Spin Memory

Orthogonal Spin Transfer MRAM developer Spin Memory liquidates

Orthogonal Spin Transfer MRAM (OST-MRAM) technology developer Spin Memory is shutting down. The company's main investor and founding company, Allied Minds, said in a statement that the main reasons challenges in securing new customers and COVID-19 which "significantly delayed the required testing of its development chip with ARM".

MRAM by Spin Memory photo

This is a sad ending to Spin Memory, which began its way as Spin Transfer Technologies - a spin-off from NYU that was established together with Allied Minds.

Read the full story Posted: Jul 15,2021

Spin Memory announces the Universal Selector, said to significantly improve existing and emerging memory technology capabilities

Spin Memory (previously Spin Transfer Technologies) announced that it has developed a new innovative technology, called the Universal Selector, which will significantly improve the capabilities of existing and emerging memory technologies (including MRAM, DRAM and ReRAM) as it enables a novel way to design vertical cell transistors which achieves higher levels of performance, reliability and density.

MRAM by Spin Memory photo

Spin Memory’s Universal Selector is a selective, vertical epitaxial cell transistor whose channel has a low enough doping concentration that it operates in full depletion. For MRAM memory, the Universal Selector enables manufacturers to create 1T1R memory bitcells of 6F2 – 10F2 (6F2 – 10F2), enabling manufacturers to embed up to five times more memory in the same area footprint with minimal additional wafer processing costs.

Read the full story Posted: Aug 13,2020

Spin Memory raised $8.3 million as it extends its Series B Funding Round

Spin Memory logoSpin Memory (previously Spin Transfer Technologies) announced that it has raised $8.3 million in an extension to its Series B funding. The company's recent investors in the company participated in this round, out of which Allied Minds invested $4 million.

The new funding includes Arm, Applied Ventures (the VC arm of Applied Materials) and Abies Ventures. Spin Memory says that the additional funding will support the company's MRAM R&D.

Read the full story Posted: Jul 19,2020

Spin Memory announces an MRAM IP licensing agreement with Arm

Spin Memory (previously Spin Transfer Technologies) announced that is has signed a licensing agreement with Arm. The license includes Spin Memory's Endurance Engine technology and IP - and as part of the agreement Arm and Spin memory will also work together to create SRAM-class MRAM design solutions.

Spin Memory's Endurance Engine is a design architecture that is used to develop embedded MRAM solutions.

Read the full story Posted: Nov 13,2018

Spin Transfer Technologies announces a breakthrough new STT-MRAM technology

Spin Transfer Technologies (STT) announced that its unique Precessional Spin Current (PSC) structure can increase the spin-torque efficiency of any MRAM device by 40-70 percent, which means dramatically higher data retention while consuming less power.

Following advanced testing, the company says that these higher spin-torque efficiencies translate to retention times lengthening by a factor of over 10,000 while reducing write current.

Read the full story Posted: Apr 30,2018

Spin Transfer Technologies and Tokyo Electron to co-develop next-gen STT-MRAM devices

Spin Transfer Technologies (STT) announced that it has signed an agreement with Tokyo Electron (TEL) to collaborate on the development of next-generation SRAM and DRAM-class STT-MRAM devices.

Spin Transfer Technologies says that the combination of its STT-MRAM technology with TEL’s advanced PVD MRAM deposition tool will allow the companies to quickly develop processes for the highest density and endurance devices.

Read the full story Posted: Oct 16,2017

Spin Transfer Technologies raised $22.8 million via a convertible bridge facility

Spin Transfer Technologies announced that it has raised $22.8 million via a convertible bridge facility. STT says that this will help the company get ready to complete its Series B funding round, targeting strategic investors and planned to conclude by end of Q1 2018.

In January 2017 STT announced that it has started to deliver fully functional ST-MRAM samples to customers in North America and Asia. The sample devices are based on the company's Orthogonal Spin Transfer Magneto-Resistive Random Access Memory technology (OST-MRAM), and use 80nm perpendicular magnetic tunnel junctions (MTJs)., the latest generation of MRAM technology.

Read the full story Posted: Oct 06,2017

Spin Transfer Technologies fabricated 20nm OST-MRAM MTJs, preparing to deliver samples

Spin Transfer Technologies (STT) announced that it fabricated 20nm perpendicular MRAM magnetic tunnel junctions (MTJs) based on the company's Orthogonal Spin Transfer MRAM (OST-MRAM).

STT is now preparting to deliver OST-MRAM samples to select customer, following requests from "certain major semiconductor and systems companies". The company is processing more than 40 wafer lots at its R&D fab in Fremont, California.

Read the full story Posted: Sep 27,2016