-fast (

Read the full story Posted: Sep 24,2019

Analysts expect MRAM revenues to grow 170X by 2029 to reach $4 billion

A new market report by Objective Analysis and Coughlin Associates expects that stand-alone MRAM and STT-MRAM revenues will grow 170X from 2018 to 2029, reaching almost $4 billion in revenues. The growth of next-generation memory technologies will be mainly driven by displacing today’s less efficient memory technologies like NOR flash and SRAM.

MRAM capacity shipments forecast (2017-2029, Coughlin)The analysts expect many memory technologies, including DRAM, 3D Xpoint and NAND to grow in the coming years, but the most stellar growth will be of MRAM memories. Shipments in terms of capacity are expected to grow from around 0.1 Petabytes in 2019 to almost 1 million Petabytes by 2029.

Read the full story Posted: Jul 09,2019

Everspin starts pilot production of its 28nm 1-Gb STT-MRAM chips

Everspin Technologies announced that it completed the development activity and entered the pilot production phase of its 28 nm 1-Gigabit (Gb) STT-MRAM chips. Everspin targets the enterprise infrastructure and data center markets which can utilize its MRAM technology to increase reliability and performance.

Everspin 1-Gb chip family (EMD4E001G) includes both 8-bit and 16-bit DDR4 compatible (ST-DDR4) interface versions of the device and are available in a JEDEC-compliant BGA package.

Read the full story Posted: Jun 12,2019

Samsung starts shipping 28nm embedded MRAM memory

Samsung announced that it has started to mass produce its first embedded MRAM, made using the company's 28nm FD-SOI process. Samsung says that its eMRAM memory module offers higher performance and endurance when compared to eFlash, and can be integrated into existing chips.

Samsung eMRAM image

Samsung details that its eMRAM is 1,000 times faster than its eFlash memory, and it does not require an erase cycle before writing data (unlike Flash memory). The voltage used is also lower - and in total eMRAM consumes 1/400 the energy compared to eFlash for the writing process. Samsung's MRAM capacity, though, is lower than its 3D Xpoint, DRAM and NAND flash.

Read the full story Posted: Mar 08,2019