Last month we reported that Avalanche Technology has been awarded four key "milestone" patents for its STT-MRAM technology and solid-state storage array system design. Today the company announced that it has been awarded four new STT-MRAM patents in areas of Perpendicular STT-MRAM and MRAM Integration and Manufacturing. Avalanche has over 200 filed patents that covers the full spectrum from memory cell/circuit design and manufacturing to solid-state storage system development and deployment.
The company has been awarded three key patents in the area of Perpendicular STT-MRAM:
- “Magnetic Random Access Memory With Switching Assist Layer” (USPTO #8,492,860) – high speed STT-MRAM MTJ cell design with switching mechanism that was proven in real devices to achieve switching speed better than 300 picoseconds, while also accomplishing superior operability and manufacturability.
- “Method For Magnetic Screening Of Arrays Of Magnetic Memories” (USPTO #8,553,452) – fundamental method to effectively identify and eliminate soft-error-prone cells at wafer level to greatly enhance STT-MRAM product throughput, yield and long-term reliability.
- “Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) Device With Shared Transistor And Minimal Written Data Disturbance” (USPTO #8,611,145) – fundamental method to enable STT-MRAM functionality at extreme data densities where MTJ cell writability is significantly enhanced by acquiring writing power from adjacent unused MTJ cells.
The next patent is in the area of MRAM Integration and Manufacturing. The patent is titled “MRAM manufacturing process for a small MTJ design with a low programming current requirement” (USPTO#8,542,526) – and it discloses a manufacturing method to pattern small MTJ elements with enhanced extendibility and scalability to 1xnm for high-density applications.