Taiwan's Industrial Technology Research Institute (ITRI) announced two new MRAM collaborations. The first one is with Taiwan's TSMC, for the development of SOT-MRAM array chips. The second collaboration is with National Yang Ming Chiao Tung University (NYCU) to develop magnetic memory technology that can perform across a wide operating temperature range of nearly 400 degrees Celsius.
Together with TSMC, ITRI is developing low-voltage and current SOT-MRAM, that features high write efficiecny and low write voltage. ITRI says that its SOT-MRAM achieves a writing speed of 0.4 nanoseconds and a high endurance of 7 trillion reads and writes. The memory also offers a data storage lifespan of over 10 years.
Together with NYCU, ITRI has worked to develop high-efficiency operating technology for MRAM and recently presented the R&D results. The newly developed STT-MRAM adopts ultrathin composite films and magnesium spacers to boost writing speed, reduce latency, minimize writing current, and improve endurance. The multi-functional magnetic memory has optimal data access performance and stability across a wide operating temperature range between -269 and 127 degrees Celsius.
Earlier this year ITRI announced a joint project with UCLA to develop VC-MRAM technologies.