Everspin and Globalfoundries extend their MRAM agreement to 12 nm processes

Everspin Technologies announced that it has amended its STT-MRAM joint development agreement (JDA) with GLOBALFOUNDRIES to set the terms for a future project on an advanced 12 nm FinFET MRAM solution. Everspin agreement included 40 nm, 28 nm and 22 nm processes, and now also include 12 nm.

Everspin 1Gb STT-MRAM chip photo

GF recently announced it has achieved initial production of embedded MRAM (eMRAM) on its 22FDX platform.

GlobalFoundries starts producing eMRAM solutions, first customer tape-outs by the end of 2020

GlobalFoundries announced that it has delivered the first production-ready eMRAM on its 22FDX platform for IoT and automotive applications. The company says that its advanced eMRAM provides a "cost-effective solution for low-power, non-volatile code and data storage applications".

22FDX eMRAM vs 28nm eFLASH Value Proposition (GlobalFoundries)

GF says that it has entered production and is working with several clients with multiple production tape-outs scheduled in 2020. GF's eMRAM is designed as a replacement for high-volume embedded NOR flash (eFLASH). GF says that its eMRAM has passed five rigorous real-world solder reflow tests, and has demonstrated 100,000-cycle endurance and 10-year data retention across the -40°C to 125°C temperature range. The FDX eMRAM solution supports AEC-Q100 quality grade 2 designs, with development in process to support an AEC-Q100 quality grade 1 solution next year.

Synopsys adds GF eMRAM support to its DesignWare STAR Memory System solution

Synopsys announced that it is set to add support for embedded MRAM designs to its DesignWare STAR Memory System solution. The new solution will offer new eMRAM memory built-in self-test (BIST), repair, and diagnostic capabilities, initially for GlobalFoundries eMRAM on its 22FDX process.

Synopsys DesignWare STAR memory system - MRAM support image

The STAR Memory System's new algorithms target failure mechanisms of embedded MRAM and other types of non-volatile memories during production and in-field test. Support for multiple background patterns and complex addressing modes accelerates automated test equipment (ATE) vector generation, resulting in the highest test coverage for eMRAM, maximized manufacturing yield, and improved system-on-chip (SoC) reliability.

GlobalFoundries and eVaderis are developing an ultra-low power eMRAM based MCU reference design

GlobalFoundries and eVaderis announced that the two companies are co-developing an ultra-low power microcontroller (MCU) reference design using GF’s embedded MRAM on the 22nm FD-SOI (22FDX) platform.

The two companies say that this new reference design will bring together the superior reliability and versatility of GF’s 22FDX eMRAM and eVaderis’ ultra-low power IP. The new platform will support a broad set of applications such as battery-powered IoT products, consumer and industrial microcontrollers, and automotive controllers.

GlobalFoundries: 22nm eMRAM technology is now available, prototyping to start in Q1 2018

In September 2016 Everspin announced that its perpendicular (pMTJ) STT-MRAM memory is going to be deployed by Global Foundries as an embedded 22nm memory (as part of the 22FDX platform). Today GlobalFoundries (GF) announced that eMRAM technology is now available for the 22FDX platform.

GF says that its eMRAM technology is the industry's most advanced embedded memory solution, and it provides high performance and superior reliability for broad applications in consumer and industrial controllers, data centers, Internet of Things, and automotive.

Everspin starts to sample 1Gb pMTJ STT-MRAM chips

Everspin announced that it started sampling 1Gb STT-MRAM chips. Everspin's new chips provide a high-endurance, persistant memory with a DDR4-compatible interface. Everspin sees these chips being used in storage devices to provide protection against power loss without the use of supercapacitors or batteries.

Everspin 128Kb automotive MRAM photo

Everspin's new pMTJ 1Gb chips provide 4 times the capacity of the company's current 256Mb DDR3 chips. The 1 Gb MRAM is produced in 28nm CMOS on 300mm wafers in partnership with GlobalFoundries.

GlobalFoundries and Everspin say that the pMTJ STT-eMRAM features high reliability at high temperatures

GlobalFoundries has plans to deploy Everspin's perpendicular (pMTJ) STT-MRAM as an embedded 22nm memory - as part of GF's 22FDX platform. GlobalFoundries has released a technical paper that details the eMRAM ability to retain data at high temperatures.

Global Foundries 22nm eMRAM slide

The eMRAM can retain data through solder reflow at 260 degrees Celsius, and for more than 10 years at 125 degrees Celsius, plus read/write with outstanding endurance at 125 degrees Celsius. GlobalFoundries says that this will enable eMRAM to be used for general purpose MCUs and automotive SOCs.

Global Foundries to offer Everspin's PMTJ STT-MRAM as an embedded memory solution

Everspin announced that its perpendicular (pMTJ) STT-MRAM memory is going to be deployed by Global Foundries as an embedded 22nm memory. Everspin licensed its technology global foundries which will offer this as part of its 22FDX platform.

Global Foundries 22nm eMRAM slide

The 22FDX platform targets emerging applications such as battery powered consumer devices, IoT, Advanced Driver Assistance Systems (ADAS) and Vision Processing. Customers of Global Foundries will now be able to embed MRAM memory in next-generation SoC and MCU based producers.

Everspin starts shipping perpendicular-MTJ based ST-MRAM chip samples

Everspin announced that it has started shipping samples based on its perpendicular magnetic tunnel junction (pMTJ) ST-MRAM. The first chip is the EMD3D256MB - a 256Mb DDR device. This is Everspin's 3rd-gen MRAM technology.

Everspin pMTJ EMD3D256MB photo

The pMTJ ST-MRAM offers improved performance, higher endurance, lower power, and better scalability compared to previous MRAM and ST-MRAM products. The company (together with GlobalFoundries) is now focused on the production ramp of the 256Mb MRAM and is working on a scaled-down 1Gb version.