A group led by Professor Hideo Ohno in the Laboratory of Nanoelectronics and Spintronics, at Tohoku University is working to develop new integrated circuits using spintronics. The ICs store data in nonvolatile memory using magnetism, so their standby power can be made zero. This memory utilizes the tunnel magneto-resistance effect.
Osaka's university has a Spintronics research group that is working towards MRAM and STT-RAM using several materials including Graphene. Here's a nice intro video about the group:
MRAM-Info was upgraded today (if anyone is interested, we upgraded to Drupal 6.x from 5.8). Most of the changes are infrastructure related so you won't notice much, but hopefully the site should be faster now, more stable and more secure.
If you do find any bugs, glitches or you have any comments, please let us know!
Renesas has released a presentation about their flash memory products, which also includes one slide about their flash memory roadmap. The roadmap includes Floating Gate HND (Hyper New DINOR), MONOS (metal Oxide Nitride Oxide Silicon) and also MRAM.
They plan to have 100 to 150Mhz MRAM at 90nm at around 2010, and 200Mhz MRAM at 65nm at around 2012. They say MRAM is the next-generation RAM, a breakthrough beyond the limit of flash memory.