MRAM production

NETSOL released new 1Mb to 32Mb serial and 1Mb to 64Mb parallel STT-MRAM products through the Samsung Electronics Foundry.

NETSOL MRAM products are ideal for applications that need to store and retrieve data quickly and frequently due to STT-MRAM's virtually unlimited endurance and fast-write features. Ideal for code storage, data logging, backup and working memory in industrial devices/ equipment, it can replace NOR Flash, FeRAM, low-power SRAM and nvSRAM products, among others with unmatched performance and non-volatile features.

NETSOL STT-MRAM products provide fast read and write features without a delay in recording and storing data even when the system is powered off, and is cost-effective by enabling compact systems without the need for batteries or capacitors based on its non-volatile features.

pMTJ STT-MRAM developer Avalanche Technology announced that its Gen-3 Space Grade Dual QSPI solution is now available in pre-production.

The devices are based on the company's latest generation STT-MRAM technology. Avalanche says that the new devices offer significant density, endurance, reliability, and power benefits, over existing memory solutions for aerospace and defense applications, particularly for easily configuring advanced SoCs and FPGAs, which are known to present complex design challenges.

Earlier this year, Everspin Technologies announced that it aims to build a new production line in the state of Indiana, US, that will increase Everspin's production capacity for both Toggle MRAM and STT-MRAM. The company is working with state and federal government sources to secure funding for the new production line.

Everspin says it also plans to work with the local research community to enhance domestic research for MRAM technology development, creating a Technology Development Center at the proposed Indiana-based location. Everspin says that it is the only US-based commercial manufacturer of MRAM devices today, and increasing its capacity in the US is of strategic importance to its commercial and US Government partners.

pMTJ STT-MRAM developer Avalanche Technology announced plans to start producing some of its MRAM devices at LA Semiconductor, a US-based mixed-signal foundry at Pocatello ID (a former onsemi site) with its 180 nm mixed signal and power process capabilities.

Avalanche Technology says that by moving its production  to the US, it shows its commitment to the local aerospace and defense community with an assured source of domestic manufacturing.

Earlier this year, Everspin Technologies announced its latest STT-MRAM devices, the EMxxLX xSPI serial interface memory. The company now announced that the EMxxLX devices are now commercially available.

The EMxxLX family is the only memory device offering density up to 64Mb, octal interface with 400MB/s bandwidth, and compatibility with the xSPI standard. The EMxxLX features 1000X faster write times compared to NOR flash.

Disclosure: the author of this post holds shares at Everspin

pMTJ STT-MRAM developer Avalanche Technology announced that its latest 3rd-Gen MRAM devices are now in production at its foundry partner, United Microelectronics Corporation (UMC). The company says that its new MRAM chips offer significant density, endurance, reliability and power benefits over existing non-volatile solutions.

Avalanche's new Parallel x 32 series is offered as a standard product in various density options and has asynchronous SRAM-compatible read/write timings. Avalanche also says that it will soon start developing 16Gb MRAM chips.

A few months ago, Everspin Technologies launched a new family of SPI/QSPI/xSPI interface MRAM products that offer the world's highest performance persistent memory with full read and write bandwidth of 400 Megabytes per second through the new JEDEC expanded Serial Peripheral Interface (xSPI) standard interface. The EMxxLX family was launched with densities ranging from 8 Mbit to 64 Mbit.

Today Everspin announced a new xSPI MRAM device, the EM128LX, that expands the product line to 128Mbit.  Everspin says that the combination of increased density with up to 233 megabytes/second full read and write bandwidth means that system designers now have the option of merging code and data memory on the same device, reducing cost, power, and area.

In March 2019 Samsung Electronics announced that it has started to mass produce its first embedded MRAM, made using the company's 28nm FD-SOI process. The company now announced that it managed to improve the MTJ function of its MRAM, which makes it suitable for more applications.

Samsung will now expand the application of its eMRAM solutions to more markets - specifically the automotive, wearable, graphic memory, low level cache, internet of things and edge artificial intelligence markets.

pMTJ STT-MRAM developer Avalanche Technology announced that its new industrial-grade Serial (SPI) P-SRAM (Persistent SRAM) memory devices are now available. The Serial (SPI) memory devices are designed to be drop-in replacements to Cypress F-RAM and Everspin Toggle MRAM memory products.

The Series (SPI) series supports up to 50MHz clock rate in 1Mb and 4Mb density options, in two packages - 8-pin SOIC and 8-pin WSON. These use Avalanche's 40nm pMTJ STT-MRAM chips.