July 2006

Singulus has received a follow-up contract for a TIMARIS system. The customer that had placed an order with Singulus Technologies for a TIMARIS system for Thin Film Read/Write Heads on December 28, 2005, has now ordered an additional machine, the analyst reports. Including the two orders from the completed second quarter, a total of five sets of TIMARIS machines are scheduled for delivery, the analyst says.
The new order indicates that customers are very happy with the quality of the equipment, the analyst says. Apart from the production of MRAM memory components, the TIMARIS machines may be used in the segment of harddisks, the analyst mentions

Read more here

Tegal Corporation today announced that Crocus Technology SA, a startup company specializing in magnetic random access memory (MRAM), has placed an order for a Tegal 6500series critical plasma etch system outfitted with Spectra(TM) process modules. Crocus Technology SA of Grenoble, France recently received $17M in funding to commercialize MRAM technology and is in the process of starting a prototype and pilot plant for MRAM production.

The Tegal 6500 series tool features the Spectra ICP plasma source optimized for the etching of magnetic thin films for GMR/TMR magnetic head and MRAM memory device technology. The Spectra reactor is an extension of Tegal's patented dual frequency technology for the patterning of difficult-to-etch metal and metal oxide films based on inductively coupled plasma (ICP) technology. The Tegal 6550 als oincorporates a dual-chamber platform with patented rinse-strip-rinse process capability that is proven to eliminate corrosion in thin magnetic materials. Tegal's approach to magnetic thin film etching includes its proprietary "Stop-on-Dielectric" process capability.

Dr. Daniel A. Baker, NVE's CEO commented in NVE's conference call: "On July 10 Freescale announced that the first commercial MRAM device was in volume production. This is an impressive accomplishment by a talented Freescale team, and we congratulate them. It is also gratifying for Dr. Jim Daughton, our founder and an MRAM pioneer who made many inventions in the field and had a vision for MRAM...."

"We are proud NVE's role in MRAM's development and we look forward to a bright future. Based on a preliminary analysis, we believe Freescale's MRAM comes within the scope of claims in a number of NVE patents. We hope to negotiate a mutually beneficial agreement with Freescale to give them access to NVE intellectual property without having to resort to litigation. As we have said before, we cannot predict the possible timing of agreements, but we are confident of the strength of NVE's MRAM inventions and patent portfolio."

Product sales for the quarter increased 71% over the prior-year quarter to $3.05 million from $1.78 million. Total revenue, which consisted of product sales and contract research and development revenue, increased 20% to $3.64 million for the first quarter of fiscal 2007 from $3.03 million for the prior-year quarter. Net income for the quarter was $891,806 or $0.19 per diluted share, compared to $412,649 or $0.09 per diluted share for the prior-year quarter. Net income for the quarter ended June 30, 2006 included the effect of $2,569 in non-cash stock-based compensation due to the implementation of SFAS 123(R).

Net income for the first quarter of fiscal 2007 also included a $473,241 non-cash provision for income taxes compared to $240,468 for the prior-year quarter.

NEC Corporation today announced that it has succeeded in developing new MRAM cell technology suitable for high speed memory macro embedded in next generation system LSIs. The newly developed cell technology includes three key elements; a 2T1MTJ (two transistors and one magnetoresistive tunneling junction) cell structure to accelerate write mode cycle time, a 5T2MTJ cell structure to accelerate read mode cycle time and a write-line-inserted MTJ to reduce write current. The new cell technology realizes added-value, non-volatile MRAM macros that can be substituted for SRAM (static random access memory) macros embedded in system LSIs.

Features of the newly developed elements:
1. 200MHz random access write operation: Elimination of the upper limit of the writing current by a 2T1MTJ cell enables high speed write operation. In conventional MRAM memory cells, writing current must be within upper and lower limits (note 1). This complicates the write current source circuit and it thus cannot operate at over 100MHz.
2. 500MHz random access read operation: Intra-cell-signal amplification in a 5T2MTJ cell enables high speed read operation. Cell current signal is amplified and transformed into voltage signal in each cell. In conventional MRAM memory cells, a small reading current difference signal through the bit line with large parasitic capacitance makes sense amplifier circuits complicated. These kinds of circuits cannot operate at over 200MHz.
3. Reduction of writing current down to 1/3: A write-line-inserted MTJ structure reduces writing current to 1/3 as compared with conventional MTJ structure writing currents. This small current reduces MRAM cell size.

Interesting article about Freescale's recent MRAM announcement, and what it really means for the company.
"Sometimes being the first to market with a near-revolutionary new technology warrants hero status. But perhaps status is all it warrants."
For now, Freescale will sell MRAM to niche markets like the auto industry, which will use it for simple dashboard-type applications like controlling heating and cooling systems or for use in "smart" airbags, explains Semico's Merritt. MRAM will also be useful to the Department of Defense since it isn't susceptible to the radiation problems in deep space that other types of chips experience, he says.

Read more here 

Freescale started shipping of the world's of its 4 Mbit MRAM chip. The MR2A16A is now entering commercial production, with small-volume orders priced at $25 per chip.

The commercial production of Freescale's MRAM chips is a great breakthough, and it follows two years of product sampling. The read/write speed of these chips is 35 ns, and they are based on a 0.18-micro process. The cell size of the 4Mbit chip is 1.26 square micron.