NVE updates on Anti-Tamper MRAM research

NVE says that they have completed several custom anti-temper MRAM integrated circuit designs. NVE designs conventional semiconductor ICs which they fabricate at outside foundries. Then they add the Spintronic structures, in this case spin-dependent tunnel junction memory cells, in their own factory.

NVE now reveals that they have received a number of the foundry wafers they have designed and they are in the process of adding MRAM to the wafers. The prototypes look promising so far although a fair amount of development remains before production.

Posted: Jan 22,2010 by Ron Mertens