October 2022

Researchers from Samsung will soon present at IEDM 2022 a new research paper that will discuss the company's latest achievements in scaling down its MRAM technology to the company's 14nm FinFET logic process.

The Samsung researchers produced a stand-alone memory with a write energy requirement of 25 pJ per bit and active power requirements of 14 mW for reading and 27 mW for writing at a 54Mbyte per second data rate. The cycling  is 10^14 cycles and when scaled to a 16Mbit device, a chip would occupy 30 square millimeters.

Everspin Technologies announced that it has signed a contract to provide MRAM technology, design, and back end of line manufacturing services to QuickLogic Corporation. At the first stage, Everspin will develop and demonstrate Strategic Radiation Hardened (SRH), high reliability Field Programmable Gate Array (FPGA) technology to support identified and future Department of Defense (DoD) strategic and space system requirements.

Everspin says that the initial contract is potentially valued at $2.8 million, with subsequent options bringing the total to approximately $8.7 million. The project is sponsored by DoD’s Trusted and Assured Microelectronics (T&AM) Program.