December 2017

2017 is soon over - and this was a very exciting year for the MRAM industry. MRAM adoption continues, embedded MRAM is approaching and companies continue to announce advances and new products. Interest in MRAM technology and other next-generation memory technologies is clearly on the rise.

Here are the top 10 stories posted on MRAM-Info in 2017, ranked by popularity (i.e. how many people read the story):

1. TSMC to start eMRAM production in 2018 (Jun 8)
2. Spin Transfer Technologies starts sampling 80nm OST-MRAM chips (Jan 26)
3. Samsung reaffirms 2018 target for STT-MRAM mass production (May 26)
4. Everspin announces new MRAM customers and products (Mar 10)
5. TDK presents the basic principles and challenges of embedded STT-MRAM (May 23)
6. GlobalFoundries and Everspin say that the pMTJ STT-eMRAM features high reliability at high temperatures (Jun 30)
7. Samsung to soon start mass producing 28nm embedded MRAM (Sep 28)
8. Spin Transfer Technologies and Tokyo Electron to co-develop next-gen STT-MRAM devices (Oct 16)
9. Everspin reports its financial results for Q3 2017, focuses on 256Mb STT-MRAM (Nov 14)
10. Everspin reports its financial results for Q4 2016 (Mar 10)

In March 2017 Everspin announced its nvNITRO line of storage accelerators, with 1GB and 2GB capacities, based on the company's 256Mb DDR3 ST-MRAM chips. Everspin is accepting orders for these accelerators which should start shipping by the end of the year.

In the video above you can see a recent demonstration by Everspin of how these nvNITRO accelerators provide superior latency determinism enabling a Low Latency Write Buffer for applications such as Apache Log4J.