pMTJ

Researchers demonstrate fast BiSb p-MTJ switching, to enable fast and low-power SOT-MRAM devices

Researchers from the Tokyo Institute of Technology have successfully demonstrated fast p-MTJ switching (1 ns, compared to current switching that is >10 ns). "The researchers achieved this using the topological insulator BiSb as the SOT layer, and say the device offers a current density about 20 times smaller than typical.

The researchers say that this technology can be applied to develop p-MTJs for SOT-MRAM that will offer ultrafast operations and ultra low power consumption, while also offering higher reliability. This follows earlier work by the same group on BiSb p-MTJs.

Read the full story Posted: Sep 02,2023

Avalanche to supply its Gen-2 space-grade MRAM to ASP's satellite power applications

pMTJ STT-MRAM developer Avalanche Technology announced that it is providing its disruptive Space Grade Persistent SRAM (P-SRAM) products for satellite power applications developed by Advanced Space Power Equipment GmbH (ASP). 

Avalanche Technology MRAM chips render

ASP has designed in a 16Mb device from Avalanche’s Gen 2 Space Grade P-SRAM family into its next-generation Power Conditioning & Distribution Unit (PCDU) within its satellite platform product line.

Read the full story Posted: Jun 02,2023

Researchers develop sub-volt nanoscale perpendicular VC-MRAM devices

A research team from Northwestern Engineering, led by Prof. Pedram Khalili developed highly efficiency nanoscale perpendicular MRAM (pMTJ) devices that use sub-volt switching. The researcher say that this new technology can allow scaling MRAM to very high densities.

The new devices are referred to as voltage-controlled MRAM (VCM), that does not rely on current like regular MRAM devices. Most VCM devices need high switching voltage (at least 2 volts), but by using a new material structure with significantly higher sensitivity of the magnetic properties to voltage, the researchers were able to operate at less than one volt.

Read the full story Posted: Nov 14,2022

Avalanche to start producing some of its MRAM chips at LA Semiconductor's US-based fab

pMTJ STT-MRAM developer Avalanche Technology announced plans to start producing some of its MRAM devices at LA Semiconductor, a US-based mixed-signal foundry at Pocatello ID (a former onsemi site) with its 180 nm mixed signal and power process capabilities.

Avalanche Technology says that by moving its production  to the US, it shows its commitment to the local aerospace and defense community with an assured source of domestic manufacturing.

Read the full story Posted: Nov 11,2022

Avalanche Technology announced production of its 3rd-Gen 22nm MRAM devices

pMTJ STT-MRAM developer Avalanche Technology announced that its latest 3rd-Gen MRAM devices are now in production at its foundry partner, United Microelectronics Corporation (UMC). The company says that its new MRAM chips offer significant density, endurance, reliability and power benefits over existing non-volatile solutions.

Avalanche Technology SPnvSRAM G2 MRAM evaluation board photo

Avalanche's new Parallel x 32 series is offered as a standard product in various density options and has asynchronous SRAM-compatible read/write timings. Avalanche also says that it will soon start developing 16Gb MRAM chips.

Read the full story Posted: Sep 15,2022

Researchers use MIFL to increase the magnetoresistance of pMTJs

Researchers from the University of Arizona developed a new pMTJ structure that exhibits high magnetoresistance, strong retention and is likely to achieve fast switching times as well.

pMTJ with multi-interface free layer (Arizona University)

The new structure uses a multi-interface free layer (MIFL) which incorporate multiple materials with different properties. The researchers used a ferromagnetic CoFeB layer with nonmagnetic Mo or MgO layers. The magnetoresistance can be controlled by changing the thickness of the CoFeB layer. The researchers managed to demonstrate a magnetoresistance of over 200%.

Read the full story Posted: Dec 31,2021

Avalanche and LinearASICs to co-develop companion chiplets for Avalanche's Space Grade MRAM

pMTJ STT-MRAM developer Avalanche Technology announced that it has signed an agreement with LinearASICs Inc. to develop companion chiplets to offer a complete portfolio of Space Grade products with SPI and DDR interfaces, based on Avalanche's 1Gb Space Grade MRAM.

Avalanche pMTJ STT-MRAM P-SRAM Serial QSPI Evaluation Kit photo

Avalanche's 2nd-Gen P-SRAM evaluation kit

LinearASICs will provide standalone serial interface chiplets such as Octal SPI (OSPI), as well as standard memory interface chiplets such as DDR. These chiplets will be available as standalone devices or integrated modules through Avalanche.

Read the full story Posted: Sep 22,2021

Avalanche starts production of space-grade 16-64Mb STT-MRAM devices

pMTJ STT-MRAM developer Avalanche Technology announced that it is now shipping new space-grade parallel asynchronous x16-interface high-reliability P-SRAM (Persistent SRAM) memory devices, based on its latest STT-MRAM technology.

Avalanche pMTJ STT-MRAM P-SRAM Serial QSPI Evaluation Kit photo

Avalanche says that its STT-MRAM devices are smaller and more efficienct compared to Toggle MRAM based products, currently adopted in aerospace applications. The Parallel x16 Space Grade series is offered in 16Mb, 32Mb and 64Mb density options and has asynchronous SRAM compatible 45ns/45ns read/write timings. All three density options currently in production and available within industry standard lead times.

Read the full story Posted: May 05,2021

Avalanche Technology's Serial P-SRAM STT-MRAM memory devices are now shipping

pMTJ STT-MRAM developer Avalanche Technology announced that its new industrial-grade Serial (SPI) P-SRAM (Persistent SRAM) memory devices are now available. The Serial (SPI) memory devices are designed to be drop-in replacements to Cypress F-RAM and Everspin Toggle MRAM memory products.

Avalanche pMTJ STT-MRAM P-SRAM Serial QSPI Evaluation Kit photo

The Series (SPI) series supports up to 50MHz clock rate in 1Mb and 4Mb density options, in two packages - 8-pin SOIC and 8-pin WSON. These use Avalanche's 40nm pMTJ STT-MRAM chips.

Read the full story Posted: Sep 29,2020

Avalanche Technology raises $33 million in a new funding round

pMTJ STT-MRAM developer Avalanche Technology announced that it closed its latest funding round led by Thomvest Ventures, having raised $33 million.

Avalanche currently brands its MRAM chips as P-SRAM (persistent SRAM) devices. The new funds will enable the company to develop higher-density P-SRAM devices. In addition, Avalanche says it will develop the higher densities of "persistent DRAM" required for the next generation of machine learning architectures.

Read the full story Posted: Jun 03,2019