Researchers from the Tokyo Institute of Technology have successfully demonstrated fast p-MTJ switching (1 ns, compared to current switching that is >10 ns). "The researchers achieved this using the topological insulator BiSb as the SOT layer, and say the device offers a current density about 20 times smaller than typical.
The researchers say that this technology can be applied to develop p-MTJs for SOT-MRAM that will offer ultrafast operations and ultra low power consumption, while also offering higher reliability. This follows earlier work by the same group on BiSb p-MTJs.
Comments
Please provide hard numbers…
As possible, it would be much, much better to give hard numbers when talking about speed, power consumption, endurance (cycle life)… rather saying « fast », « low-power »,…
For example, it would be better to say that read energy per bit is 100 femtojoules/bit, and write energy per bit is 200 femtojoules/bit with 10E12 endurance… (the numbers are fictious…)
You can find out more hard…
You can find out more hard numbers at the original paper - https://doi.org/10.1063/5.0084927