September 2007

Micromem: MRAM wafers are in production

Micromem is pleased to announce that as of September 20 2007 the MRAM wafers are in production in the global Communications Semiconductor, Inc. (GCS) foundry. On September 17, 2007 Strategic Solutions, a design partner of Micromem, released the approved reticle design to the foundry. The reticle design incorporates an extensive matrix of tests to be  performed on the Micromem MRAM bit structure as it is processed through the foundry. By October 29, 2007 the reticle test matrix will yield valuable information of the MRAM  scalability, power consumption, read write speed and cross talk separation. Micromem is also planning additional radiation hardening test that will validate and supplement similar testing previously communicated in our May 24, 2007 press release.

Steven Van Fleet, Micromem's Project Director for this foundry phase stated The entire team, Strategic Solutions, GCS and Micromem are extremely pleased with the foundry plan, schedule and reticle test plan. Gallium Arsenide (GaAs) is proving to have been a wise choice for our targeted applications. GaAs has two distinct advantages over silicon: speed and power. For the same power dissipation, a GaAs circuit is faster, at the same speed, the power in a GaAs circuit is usually lower. This is key to our targeted markets.

Read the full story Posted: Sep 25,2007

Micromem Engages Global Communication Semi as its Foundry in the next step of commercialization

Micromem Technologies is pleased to announce that it has engaged Global Communication Semiconductors, Inc. (GCS), for its next stage of MRAM development. GCS is a California based compound semiconductor pure-play wafer foundry that provides services to the RF wireless communication sector, telecommunication and high-speed networking, optoelectronics and photonics industries. As the premier gallium arsenide foundry in North America, GCS provides foundry services to leading companies in a variety of industries ranging from RF wireless and infrastructure, optical fiber communication, aerospace and defense to medical devices.
 
“We are very pleased to be working with Micromem and taking its technology from the laboratory and moving it towards commercialization and ultimately production”, said Jerry Curtis, President and CEO of GCS.
 
This is a milestone achievement for Micromem as it takes the company’s technology out of the laboratory and shifts it into a manufacturing facility. GCS will design and build a commercial MRAM device utilizing Micromem’s patented technology. Micromem and GCS will work closely with specific potential partners, using their specifications, to design a commercial product that can be brought to market. Micromem anticipates on commencing
fabrication by the end of this year.
Read the full story Posted: Sep 18,2007

NVE Notified of Grant of Magnetothermal MRAM Patent

NVE Corporation announced today that it has been notified by the U.S. Patent and Trademark Office (USPTO) of the expected grant of a patent relating to magnetothermal Magnetoresistive Random Access Memory (MRAM).

NVE has been notified that the patent, titled "Magnetic Memory Layers Thermal Pulse Transitions," will issue today. The patent is number 7,266,013 and covers inventions by Dr. James M. Daughton and Dr. Arthur V. Pohm. The grant is in addition to similarly-titled patent numbers 7,177,178 and 7,023,723.

MRAM is an integrated-circuit memory which is fabricated with nanotechnology and which uses electron spin to store data. MRAM may have the potential to combine many of the best attributes of different types of semiconductor memories.

Magnetothermal MRAM is a next-generation MRAM technology that uses a combination of ultra-fast magnetic fields and heat pulses, both from electrical current, to reduce the energy required to write data and allow reduction of the memory cell size while maintaining thermal stability.

Read the full story Posted: Sep 04,2007