MRAM production

In 2019, Samsung Electronics announced that it has started to mass produce its first embedded MRAM devices, made using the company's 28 nm FD-SOI process. In 2021, Samsung announced it is working to scale down to 14 nm processes.

The company now says that it has finalized the development of its 14 nm eMRAM process, and will be read to mass produce it by the end of 2024. The company says that the 14 nm process achieve a 33% area scaling compared to its 28 nm process, and it also enables a 2.6x faster read cycle time. Samsung says that its eMRAM enables the smallest size 16MB memory die.

Netsol is pleased to announce a global distribution partnership with Digi-Key Electronics, a pivotal development in its effort to improve global access and delivery of its MRAM and SRAM  products.

Digi-Key Electronics is recognized for its immense inventory of electronic parts that are immediately available for shipment. This capability aligns perfectly with the demands of the fast-paced electronics industry, where Digi-Key has distinguished itself by ensuring rapid, efficient delivery services to its global customer base. 

Through this newly forged agreement, Digi-Key will leverage its extensive online presence, spanning over 180 countries, to market and distribute Netsol's memory products to customers around the globe.

pMTJ STT-MRAM developer Avalanche Technology launched two new densities of its 3rd generation space-grade parallel asynchronous x32-interface high-reliability P-SRAM (Persistent SRAM) memory devices, based on its latest STT-MRAM tech, in 2Gb and 8Gb.

In June 2023 Avalanche announced that it is providing its products for satellite power applications developed by Advanced Space Power Equipment. Earlier that year Avalanche announced that its Gen-3 Space Grade Dual QSPI solution is now available in pre-production.

Everspin Technologies announced that it has applied for the CHIPS Incentives Program, asking for funding for an additional 200mm MRAM production line. Everspin says the new funding will help it increase its long-term R&D IP capability. 

In November 2022, Everspin asked for funding to build a new MRAM production line in Indiana.

Reports in Japan suggest that Taiwan's Powerchip Semiconductor Manufacturing (PSMC) will enter into a new MRAM R&D project, together with Japan's Power Spin. PSMC plans to start producing MRAM chips by 2029, at its 12-inch factory that it is now building in Japan.

Power Spin, that holds MRAM IP originally developed at Tohoku University, will license its IP to PSMC and will assist in the required R&D and ramp-up of production at PSMC's fab. PSMC looks to utilize the MRAM technology mainly for generative AI data center solutions.

At the 2023 MRAM Forum, a key event by the IEEE Magnetics Society tied to the IEDM conference, Mr. Noh, Chief Technology Officer at Netsol, provided an overview of the company's advancements in MRAM technology.

Mr. Noh introduced Netsol's development of its first standalone MRAM, created using 28nm eMRAM technology from Samsung Foundry. He presented the technical characteristics of the product, focusing on its data retention, endurance,  resistance to magnetic interference and quality, which have been validated through extensive testing.

NETSOL released new 1Mb to 32Mb serial and 1Mb to 64Mb parallel STT-MRAM products through the Samsung Electronics Foundry.

NETSOL MRAM products are ideal for applications that need to store and retrieve data quickly and frequently due to STT-MRAM's virtually unlimited endurance and fast-write features. Ideal for code storage, data logging, backup and working memory in industrial devices/ equipment, it can replace NOR Flash, FeRAM, low-power SRAM and nvSRAM products, among others with unmatched performance and non-volatile features.

NETSOL STT-MRAM products provide fast read and write features without a delay in recording and storing data even when the system is powered off, and is cost-effective by enabling compact systems without the need for batteries or capacitors based on its non-volatile features.

pMTJ STT-MRAM developer Avalanche Technology announced that its Gen-3 Space Grade Dual QSPI solution is now available in pre-production.

The devices are based on the company's latest generation STT-MRAM technology. Avalanche says that the new devices offer significant density, endurance, reliability, and power benefits, over existing memory solutions for aerospace and defense applications, particularly for easily configuring advanced SoCs and FPGAs, which are known to present complex design challenges.

Earlier this year, Everspin Technologies announced that it aims to build a new production line in the state of Indiana, US, that will increase Everspin's production capacity for both Toggle MRAM and STT-MRAM. The company is working with state and federal government sources to secure funding for the new production line.

Everspin says it also plans to work with the local research community to enhance domestic research for MRAM technology development, creating a Technology Development Center at the proposed Indiana-based location. Everspin says that it is the only US-based commercial manufacturer of MRAM devices today, and increasing its capacity in the US is of strategic importance to its commercial and US Government partners.