Researchers from the University of Virginia have developed a novel technology using MRAM for short- and long- term storage solutions. This device uses a spinning torque current to change the magnetization of each memory domain to achieve higher memory bit density and faster writing speeds. These memory domains are allocated along the memory line and a multi-ferroic element near each domain provides magnetization stability when a voltage is not being applied.
To write the individual bit, a current is passed through the memory line and the interaction of the multi-ferroic element and the free layer determines either â1â anti-parallel polarity between layers (high resistance) or â0â parallel polarity between layers (low resistance). The magnetization of the memory domains is then changed by reducing the exchange bias between the memory line and the multi-ferroic element (see figure above). Memory domains are independently writable and only require a single current input to store data. This significantly reduces energy consumption and time for the writing cycle, thereby improving both cost and performance efficiency.