Researchers from the University of Arizona developed a new pMTJ structure that exhibits high magnetoresistance, strong retention and is likely to achieve fast switching times as well.

pMTJ with multi-interface free layer (Arizona University)

The new structure uses a multi-interface free layer (MIFL) which incorporate multiple materials with different properties. The researchers used a ferromagnetic CoFeB layer with nonmagnetic Mo or MgO layers. The magnetoresistance can be controlled by changing the thickness of the CoFeB layer. The researchers managed to demonstrate a magnetoresistance of over 200%.

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