June 2008

NVE notified of MRAM patent grant

NVE Corporation has been notified by the U.S. Patent and Trademark Office of the expected grant today of two patents relating to spintronics.

The first patent is number 7,390,584 and titled "Spin dependent tunneling devices having reduced topological coupling." Spin-dependent tunnel junctions, also known as magnetic tunnel junctions or tunneling magnetic junctions, are spintronic structures that can form the heart of spintronic magnetoresistive random access memory technology, commonly known as MRAM.

The second patent is number 7,391,091 and titled "Magnetic particle flow detector," and is related to spintronic biosensor technology, which could be used in laboratory-on-a-chip systems.
Read the full story Posted: Jun 24,2008

Freescale to spin-off MRAM to a new company called EverSpin

Freescale has decided to form a new company called EverSpin, and to give its MRAM technology portfolio to this new company. Several companies (New Venture Partners, Sigma Partners, Lux Capital, Draper Fisher Jurvetson and Epic Ventures) will invest 20M$ in the new company.

EverSpin will operate in a portion of Freescale's Chandler (Arizona, US) semiconductor foundry and take on about 50 existing company employees who were associated with the MRAM technology.

Read the full story Posted: Jun 09,2008