Multi-layered Co/Ni films are highly desirable materials for effective spin transfer torque

Researchers from the University of Lorraine in France have discovered that multilayers films made of cobalt (Co) and nickel (Ni) hold great promise for STT-MRAM applications.

Multi layered cobalt and nickel films for spintronics

It was already shown before that Co/Ni multilayers have very good properties for spintronics applications, but up until now it wasn't clear if the films have a sufficiently large intrinsic spin polarization, which is necessary to create and maintain spin-polarized currents in spintronic devices. It was now shown that the films have a spin polarization of about 90% - which is similar to the best spintronic materials.

Veeco is encouraged by interest in its STT-MRAM ion beam etch systems

Veeco says that it in the past quarter it has received Ion Beam Etch Solution orders from STT-MRAM developers. Veeco's systems are used for magnetic memory development, and the company is collaborating with a leading semiconductor capital equipment manufacturer in this market.

Veeco Ion Beam Etch system photo

The company "continues to be encouraged by our customers interest" in the STT-MRAM market.

The EU GREAT Project delivered its 2nd tape-out demonstrator

In 2015, the EU launched the GREAT project, with an aim to co-integrate multiple functions like sensors, RF receivers and logic/memory together within CMOS by adapting STT-MTJs to a single baseline technology in the same system on chip. GREAT stands for heteroGeneous integRated magnetic tEchnology using multifonctionnal stAndardized sTack.

GREAT Project 2nd tape-out photo

After the delivery of a first demonstrator in 2017, the project partners now announced the second hybrid CMOS/MSS-MRAM 180nm Tape Out at Israel-based Tower Jazz. The project partners designed four ICs to validate Analog IP blocks and an ultra-low power MCU comprising a hardware security block.

SMART starts shipping its STT-MRAM based nvNITRO accelerator cards

SMART Modular Technologies announces that it has began shipping its new 1Gb nvNITRO Accelerator Card that features MRAM technology. These new nvNITRO cards use Everspin's STT-MRAM chips. SMART says that nvNITRO is ideally suited for the most demanding transaction logging applications and is designed with plug-and-play capability requiring no changes to system hardware, memory reference, bios or file systems.

SMART nvNITRO acceleration card photo

SMART further says that the new cards enable a system application to write or log large amounts of data at the full performance of incoming data and provides extremely low and highly consistent read latencies of under 10µs. Because of the non-volatility of the MRAM chips, these cards do not need any power source such as super capacitors or batteries.

Spin Transfer Technologies announces a breakthrough new STT-MRAM technology

Spin Transfer Technologies (STT) announced that its unique Precessional Spin Current (PSC) structure can increase the spin-torque efficiency of any MRAM device by 40-70 percent, which means dramatically higher data retention while consuming less power.

Following advanced testing, the company says that these higher spin-torque efficiencies translate to retention times lengthening by a factor of over 10,000 while reducing write current.

Everspin starts to produce commercial 40nm 256Mb STT-MRAM chips

Everspin announced that the company recorded revenue for its first 40nm 256Mb STT-MRAM (pMTJ) products in Q4 2017, and is now ramping up volume production. The 256Mb STT-MRAM employs an innovative ST-DDR3 interface, unlocking performance previously unattainable in legacy MRAM components.

These new 40nm 256Mb chips are produced by Global Foundries, Everspin's production partner, which says it is on track to its risk production release of 22FDX eMRAM in 2018.

Crocus Nano Electronics successfully tests its 90 nm pMTJ STT-MRAM tech

Crocus Nano Electronics (CNE) announced successful test results for its 90 nm pMTJ STT-MRAM technology. The company says it has developed unique materials that are able to deliver high data retention, tolerance to external magnetic fields and low switching currents. The company expects to produce its first engineering samples in later in 2018.

Crocus Nano Electronics clean room photo

CNE also reports that it complete the design of its STT-MRAM test chip for further technology improvement in cooperation with eVaderis. Together with eVaderis, CNE created a "universal memory chip" able to serve as a platform for technology development through a wide range of MTJ sizes, currents and voltages ranges.

eVaderis demonstrates an innovative MRAM-based, memory-centric MCU

eVaderis logoeVaderis announced that it has successfully demonstrated a fully functioning design platform through an ultra-low-power microcontroller (MCU) in Beyond Semiconductor’s BA2X product line. eVaderis says that this new MCU is ideally suited for battery-powered applications in IoT and wearable electronics.

The new design uses imec's perpendicular, STT-MRAM technology that enables the new MCU to achieve non-volatile operation with high-speed read/write and low voltage. The MCU includes 3 Mb of on-chip STT-MRAM memory.

Everspin reports its financial results for Q3 2017, focuses on 256Mb STT-MRAM

Everspin reports its financial results for Q3 2017. Revenues reached a record $9 million (up from $7.2 million in Q3 2016 and up only slightly from last quarter), while the net loss grew to $5.4 million (up from $1.4 million in Q3 2016).

Everspin  Q3 2017 earnings slide

At the end of the quarter, Everspin had $17.8 million in cash and equivalents (down from $21.2 million at the end of Q2 2017). Everspin expects revenue in Q4 2017 to be in the range of $9.9 million to $10.3 million.