March 2011

Updates from Spingate, working on a 4Gbit pS-MRAM chip design

Spingate is a US-based company focusing on perpendicular MRAM technologies. In November 2009 we have talked to Dr. Alex Shukh, Spingate's co-founder, CTO and CEO, and he explains Spingate's technology . Today Spingate sent us another update.

Spingate says that since 2009 they continued to build their IP portfolio. The company invented and has been developing a new class of nonvolatile spin logic that combines advantages of conventional CMOS logic and MRAM technologies. Spingate's spin logic represents an elegant synthesis of the conventional logic with embedded MRAM cells residing above the silicon. The memory cells have a marginal impact on layout of the logic but provides it with a non-volatility. The spin logic may offer significant performance enhancements of conventional logic devices by eliminating numerous off-chip data flows resulting in speeding up the entire system. The embedded MRAM cells employ spin induced switching mechanism and magnetic materials with either in-plane or perpendicular anisotropy. The spin logic employing perpendicular magnetic materials has better scalability and lower switching current than that based on in-plane materials. The company's logic is especially attractive for application in field programmable gate arrays (FPGAs) due to its non-volatility, simplicity, high speed and reduced chip size. Moreover it can be used for creation of nonvolatile micro-controllers and microprocessors.

Read the full story Posted: Mar 31,2011

Researchers develop faster MRAM technology, seek to commercialize it

Researchers from the Physikalisch-Technische Bundesanstalt (PTB) developed new technology that can make MRAM much faster - from about 400Mbit/s data rate to 2Gbit/s. According to PTB, the new tech will also reduce power consumption and thermal load and will make the MRAM chip more reliable (reduce the bit error rate). PTB has patented this technology and are looking to find an industrial partner to develop and manufacture MRAM chips.

PTB has integrated ballistic bit triggering into the MRAM cell. This basically means that their technology allows changing (writing) one MRAM cell without affecting the cells around it - which reduces error rates. Here's how they describe it: "The (magnetic) pulse ensures that the magnetization of a cell which is to be switched performs half a precision rotation (180°), while a cell whose storage state is to remain unchanged performs a complete precision rotation (360°). In both cases, the magnetization is in the state of equilibrium after the magnetic pulse has decayed, and magnetic excitations do not occur any more."

Read the full story Posted: Mar 09,2011