I'm happy to announce that we upgraded MRAM-Info's infrastructure from Drupal 4.7.4 to Drupal 5.8. As a reader you will not find many differences, but hopefully it will prove a more stable, safe and quick system.
If you do find any bugs or glitches, please let us know...
Micromem Technologies is pleased to announce the first production level shipments of its patented magnetic sensor which is based on the Hall Effect. The sensors have been produced in traditional package configuration and are being distributed to key clients for field evaluation. This is an integral component of the company's MRAM product line.BAE Systems, under an agreement with Micromem, will co-produce nano-sensor technology that will leverage both companiesâ expertise for use in military, commercial, and homeland security applications. As a foundry and business development partner with Micromem Applied Sensor Technologies, BAE Systemsâ Microelectronics Center in Nashua, New Hampshire, will further develop Micromem designs and manufacturability for advanced magnetic random-access memory (MRAM) products. The goal is to bring the designs to maturity and begin production of gallium arsenide-based nano-sensors that offer features such as very high-speed and low-power capability, radiation-hardness, and overall robustness.
âFoundry facilities are very expensive, and development work on new products is highly capital-intensive,â said Gino Manzo, foundry director at BAE Systems in Nashua. âThis arrangement will advance technology and design maturity for products developed by Micromem by giving both companies the means to produce devices for a wide range of commercial and military uses.â
Micromem Applied Sensor Technologiesâ patented submicron nano-sensor, based on MRAM technology, also can be designed for use in highly accurate magnetometers â instruments used to measure the strength and/or direction of magnetic fields â and for threat-detection solutions for defense and homeland security.