TSMC to start eMRAM production in 2018

Jun 08, 2017

According to reports, Taiwan Semiconductor Manufacturing Company (TSMC) is aiming to start producing embedded MRAM chips in 2018 using a 22 nm process. This will be initial "risk production" to gauge market reception.

TSMC production facility photo

TSMC also aims to start embedded RRAM chip production in 2019.

New MRAM book: Next Generation Spin Torque Memories

This book discusses spin transfer torque (STT) based devices, circuits and memories. The book details the basic concepts and device physics, advanced STT applications and the outlook for the technology.

Other topics featured in the book include the architectures, performance parameters, fabrication, and the prospects of STT based devices - in addition to presenting a non-volatile computing architecture composed of STT based magneto-resistive and all-spin logic devices.

Samsung reaffirms 2018 target for STT-MRAM mass production

May 26, 2017

During Samsung Electronic's Foundry Forum, the Korean chip maker reaffirmed its goal to start producing STT-MRAM chips in 2018. In fact Samsung now says that it will mass produce these chips next year, while last year it said that 2018 will only see limited production while real mass production will only begin in 2019.

Samsung announced it will produce the 2018 MRAM chips will be produced using 8-nano low power plus (8LMPP) semiconductor foundry process. Samsung sees MRAM produced by 4LPP by 2020.

Everspin reports its financial results for Q1 2017

May 16, 2017

MRAM chip maker Everspin reported its financial results for Q1 2017. Revenues reached $7.9 million (up from $6.2 million in Q1 2016) while the net loss was $6.1 million (up from a loss of $4.5 million in Q1 2016). Everspin says that is received strong bookings for its first-generation toggle MRAM products during the quarter, while design activity for both toggle and STT-MRAM chips continue to gain traction.

Everspin 128Kb automotive MRAM photo

Everpin says it was selected by a major auto maker to include its Gen-1 MRAM chips in an emergency call system and a high-end navigation platform.

New MRAM book: In Search of the Next Memory: Inside the Circuitry from the Oldest to the Emerging Non-Volatile Memories

This book aims to provide an introduction to promising emerging memories under development. The book's target audience is the chip designer, and it offers expanded, up-to-date coverage of emerging memories circuit design.

The book covers four main next-gen technologies: MRAM, RRAM, FeRAM and PCRAM and explores the array organization, sensing and writing circuitry, programming algorithms and error correction techniques.

Domain wall displacement switching may lead to efficient spintronics memory devices

Apr 17, 2017

Researchers from Helmholtz-Zentrum Berlin developed a robust and reliable magnetization switching process - that could one day lead to highly efficient spintronics memory devices.

Magnetic switching by domain wall displacement (HZB photo)

The researchers used domain wall displacement to switch between two possible vortex states - without any applied field. The basic idea is to use tiny tings which have slightly displaced holes.