Everspin rebrands its persistent memory product family as PERSYST
Everspin Technologies announced that its persistent memory product family is now organized under the new brand name PERSYST. Everspin says that this new initiative to simplify product identification beyond conventional alphanumeric identifiers will make it easier for companies select the right solutions. The company’s legacy toggle MRAM parallel and serial products, 1Gb ST-DDR4 and new EMxxLX xSPI Industrial STT-MRAM will reside under the PERSYST brand.
Everspin says that the PERSYST family of products represents the unique combination of RAM-like speed and latency with non-volatility. With virtually unlimited endurance, PERSYST provides the speed and persistence to capture critical data continuously. It's perfect for use in a variety of industries, such as, automation, robotics, networking, data storage, AI, healthcare, gaming and FPGA.
NETSOL signs Digi-Key MRAM and SRAM distribution agreement
Netsol is pleased to announce a global distribution partnership with Digi-Key Electronics, a pivotal development in its effort to improve global access and delivery of its MRAM and SRAM products.
Digi-Key Electronics is recognized for its immense inventory of electronic parts that are immediately available for shipment. This capability aligns perfectly with the demands of the fast-paced electronics industry, where Digi-Key has distinguished itself by ensuring rapid, efficient delivery services to its global customer base.
Through this newly forged agreement, Digi-Key will leverage its extensive online presence, spanning over 180 countries, to market and distribute Netsol's memory products to customers around the globe.
Avalanche Technology adds new 2Gb and 8Gb densitites of its 3rd-Gen space-grade STT-MRAM
pMTJ STT-MRAM developer Avalanche Technology launched two new densities of its 3rd generation space-grade parallel asynchronous x32-interface high-reliability P-SRAM (Persistent SRAM) memory devices, based on its latest STT-MRAM tech, in 2Gb and 8Gb.
In June 2023 Avalanche announced that it is providing its products for satellite power applications developed by Advanced Space Power Equipment. Earlier that year Avalanche announced that its Gen-3 Space Grade Dual QSPI solution is now available in pre-production.
Researchers report the first all-antiferromagnetic tunnel junction device with both electrical switching and electrical readout
Researchers from Northwestern University, led by Prof. Pedram Khalili, report the first all-antiferromagnetic tunnel junction (ATJ) devices with both electrical switching and electrical readout of the antiferromagnetic state. The researchers observed a large room-temperature tunneling magnetoresistance effect that is comparable in size to conventional ferromagnet-based tunnel junctions.
To create the new devices, the researchers used sputtering to deposit the device films on conventional silicon wafers. The films are compatible with established semiconductor manufacturing processes.
Tiempro Secure's Secure Element succesfully implemented in GlobalFroundries 22-nm process with MRAM memory
France-based Tiempro Secure announced that its TESIC RISC-V Secure Element was implemented in GlobalFoundries’ 22-nm platform with embedded MRAM, after a rigorous characterization process.
Tiempo Secure says it leveraged its long-standing know-how in Secure IP, to adapt its TESIC design to the 22FDX technology process node. The TESIC platform has a secure architecture based on a RISC-V CPU core, several memory types (including ROM, RAM, Cache, Crypto-RAM, and MRAM), random number generators, security sensors, and secure crypto-accelerators. This provides a pre-silicon certified IP solution on GF’s 22FDX to SoC manufacturers who require a high-end Secure Element.
Everspin hopes to get US government support to expand its 200 mm MRAM production capacity
Everspin Technologies announced that it has applied for the CHIPS Incentives Program, asing for funding for an additional 200mm MRAM production line. Everspin says the new funding will help it increase its long-term R&D IP capability.
In November 2022, Everspin asked for funding to build a new MRAM production line in Indiana.
Everspin reports its Q4 2023 earning results
Everspin Technologies reported its financial results for Q4 2023, with revenues of $16.7 million and a net income of $2 million. Product sales were a bit slower than last year, but licensing and royalties were higher at $4.3 million (up from $1.1 million in 2022).
For the full year 2023, Everspin achieved record revenues of $63.8 million (up 6% from 2022), and net income of $9.1 million. At the end of the year Everspin had a cash balance of $36.9 million.
Renesas developed new STT-MRAM circuit technology, achieves the world's fastest random access speed
Renesas Electronics announced that it has developed circuit technologies for embedded STT-MRAM that reduces the energy and voltage of the memory write operation.
Renesas produced a 22-nm MCU test chip, that includes a 10.8 Mbit embedded MRAM memory cell array. It achieves a random read access frequency of over 200 MHz and a write throughput of 10.4-megabytes-per-second (MB/s).
PSMC collaborates with Power Spin for MRAM production by 2029
Reports in Japan suggest that Taiwan's Powerchip Semiconductor Manufacturing (PSMC) will enter into a new MRAM R&D project, together with Japan's Power Spin. PSMC plans to start producing MRAM chips by 2029, at its 12-inch factory that it is now building in Japan.
Power Spin, that holds MRAM IP originally developed at Tohoku University, will license its IP to PSMC and will assist in the required R&D and ramp-up of production at PSMC's fab. PSMC looks to utilize the MRAM technology mainly for generative AI data center solutions.
Tohoku University researchers develop a high performance X nm MTJ
Researchers from Japan's Tohoku University developed a method to produce X nm MTJs, using a CoFeB/MgO stack structure. The researchers report that the extremely small device achieves both high-retention and high-speed. This was enabled by controlling the shape and interfacial anisotropies individually by varying the thickness of each CoFeB layer and the quantity of [CoFeB/MgO] stacks.
The researcher further report that shape anisotropy-enhanced MTJs showed good retention (> 10 years) at 150 °C at single nanometer sizes, whereas interfacial anisotropy-enhanced MTJs exhibited rapid speed switching (10 ns or less) below 1 V.
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