July 2010

Researchers from the University of Minnesota are proposing a new composite structure for STT-RAM devices that reduces current densities by up to a factor of 50. According to the researchers, the major issue with STT-RAM is the high power inputs it requires, and the degradation of the storage elements due to the heat created from these high power inputs. The researchers hope that the new structure will pave the way for STT-RAM to become a universal memory.

The composite structure is formed by inserting one or more soft assisting layers between the recording layer and the layer with a permanent polarity. The soft assisting layers have smaller polarities than the recording layer with each assisting layer closer to the recording layer having a stronger polarity than the previous layer.

Spin Transfer Technologies (STT) and Singulus Technologies will collaborate to apply advanced deposition techniques to support commercial development of STT’s novel MRAM memory devices. The companies will use Singulus TIMARIS deposition tool to create magnetic layer stacks with STT’s design specifications. These layer stacks will then be processed at STT contracted facilities into memory arrays for testing, optimization, and eventually, pre-commercial prototyping.

Singulus has already sold several TIMARIS systems for MRAM companies (including Grandis and Crocus). STT is working towards Orthogonal Spin Transfer MRAM or OST-MRAM for short. Back in October 2008 we have interviewed Vincent Chun, the executive in charge at Spin Transfer Technologies.

Mohamad Krounbi, Hitachi GST's general manager and VP of engineering has left Hitachi to join Grandis. Mohamad will be Grandis Senior VP for engineering.

Grandis has been recently awarded a $8.6 million project for STT-RAM chip development from US's DARPA.

Aeroflex Colorado Springs has licensed MRAM technology from Everspin for the development of HiRel nonvolatile memory solutions for aerospace and defense applications. Aeroflex will develop 4Mb and 16Mb MRAM monolithic solutions with guaranteed total ionizing dose and single event effect hardness. Aeroflex envisions HiRel MRAM solutions being used with microprocessors, DSP engines, storage systems, instruments, and reconfigurable FPGAs that require guaranteed total ionizing dose and single event hardness.

Aeroflex’s MRAM roadmap includes a family of -55oC to +125oC, QML products offered in ceramic packages per a Standard Microcircuit Drawing (SMD). As a replacement for 3.3 volt asynchronous SRAM, Aeroflex products will be 8-bit parallel I/O solutions in densities of 4M, 16M, and 64Mbit. All products are designed to operate from a single 3.3 volt supply. With data retention after each write of 20 years and infinite read/write endurance, Aeroflex MRAM products are ideal for working memory applications that require high rates of data overwrites.

Everspin Technologies has named Phillip LoPresti its president and CEO.

“I am looking forward to building on MRAM’s success across multiple markets and leading Everspin through the next stage of our technology development,” said Phillip LoPresti. “Our strong product portfolio and proven track record positions us to expand market share as more customers recognize the value of our products. Everspin is focused on leveraging its MRAM expertise and resources to accelerate the introduction of new products in development based on our next-generation, high density Spin Torque MRAM technology.”

According to a recent EEtimes article, Qualcomm is actively researching MRAM:

"The company also hopes to jumpstart--and generate some new business--for its embryonic efforts in 3-D chips, augmented reality, MRAM, peer-to-peer and other newfangled technologies"