Keysight Technologies announced it will launch STT-MRAM test solution products, developed in collaboration with Tohoku University and the Center for Innovative Integrated Electronic System (CIES).
Keysight says that they aim to release the test solution in early 2016. This will address "various challenges in industry".
e2v announced a new stacked-package 32Mb MRAM device, the EV5A16B that includes two 16Mb MRAM chips (made by Everspin of course) in a 54-pins TSOP. The new device is available in commercial (0 to 70 degrees Celsius) and industrial (-40 to 85 degrees Celsius) temperature ranges.Â
The EV5A16B offers SRAM-compatible, 35-ns read/write timing with data retention and endurance and targeted for microprocessors, DSP, storage systems, instruments, and FPGAs. The EV5A16B is available now.
Toshiba presented a new STT-MRAM 1-Mb test chip that provides speed performance capable of 3.3-ns access to in-cache memory. The newly developed circuit consumes about 80% less power compared to a conventional SRAM as embedded memory - and Toshiba says that this makes it the best power-performing embedded memory.
To make this chip, Toshiba developed a new class of magnetic materials, that enabled them to build this low-power, high-efficiency, high-speed performance in energy-efficient magnetic tunnel junction (MTJ) memory.