Micromem says that their Memory (MRAM) product is now complete through the Global-Communication-Semiconductor and BAE Systems foundries. The MRAM is fully packaged in arrays, and it's being tested and evaluated against standard and routine memory tests.
Someone uploaded an MRAM presentation online. It explains how MRAM works, about GMR, competing technologies, advantages, applications and more.
Samsung Electronics announced today that it has begun production of 512Mb Phase-Change Memory (PRAM). It is targeted for mobile devices. It features high-performance and low power. Samsung says that a handset with PRAM can extend its lifetime over 20%.
The 512Mb PRAM can erase 64KWs (kilowords) in 80ms, said to be over 10 times faster than NOR Flash memory. In data segments of 5MBs, PRAM can erase and rewrite data approximately seven times faster than NOR Flash.
Researchers from NY University, together with Spin Transfer Technologies have demonstrated magnetic vector switching for current pulses as short as 100 picoseconds. This is among the shortest write times reported by developers of MRAM devices.
The underlying technology is based on a unique orthogonal orientation between the magnetic vectors in two magnetic layers -- a pinned magnetic layer where the magnetic orientation is fixed and a free magnetic layer where the magnetic field is aligned in one of two directions, thereby storing one bit of binary information. In contrast, all other MRAM efforts involve magnetic vectors that are both parallel to the physical layers or both perpendicular to the layers. Termed Orthogonal Spin Transfer MRAM (OST-MRAM), the technology results in a deterministic switching behavior, which enables high speed and very low power device operation. Other approaches result in stochastic switching which involves thermal fluctuations to initiate or hasten the switching process, leading to an incubation delay and requiring higher power for operation.
In addition, the OST-MRAM technology allows the use of magnetic tunnel junctions to achieve large read-out signals, while maintaining the advantages of deterministic switching and low power operation. Another key aspect of the technology is that it does not require sophisticated processes, such as magnetic annealing, for the fabrication of devices. This will significantly lower the cost of future commercial devices based on OST-MRAM technology, compared to other MRAM devices currently in development.
Back in October 2008, we have talked to Vincent Chun from Spin-Transfer-Technologies, and he explained their tech and plans.
Everspin announced today that Airbus has decided to use their MRAM for the flight control computer on the A350 XWB aircraft.
Airbus will use 4Mb and 16Mb MRAM chips. The MRAM will replace both SRAM and Flash components.