pMTJ STT-MRAM developer Avalanche Technology announced plans to start producing some of its MRAM devices at LA Semiconductor, a US-based mixed-signal foundry at Pocatello ID (a former onsemi site) with its 180 nm mixed signal and power process capabilities.

Avalanche Technology says that by moving its production  to the US, it shows its commitment to the local aerospace and defense community with an assured source of domestic manufacturing.

Earlier this year, Everspin Technologies announced its latest STT-MRAM devices, the EMxxLX xSPI serial interface memory. The company now announced that the EMxxLX devices are now commercially available.

The EMxxLX family is the only memory device offering density up to 64Mb, octal interface with 400MB/s bandwidth, and compatibility with the xSPI standard. The EMxxLX features 1000X faster write times compared to NOR flash.

Disclosure: the author of this post holds shares at Everspin

pMTJ STT-MRAM developer Avalanche Technology announced that its latest 3rd-Gen MRAM devices are now in production at its foundry partner, United Microelectronics Corporation (UMC). The company says that its new MRAM chips offer significant density, endurance, reliability and power benefits over existing non-volatile solutions.

Avalanche's new Parallel x 32 series is offered as a standard product in various density options and has asynchronous SRAM-compatible read/write timings. Avalanche also says that it will soon start developing 16Gb MRAM chips.

A few months ago, Everspin Technologies launched a new family of SPI/QSPI/xSPI interface MRAM products that offer the world's highest performance persistent memory with full read and write bandwidth of 400 Megabytes per second through the new JEDEC expanded Serial Peripheral Interface (xSPI) standard interface. The EMxxLX family was launched with densities ranging from 8 Mbit to 64 Mbit.

Today Everspin announced a new xSPI MRAM device, the EM128LX, that expands the product line to 128Mbit.  Everspin says that the combination of increased density with up to 233 megabytes/second full read and write bandwidth means that system designers now have the option of merging code and data memory on the same device, reducing cost, power, and area.

In March 2019 Samsung Electronics announced that it has started to mass produce its first embedded MRAM, made using the company's 28nm FD-SOI process. The company now announced that it managed to improve the MTJ function of its MRAM, which makes it suitable for more applications.

Samsung will now expand the application of its eMRAM solutions to more markets - specifically the automotive, wearable, graphic memory, low level cache, internet of things and edge artificial intelligence markets.

pMTJ STT-MRAM developer Avalanche Technology announced that its new industrial-grade Serial (SPI) P-SRAM (Persistent SRAM) memory devices are now available. The Serial (SPI) memory devices are designed to be drop-in replacements to Cypress F-RAM and Everspin Toggle MRAM memory products.

The Series (SPI) series supports up to 50MHz clock rate in 1Mb and 4Mb density options, in two packages - 8-pin SOIC and 8-pin WSON. These use Avalanche's 40nm pMTJ STT-MRAM chips.

TSMC announced, during the company's virtual European technology symposium, that it is developing MRAM technologies for its 16nm FinFET platform. The company expects to offer flash-like configuration risk production starting in 4Q21 and RAM-like risk production scheduled for 4Q22.

The company also expects to "explore smaller geometries" for its MRAM (and RRAM) solutions. TSMC started offering 22nm MRAM in 2018.

Everspin Technologies announced that It is has received the qualification notice from a major OEM for its 1Gb STT-MRAM device. The company is now qualified to start making production shipments of its new chip for its first customer.

Everspin further announced that since it started MRAM production, it shipped over 120 Toggle MRAM and STT-MRAM devices.

Hprobe, a developer of testing equipment for magnetic devices, says its first Hprobe MRAM tester was qualified for use by a major Taiwan-based foundry for production use. Hprobe says that this is an important milestone and the company believes it is just the beginning of the global MRAM production ramp up.

Hprobe recently announced that it developed a new technology for ultra-fast (

A new market report by Objective Analysis and Coughlin Associates expects that stand-alone MRAM and STT-MRAM revenues will grow 170X from 2018 to 2029, reaching almost $4 billion in revenues. The growth of next-generation memory technologies will be mainly driven by displacing today’s less efficient memory technologies like NOR flash and SRAM.

The analysts expect many memory technologies, including DRAM, 3D Xpoint and NAND to grow in the coming years, but the most stellar growth will be of MRAM memories. Shipments in terms of capacity are expected to grow from around 0.1 Petabytes in 2019 to almost 1 million Petabytes by 2029.