Everspin reports excellent results for Q1 2020

Everspin Technologies announced its Q1 2020 financial results, - with revenues of $10.1 million, up from $9.7 million in Q4 2019 and $10 million in Q1 2019. Net loss was $1.7 million, down from $3.1 million in Q4 2019. Everspin expects the growth to continue in Q2 2020 as demand from data center applications continues to be positive.

Everspin 1Gb STT-MRAM chip photo

At the end of the quarter, Everspin had $14 million in cash and equivalents.

MRAM equipment maker Leuven Instruments raises $14 million

China-based semiconductor etching equipment maker Leuven Instruments raised $14 million in its series B financing round from several VCs. The funds will be used to increase the company's team and accelerate its R&D and market expansion.

Leuven Instruments LMEC-200 MRAM Etching System photo

For the MRAM industry, Leuven Instruments offers the LMEC-200 Magnetic-layer Etching Cluster system that integrates ICP etching, IBE etching, in-situ protection and more. In April 2020 the company closed its Series B funding round, raising $14.1 million from several investment firms.

Everspin and Globalfoundries extend their MRAM agreement to 12 nm processes

Everspin Technologies announced that it has amended its STT-MRAM joint development agreement (JDA) with GLOBALFOUNDRIES to set the terms for a future project on an advanced 12 nm FinFET MRAM solution. Everspin agreement included 40 nm, 28 nm and 22 nm processes, and now also include 12 nm.

Everspin 1Gb STT-MRAM chip photo

GF recently announced it has achieved initial production of embedded MRAM (eMRAM) on its 22FDX platform.

GlobalFoundries starts producing eMRAM solutions, first customer tape-outs by the end of 2020

GlobalFoundries announced that it has delivered the first production-ready eMRAM on its 22FDX platform for IoT and automotive applications. The company says that its advanced eMRAM provides a "cost-effective solution for low-power, non-volatile code and data storage applications".

22FDX eMRAM vs 28nm eFLASH Value Proposition (GlobalFoundries)

GF says that it has entered production and is working with several clients with multiple production tape-outs scheduled in 2020. GF's eMRAM is designed as a replacement for high-volume embedded NOR flash (eFLASH). GF says that its eMRAM has passed five rigorous real-world solder reflow tests, and has demonstrated 100,000-cycle endurance and 10-year data retention across the -40°C to 125°C temperature range. The FDX eMRAM solution supports AEC-Q100 quality grade 2 designs, with development in process to support an AEC-Q100 quality grade 1 solution next year.

Researchers show how antiferromagnetic STT-MRAM technology can enable higher-density and lower energy memory

Researchers from Northwestern University suggest building STT-MRAM devices from antiferromagnetic materials - as opposed to the currently-used ferromagnetic ones. The researchers say that these materials will enable higher-density devices that feature high speed writing with low currents.

Antiferromagnetic materials are magnetically ordered at the microscopic scale, but not at the macroscopic scale. This means that there is no magnetic force between adjacent bits in MRAM cells built from these materials - which means you can pack them very close together.

Researchers demonstrate that chalcogenide materials can be highly suitable for SOT-MRAM

Researchers from National Taiwan University demonstrate that chalcogenide material BiTe with non-epitaxial structure can give rise to a giant spin Hall ratio and SOT efficiency (~ 200%) without obvious evidence of topologically-protected surface state (TSS).

BiTe material system for SOT-MRAM schema (NUS)

The researchers explain that a clear thickness-dependent increase of the SOT efficiency indicates that the origin of this effect is from the bulk spin-orbit interaction of such materials system. Efficient current-induced switching through SOT is also demonstrated with a low zero-thermal critical switching current density (~ 6×105 A/cm2).