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Avalanche to commence volume pMTJ STT-MRAM production in early 2017

Oct 21, 2016

STT-MRAM developer Avalanche Technology logo Avalanche Technology announced that volume production of its pMTJ STT-MRAM chips on 300 mm wafers will begin in early 2017. Avalanche started to sample 32Mb and 64Mb STT-MRAM chips in 2015

Avalanche has entered into a manufacturing agreement with Sony Semiconductor Manufacturing Corporation (SSMC) for this volume production. Avalanche targets several markets, including Storage, Automotive, IoT and embedded applications. Avalanche will offer discrete MRAM chips from 4Mb to 64Mb in size.

STT-MRAM maker Avalanche Technology raised $23 million

Feb 03, 2016

STT-MRAM developer Avalanche Technology logo Avalanche Technology raised $23 million from Thomvest Ventures, Vulcan Capital, Rogers Venture Partners, and VTB Capital. The company also has a substantial debt facility in place with Horizon Technology Finance.

Avalanche say that they are now bringing their Spin-Programmable STT-MRAM (SPMEM) discrete products to Tier-1 OEMS and licensing their embedded solutions (AvRAM) to strategic partners. The company previous financing round was announced in July 2012.

Avalanche Technology starts to sample 32/64 Mbit STT-MRAM chips

Jul 03, 2015

STT-MRAM developer Avalanche Technology logo Avalanche Technology announced that it began to sample STT-MRAM chips. Avalanche's proprietary perpendicular magnetic tunnel junction (pMTJ) cells are manufactured in a high volume, low cost, standard CMOS 300mm process.

Those first sample chips are 32Mbit and 64Mbit in size, and offer an industry-standard SPI interface built on a 55nm-node foundry process. Avalanche is also offering its STT-MRAM technology (which they brand as AvRAM) under license as embedded memory for integrated SOC designs.

Yole sees STT-MRAM as the most suitable technology to start replacing DRAM in 2018

Feb 08, 2015

Yole Developpement released a new emerging-memory market report in which they try to asses the future of the memory market. Yose says that Phase-change memory (PCM) is pretty much dead, and the two main emerging memory technologies are MRAM and Resistive random Access Memory (ReRAM or RRAM).

Yole Développement emerging memory market slide (2015)

While RRAM is very promising in the near future, with support from Micron (they plan to release RRAM chips in 2015) and Panasonic while other players are expected to react quickly. RRAM and STT-MRAM will compete in 2015-2016 in some standalone markets (such as embedded MCU, wearables and smart cards and the storage class memory for enterprise storage which will be the biggest market), and it's not clear yet which technology will be the most popular.

Avalanche Technology announce four additional key MRAM and STT-MRAM patents

Aug 08, 2014

Avalanche Technology logo Avalanche Technology has been awarded new key patents in the areas of STT-MRAM technology, MRAM integration and manufacturing and perpendicular Magnetic Tunnel Junction (pMTJ) STT-MRAM. This follows eight new key patents awarded to Avalanche since the beginning of 2014.

Avalanche (founded in 2006 and based in California, US) developed patented Spin Programmable STT-MRAM (SPMEM) memory that uses a revolutionary proprietary spin current and voltage switching technology. The company wants to license their technology for embedded applications and also build discrete standalone memory devices. In July 2012 the company raised $30 million.

Avalanche has been awarded four more key STT-MRAM patents

Apr 22, 2014

Avalanche Technology logoLast month we reported that Avalanche Technology has been awarded four key "milestone" patents for its STT-MRAM technology and solid-state storage array system design. Today the company announced that it has been awarded four new STT-MRAM patents in areas of Perpendicular STT-MRAM and MRAM Integration and Manufacturing. Avalanche has over 200 filed patents that covers the full spectrum from memory cell/circuit design and manufacturing to solid-state storage system development and deployment.

The company has been awarded three key patents in the area of Perpendicular STT-MRAM:

Avalanche has been awarded four key "milestone" STT-MRAM patents

Mar 26, 2014

Avalanche Technology logo Avalanche Technology has been awarded four key "milestone" patents for its STT-MRAM technology and solid-state storage array system design. Avalanche has over 200 filed patents that covers the full spectrum from memory cell/circuit design and manufacturing to solid-state storage system development and deployment.

Avalanche (founded in 2006 and based in California, US) developed patented Spin Programmable STT-MRAM (SPMEM) memory that uses a revolutionary proprietary spin current and voltage switching technology. The company wants to license their technology for embedded applications and also build discrete standalone memory devices. In July 2012 the company raised $30 million.

Avalanche raises $30 million to bring their STT-MRAM products to market

Aug 01, 2012

Avalanche Technology logo Avalanche Technology announced that it has raised $30 million from existing investors (Vulcan Capital, Sequoia Capital, Bessemer Venture Partners, Thomvest Ventures and Qualcomm Ventures) and also from a new investor, VTB capital. Avalanche hopes that this investment will enable them to bring the first products into the market.

Avalanche will produce STT-MRAM chips based on their proprietary SPMEM (Spin Programmable Memory) technology. SPMEM uses a revolutionary spin current and voltage switching technology that enables "lower write current, smaller cell size and excellent scalability". The first products will use a 65 nm process, but the company says that their technology is scalable to 10 nm or even less.

Avalanche and ISI developed a new wafer level analyzer for STT-MRAM

Jul 09, 2009

Avalanche Technology and Integral Solutions International (ISI) have designed a Wafer Level Analyzer, the WLA-3000, to be used in STT-MRAM development. 

The WLA-3000 includes specific hardware test modules including nS-range Pulse Generator that quickly measures switching currentse of MTJ devices in STT-MRAM as a function of Pulse Width. Using this Pulse Generator module, customers will be able to perform Error Rate, Switching Probability, Endurance Testing, and Read/Write Disturb analysis in a fraction of time as compared to other slower pulsers.