Researchers from Japan's Tohoku University developed a 128 Mb STT-MRAM device that features a write speed of 14 nm, the world's fastest STT-MRAM chip at a density over 100 Mb.

Tohoku 128 MB STT-MRAM 14 ns write speed image

To achieve this high speed, the researchers developed MTJs that are integrated with CMOS, which also significantly reduces the power-consumption of the memory device.

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