NTU and TSMC researchers develop a new SOT-MRAM structure with high spin-orbital Hall conductivity

Researchers from National Taiwan University in collaboration with TSMC developed a new SOT-MRAM device structure, that features sizable orbital currents. This research promises a pathway for enhancing SOT-MRAM performance by harnessing both the conventional spin currents and the emergent orbital currents.

NTU TSMC PtCr Alloys SOT-MRAMThe new device is based on 3d light transition metals (such as V and Cr) that are incorporated into the classical spin Hall metal Pt. The Pt-Cr alloy enhances the charge-to-spin conversion efficiency which can realize high spin-orbital Hall conductivity, beyond the conventional spin Hall limit.

Read the full story Posted: Feb 27,2022

Researchers developed an ultra low power BiSb-based SOT MRAM device

Researchers from the Tokyo Institute of Technology developed an ultrahigh-efficiency SOT magnetization switching in fully sputtered BiSb–(Co/Pt) multilayers with large perpendicular magnetic anisotropy (PMA).

Scheme of ultra low power BiSb SOT-MRAM device (Tokyo IT)

The new device offers a large spin Hall angle and high electrical conductivity, thus satisfying all the three requirements for SOT-MRAM implementation. The researchers managed to achieve robust SOT magnetization at a low current density despite the large PMA field.

Read the full story Posted: Feb 23,2022

Hprobe announces a large magnetic tester order from a Korean semiconductor maker

Hprobe, a developer of testing equipment for magnetic devices, announced a significant order from a tier-1 semiconductor manufacturer in Korea for a wafer-level magnetic tester.

Hprobe IBEX WAT H3DM Light photo

Hprobe's IBEX platform is compatible with 200mm and 300mm automated wafer probers, and is dedicated to testing MRAM magnetic tunnel junctions, bit cells based on STT-MRAM, SOT-MRAM, and Voltage Controlled (VC-MRAM) technologies.

Read the full story Posted: Feb 04,2022

Samsung researchers are first to demonstrate MRAM-based in-memory computing

Researchers from Samsung's Advanced Institute of Technology (SAIT), have demonstrated what they say is the world’s first in-memory computing based on MRAM, targeting next-generation AI chips.

The researchers explain that In-Memory computing is a new paradigm that seeks to perform both data storage and data computing in a memory network. In such a computing system, a large amount of data, stored in the memory network, can be executed in a highly parallel manner. Power consumption in such systems is substantially reduced.

Read the full story Posted: Jan 13,2022

Researchers use MIFL to increase the magnetoresistance of pMTJs

Researchers from the University of Arizona developed a new pMTJ structure that exhibits high magnetoresistance, strong retention and is likely to achieve fast switching times as well.

pMTJ with multi-interface free layer (Arizona University)

The new structure uses a multi-interface free layer (MIFL) which incorporate multiple materials with different properties. The researchers used a ferromagnetic CoFeB layer with nonmagnetic Mo or MgO layers. The magnetoresistance can be controlled by changing the thickness of the CoFeB layer. The researchers managed to demonstrate a magnetoresistance of over 200%.

Read the full story Posted: Dec 31,2021

Researchers from Tohoku University developed the world's smallest STT-MRAM MTJ

Researchers from Tohoku University managed to fabricate the world's smallest STT-MRAM MTJ, at 2 nm. In addition, the researchers demonstrated fast switching (3.5 ns) in sub-five-nm STT-MRAM MTJs.

10-nm MTJ TEM photo, Tohoku University

The new MTJ were developed using a new multilayered ferromagnetic structure that can engineer characteristic relaxation time, which governs the magnetization dynamics in the ns regime.

Read the full story Posted: Dec 14,2021

Hprobe launches a next-generation MRAM wafer sort magnetic test head

Hprobe announced a new magnetic test head for MRAM Wafer Sort. The new module, the H3DM-XL, is at the heart of the latest addition to Hprobe’s IBEX line, the IBEX-WS.

Hprobe MRAM Wafer-Sort Magnetic Test Head (IBEX-WS)

The IBEX-WS test equipment integrates 3D magnetic field capabilities, while increasing field area and uniformity for wafer probing large MRAM arrays. It also features a unique patented robotized 3D Field Calibration Unit (FCU) for high-speed field mapping and monitoring.

Read the full story Posted: Dec 01,2021

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Read the full story Posted: Nov 14,2021