April 2006

This report covers the markets for FRAM, MRAM, ovonic memory, nanotube memory, molecular memory, polymer memory, holographic memory, MEMS-based memory systems and other memory technologies likely to be commercialized in the next decade.

The report identifies and quantifies the opportunities presented by these technologies and the timeframes in which they will emerge. The current state of the market for each of these technologies is identified – are they in R&D, sampling, pilot production, full-scale production? – as are the markets for these products are to be found. The report discusses which kinds of end product would use each of these technologies and in what context – do they replace DRAM, SRAM, Flash, disk storage or some combination of these? Will they create entirely new products?

NVE Corporation said today that it has been notified by the U.S. Patent and Trademark Office of the expected grant of a patent relating to magnetothermal Magnetoresistive Random Access Memory (MRAM).

NVE has been notified that the patent, titled "Magnetic Memory Layers Thermal Pulse Transitions," will be issued today. The grant is in addition to patent number 6,963,098 titled "Thermally Operated Switch Control Memory Cell," which was granted in November 2005, as well as other NVE patents relating to MRAM and magnetothermal MRAM.