Everspin reported its financial results for Q3 2018

Everspin announced its financial results for Q3 2018 - revenues increased 28% year-over-year to reach $11.5 million, and the company's net loss was $ 5.6 million.

Everspin says it is pleased with the progress it made in the quarter in both its Toggle MRAM and STT-MRAM product lines. The company remains on track with its planned 1Gb STT-MRAM chip sample in December 2018.

Everspin and SilTerra to build a Toggle MRAM production line in Malaysia

Everspin announced that it has entered into a multi-year partnership with Malaysia-based SilTerra and to establish a Toggle MRAM production center in Malaysia. Bosch Sensortec, a licensee of Everspin's TMR sensor IP is also a part of this agreement.

Everspin MR4A16B

SilTerra and Everspin's new Malaysian production center will start initial production in 2020. Everspin says that it is seeing growing demand for its Toggle MRAM products in the industrial, computing, medical, and transportation markets. Everspin will continue to produce Toggle MRAM and TMR sensor products at its own manufacturing line in Chandler, AZ, USA.

Synopsys adds GF eMRAM support to its DesignWare STAR Memory System solution

Synopsys announced that it is set to add support for embedded MRAM designs to its DesignWare STAR Memory System solution. The new solution will offer new eMRAM memory built-in self-test (BIST), repair, and diagnostic capabilities, initially for GlobalFoundries eMRAM on its 22FDX process.

Synopsys DesignWare STAR memory system - MRAM support image

The STAR Memory System's new algorithms target failure mechanisms of embedded MRAM and other types of non-volatile memories during production and in-field test. Support for multiple background patterns and complex addressing modes accelerates automated test equipment (ATE) vector generation, resulting in the highest test coverage for eMRAM, maximized manufacturing yield, and improved system-on-chip (SoC) reliability.

Intel is developing embedded MRAM technologies

Intel says it will present a new paper detailing its MRAM research at the International Electron Devices Meeting (IEDM) in early December 2018. This is the first time we hear of any MRAM R&D at Intel which is great news, even if it just a research paper.

Intel MTJ array 22nm (Oct 2018)

Intel has apparently successfully integrated embedded MRAM into the company's 22nm FinFET CMOS technology on full 300mm wafers. The magnetic tunnel junction-based memory cells are built from dual MgO magnetic tunnel junctions (MTJs) separated by a CoFeB-based layer in a 1 transistor-1 resistor (1T-1R) configuration in the interconnect stack. Intel has manufactured a 7.2Mbit array with reported data retention figures in excess of 10 years and write endurance of greater than 10^6 cycles.

Coughlin: MRAM and STT-MRAM revenues will reach $3.3 billion by 2028

Tom Coughlin posted an interesting overview of the 2018 MRAM Developer day, which is well worth a read. Besides the conference report, Coughlin also updates on its market estimates - the market for MRAM and STT-MRAM memory solutions will experience fast growth - growing from $36 million in 2017 to about $3.3 billion in 2028. This growth will be at the expense of SRAM, NOR flash and some DRAM.

Memory revenue projection (2016-2028, Coughlin)

The demand for MRAM memory will result in an increased demand for MRAM production equipment, of course. MRAM equipment revenues will reach $792 million by 2028, according to Coughlin Associates.