Patents

MRAM patents news

Magsil finally out of stealh-mode, plans to make 1Mb MRAM chips soon

MagSil has been working on MRAM since 2004, but we had very little information about the company till now (except for a PR from 2009 in which they said they'll soon reach full-scale commercialization). Today they have finally revealed more information. They are developing MRAM based on Magnetic Recording (iMR) cell architecture, based on a traditional magnetic tunnel junction (MTJ) scheme.

The company hopes to start making a standalone 1Mb MRAM device (based on 130- and 90-nm processes) "pretty soon". They also have plans for a 64Mb chip.

The technology was originally developed by MIT and exclusively licensed to Magsil. They have filed several suits against companies over hard disk drive components using tunneling magnetoresistive (TMR) technology and have reached settlements with Western Digital, Seagate, SAW Magnetics and Headway Technologies. Litigation is still ongoing with Hitachi and Shenzen ExcelStor technology.

08/20/2010

NVE granted a new MRAM patent

NVE Corporation was granted a new MRAM patent number 7,715,228, titled Cross-Point Magnetoresistive Memory.

The invention was made with U.S. Government support under a Missile Defense Agency contract and assigned to NVE. The U.S. Government has certain rights in the invention.

05/11/2010

Spingate: a new startup to develop Perpendicular-MRAM

Spingate is a new US-based fabless company focusing on development, licensing and manufacturing of solid state memory, specifically, perpendicular MRAM.

We have talked to Dr. Alex Shukh, Spingate's co-founder, CTO and CEO. Alex explains that they have decided to focus on perpendicular MRAM because according to their estimates it does not suffer from several fundamental issues of its longitudinal (in-plane) analogue.

11/05/2009

Crocus Granted Two New MRAM Patents

Crocus Technology announced two new patent grants by the US Patent and Trademark Office and the French Institut National de la Propriete Industrielle (INPI).

The new patents cover use in specialized memory chips known as Content Addressable Memories (CAM), opening the way to denser, faster and less power-hungry CAM, as well as innovative developments in the physics, materials, and manufacturing of MRAM chips with high data stability. Commercialization of these technologies holds the promise of low cost, advanced technology MRAM to be used in applications ranging from mobile phones and disk drives to personal computers and network routers.

03/29/2009

NVE receives an MRAM patent - "Enclosure tamper detection and protection"

NVE Corporation was granted a patent today relating to tamper detection and protection using magnetoresistive sensing memory storage. The patent is number 7,468,664 and titled "Enclosure tamper detection and protection."

Magnetoresistive memory, commonly known as MRAM, is an integrated-circuit memory which uses electron spin to store data.

The grant brings NVE's U.S. patent total to 50.

12/23/2008

MRAM Related Invention Looking For Funding Or Buyout

We've been approached by "VCPartners" who have an MRAM related invention and are looking to sell it or get funding. The invention is titled "HIGH SPEED MAGNETIC RANDOM ACCESS ELECTRONICALLY CONTROLLED MEMORY" and here's their abstract:

10/02/2008