Researchers from Taiwan's National Tsing Hua University (NTHU)managed to use a spin current to manipulate the exchange bias in Spin-Orbit Torque memory (SOT-MRAM). The researchers say that this has been a long-time challenge in the field.
To achieve this, the researchers added a platinum layer under the ferromagnetic and antiferromagnetic layers of the MRAM device. The researchers patented this technique before publishing their findings.
Posted: Mar 17,2019 by Ron Mertens