June 2007

E2v is continuing its microprocessor agreement with Freescale Semiconductor and is considering expanding the scope of the deal to include magnetoresistive random access memory (MRAM) products.

The agreement supports E2v's production of extended reliability versions of its microprocessors through additional screening, packaging and qualifications to meet military and aerospace standards.

“We also look forward to expanding our portfolio to include MRAM products. They will ideally complement our microprocessor products for embedded applications in severe environments by combining higher speed and increased reliability compared to other non-volatile memory solutions,” said Thierry Gouvernel, general manager of E2v’s microprocessors and services business.

Freescale Semiconductor has expanded its award-winning MRAM family with the world's first 3-volt 4Mbit extended temperature range (-40 to +105°C) non-volatile RAM (nvRAM) product. This device enables entry into more rugged application environments, such as industrial, military and aerospace and automotive designs.

Freescale also has broadened its commercial MRAM line with a 1Mbit device, offering system designers a density option that addresses the sweet spot of the mainstream embedded market. In addition, Freescale plans to expand its MRAM product family to include a total of nine commercial, industrial and extended temperature products during the third quarter of 2007.

NVE has been notified that the patent, titled `Thermomagnetically Assisted Spin-Momentum-Transfer Switching Memory' will be issued today. The patent is number 7,230,844 and is the grant of a patent under the application published by the USPTO as number 2006-0077707.

Magnetothermal MRAM uses a combination of ultra-fast magnetic fields and heat pulses, both from electrical current. Spin-momentum transfer is a method of changing the spin of storage electrons directly with an electrical current rather than an induced magnetic field. Both technologies may have the potential to reduce the energy required to write data and allow reduction of the memory cell size while maintaining thermal stability.

Singulus has established a fully-owned subsidiary for the growth market magnetic storage, MRAM and semi-conductor technology. The new 100 % subsidiary of the Singulus Technologies AG is called 'Singulus Nano Deposition Technologies GmbH' and located in Kahl. Managing Directors are the present division manager, Dr. Wolfram Maass, as well as the CEO of the parent company, Stefan A. Baustert.

All of SINGULUS' activities for this particularly sophisticated target market have already been combined under the name of 'Nano Deposition Technologies'. Following the break-through of the newly offered machine concept, the next logical strategic step was the focusing. With the Singulus Nano Deposition Technologies GmbH Singulus intends to benefit even more from the growing volumes in these specialized markets.