March 2016

Researchers at Tohoku University developed a new scheme of spin-orbit-torque (SOT) induced magnetization switching. In the new scheme the magnetization directed collinear with the current.

The researcher fabricated three-terminal devices with the new structure (using a Ta/CoFeB/MgO-based magnetic tunnel junction) and successfully demonstrated the switching operation. The research report a "reasonably small" required current density to induce the magnetization switching and a "reasonably large" resistance difference between 0 and 1 states. They say that this is a promising candidate for future MRAM devices.

Researchers from Eindhoven's University of Technology (TU/e) managed to use a bending current to change an MRAM "bit". The result is a much more efficient memory write cycle that is also faster than conventional MRAM methods.

The idea is to use a current pulse under the MRAM cell bit which bends the electrons at the correct spin upwards towards MRAM bit. This was achieved before, but using a magnetic field. In this new method, the researchers applied an anti-ferromagnetic material to the top of the MRAM bits, which enabled the requisite magnetic field to be frozen.

Everspin announced a new MRAM chip, the MR10Q010 - a 1Mb QSPI MRAM. Everspin says that at 104 Mhz, this is features the fastest non-volatile write speeds in the industry. The MR10Q010 is now available in both SOIC and BGA packages.

Everspin says that the new chip is suitable for applications such as enterprise RAID controllers - that can use the MR10Q010 as a journal memory that records continuously updated system metadata.

Researcher from Cornell's NanoScale Science and Technology Facility (CNF), in collaboration with Oxford Instruments Plasma Technology (OIPT) developed a new etching process targeted specifically for MRAM device fabrication.

The etching of the MTJ stack is a challenging step in MRAM fabrication, because the magnetic materials do not easily react to etching agents, and so manufactures usually use purely physical ion milling processes - which results in low etch rates, low selectivity and damage to the device structure itself.