NEC announced that they have developed the world's first STT-MRAM with current-induced domain wall motion using perpendicular magnetic anisotropy material. Perpendicular magnetic anisotropy enables a cell to carry out the current-induced domain wall motion writing method using spin torque at a low current, which leads to easy scaling down of cell size and creates suitable conditions for next generation system LSI.
The newly developed current-induced domain wall motion writing method, using spin torque and perpendicular magnetization material, is capable of reducing current while writing for a scaled down cell beyond the 55 nanometer process.
NEC says they will continue MRAM development. Japan's NEDO is partially funding this research.