Synopsys adds GF eMRAM support to its DesignWare STAR Memory System solution

Synopsys announced that it is set to add support for embedded MRAM designs to its DesignWare STAR Memory System solution. The new solution will offer new eMRAM memory built-in self-test (BIST), repair, and diagnostic capabilities, initially for GlobalFoundries eMRAM on its 22FDX process.

Synopsys DesignWare STAR memory system - MRAM support image

The STAR Memory System's new algorithms target failure mechanisms of embedded MRAM and other types of non-volatile memories during production and in-field test. Support for multiple background patterns and complex addressing modes accelerates automated test equipment (ATE) vector generation, resulting in the highest test coverage for eMRAM, maximized manufacturing yield, and improved system-on-chip (SoC) reliability.

GlobalFoundries and eVaderis are developing an ultra-low power eMRAM based MCU reference design

GlobalFoundries and eVaderis announced that the two companies are co-developing an ultra-low power microcontroller (MCU) reference design using GF’s embedded MRAM on the 22nm FD-SOI (22FDX) platform.

The two companies say that this new reference design will bring together the superior reliability and versatility of GF’s 22FDX eMRAM and eVaderis’ ultra-low power IP. The new platform will support a broad set of applications such as battery-powered IoT products, consumer and industrial microcontrollers, and automotive controllers.

GlobalFoundries: 22nm eMRAM technology is now available, prototyping to start in Q1 2018

In September 2016 Everspin announced that its perpendicular (pMTJ) STT-MRAM memory is going to be deployed by Global Foundries as an embedded 22nm memory (as part of the 22FDX platform). Today GlobalFoundries (GF) announced that eMRAM technology is now available for the 22FDX platform.

GF says that its eMRAM technology is the industry's most advanced embedded memory solution, and it provides high performance and superior reliability for broad applications in consumer and industrial controllers, data centers, Internet of Things, and automotive.

Everspin starts to sample 1Gb pMTJ STT-MRAM chips

Everspin announced that it started sampling 1Gb STT-MRAM chips. Everspin's new chips provide a high-endurance, persistant memory with a DDR4-compatible interface. Everspin sees these chips being used in storage devices to provide protection against power loss without the use of supercapacitors or batteries.

Everspin 128Kb automotive MRAM photo

Everspin's new pMTJ 1Gb chips provide 4 times the capacity of the company's current 256Mb DDR3 chips. The 1 Gb MRAM is produced in 28nm CMOS on 300mm wafers in partnership with GlobalFoundries.

GlobalFoundries and Everspin say that the pMTJ STT-eMRAM features high reliability at high temperatures

GlobalFoundries has plans to deploy Everspin's perpendicular (pMTJ) STT-MRAM as an embedded 22nm memory - as part of GF's 22FDX platform. GlobalFoundries has released a technical paper that details the eMRAM ability to retain data at high temperatures.

Global Foundries 22nm eMRAM slide

The eMRAM can retain data through solder reflow at 260 degrees Celsius, and for more than 10 years at 125 degrees Celsius, plus read/write with outstanding endurance at 125 degrees Celsius. GlobalFoundries says that this will enable eMRAM to be used for general purpose MCUs and automotive SOCs.

Global Foundries to offer Everspin's PMTJ STT-MRAM as an embedded memory solution

Everspin announced that its perpendicular (pMTJ) STT-MRAM memory is going to be deployed by Global Foundries as an embedded 22nm memory. Everspin licensed its technology global foundries which will offer this as part of its 22FDX platform.

Global Foundries 22nm eMRAM slide

The 22FDX platform targets emerging applications such as battery powered consumer devices, IoT, Advanced Driver Assistance Systems (ADAS) and Vision Processing. Customers of Global Foundries will now be able to embed MRAM memory in next-generation SoC and MCU based producers.

Everspin starts shipping perpendicular-MTJ based ST-MRAM chip samples

Everspin announced that it has started shipping samples based on its perpendicular magnetic tunnel junction (pMTJ) ST-MRAM. The first chip is the EMD3D256MB - a 256Mb DDR device. This is Everspin's 3rd-gen MRAM technology.

Everspin pMTJ EMD3D256MB photo

The pMTJ ST-MRAM offers improved performance, higher endurance, lower power, and better scalability compared to previous MRAM and ST-MRAM products. The company (together with GlobalFoundries) is now focused on the production ramp of the 256Mb MRAM and is working on a scaled-down 1Gb version.

Everspin starts sampling 256Mb ST-MRAM chips, plans 1Gb chips by the end of 2016

Everspin announced that it started shipping 256Mb ST-MRAM samples to customers. Everspin also plans to increase the density and sample 1Gb ST-MRAM chips later this year. The new chips demonstrate interface speeds comparable to DRAM, with DDR3 and DDR4 interfaces. Volume production is expected "soon".

Everspin EMD3D256 256Mb ST-MRAM photo

The new EMD3D256 chips are based on Everspin's proprietary magnetic tunnel junction (pMTJ) spin torque technology - and the company expects the new technology to enable it to produce ST-MRAM in lower geometries - and higher densities beyond 1Gb in the future.

Everspin raised $29 million from Global Foundries, Western Digital and others

Everspin Technologies announced that it closed a $29 million funding round, led by Global Foundries and Western Digital Capital. Existing investors (New Venture Partners, Lux Capital, Sigma Partners, Epic Ventures, and Draper Fisher Jurvetson) also joined in the round.

In October 2014 Everspin entered into a partnership with GlobalFoundries to build fully processed 300mm wafers with Everspin's ST-MRAM technology. In October it was announced that GF acquired a stake in Everspin (this is probably before this recent investment) and also acquired ST-MRAM processing equipment (40-nm).